非晶硅和晶体硅中 855 MeV 电子的多重散射：模拟与实验

IF 1.4 3区物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms Pub Date : 2024-08-26 DOI:10.1016/j.nimb.2024.165515

Germán Rojas-Lorenzo , Jesús Rubayo-Soneira , Maykel Márquez-Mijares , Andrei V. Korol , Andrey V. Solov’yov

{"title":"非晶硅和晶体硅中 855 MeV 电子的多重散射：模拟与实验","authors":"Germán Rojas-Lorenzo , Jesús Rubayo-Soneira , Maykel Márquez-Mijares , Andrei V. Korol , Andrey V. Solov’yov","doi":"10.1016/j.nimb.2024.165515","DOIUrl":null,"url":null,"abstract":"<div><p>The angular distribution function of multiple scattering experienced by <span><math><mrow><mn>855</mn><mspace></mspace><mtext>MeV</mtext></mrow></math></span> electrons passing through an amorphous silicon plate and an oriented silicon crystal has been studied by means of relativistic molecular dynamics simulations using two types of the potentials that describe electron–atom interaction. The differences in the angular distributions of the beam particles in both media are analyzed. The results obtained are compared to the experimental data and to the results of Monte Carlo simulations.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"556 ","pages":"Article 165515"},"PeriodicalIF":1.4000,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multiple scattering of 855 MeV electrons in amorphous and crystalline silicon: Simulations versus experiment\",\"authors\":\"Germán Rojas-Lorenzo , Jesús Rubayo-Soneira , Maykel Márquez-Mijares , Andrei V. Korol , Andrey V. Solov’yov\",\"doi\":\"10.1016/j.nimb.2024.165515\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The angular distribution function of multiple scattering experienced by <span><math><mrow><mn>855</mn><mspace></mspace><mtext>MeV</mtext></mrow></math></span> electrons passing through an amorphous silicon plate and an oriented silicon crystal has been studied by means of relativistic molecular dynamics simulations using two types of the potentials that describe electron–atom interaction. The differences in the angular distributions of the beam particles in both media are analyzed. The results obtained are compared to the experimental data and to the results of Monte Carlo simulations.</p></div>\",\"PeriodicalId\":19380,\"journal\":{\"name\":\"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms\",\"volume\":\"556 \",\"pages\":\"Article 165515\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-08-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0168583X24002854\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"INSTRUMENTS & INSTRUMENTATION\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0168583X24002854","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}

引用次数: 0

摘要

利用描述电子原子相互作用的两种电势，通过相对论分子动力学模拟研究了穿过非晶硅板和取向硅晶体的 855MeV 电子所经历的多重散射的角分布函数。分析了电子束粒子在两种介质中角度分布的差异。研究结果与实验数据和蒙特卡罗模拟结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Multiple scattering of 855 MeV electrons in amorphous and crystalline silicon: Simulations versus experiment

The angular distribution function of multiple scattering experienced by $855 MeV$ electrons passing through an amorphous silicon plate and an oriented silicon crystal has been studied by means of relativistic molecular dynamics simulations using two types of the potentials that describe electron–atom interaction. The differences in the angular distributions of the beam particles in both media are analyzed. The results obtained are compared to the experimental data and to the results of Monte Carlo simulations.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 物理-核科学技术

CiteScore

2.80

自引率

7.70%

发文量

231

审稿时长

1.9 months

期刊介绍： Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.