Minghui Xu, Tao Liu, Hailian Li, Yong Liu, Pengshun Shan, Ruowei Wang, Weijin Kong, Minghao Zhang, Shuangqing Fan and Jie Su
{"title":"基于快速重离子辐照 BaTiO3 薄膜的神经形态计算突触记忆晶体。","authors":"Minghui Xu, Tao Liu, Hailian Li, Yong Liu, Pengshun Shan, Ruowei Wang, Weijin Kong, Minghao Zhang, Shuangqing Fan and Jie Su","doi":"10.1039/D4MH00716F","DOIUrl":null,"url":null,"abstract":"<p >Swift heavy ion (SHI) irradiation is an effective method for modulating the properties of thin oxide films by introducing defects, strains, and structural transformations. Here, we applied 516 MeV Xe<small><sup>31+</sup></small> irradiation to BaTiO<small><sub>3</sub></small> (BTO) thin films grown on Nb:SrTiO<small><sub>3</sub></small> substrates to induce the generation of tracks and nanohillocks. Memristors with BTO films irradiated at a fluence of 5 × 10<small><sup>10</sup></small> ions cm<small><sup>−2</sup></small> displayed excellent retention and endurance characteristics. Moreover, the memristors exhibited highly stable synaptic plasticity functions such as excitatory/inhibitory post-synaptic currents (E/IPSC) and paired-pulse facilitation/depression (PPF/D). The memristors achieved a discrimination accuracy of 92.5% on given handwritten digit data by an artificial neural network with supervised learning. These results verify that the judicious application of SHI irradiation on thin oxide films is a viable strategy for exploring neuromorphic computation.</p>","PeriodicalId":87,"journal":{"name":"Materials Horizons","volume":" 21","pages":" 5429-5437"},"PeriodicalIF":10.7000,"publicationDate":"2024-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synaptic memristors based on BaTiO3 thin films irradiated by swift heavy ions for neuromorphic computing†\",\"authors\":\"Minghui Xu, Tao Liu, Hailian Li, Yong Liu, Pengshun Shan, Ruowei Wang, Weijin Kong, Minghao Zhang, Shuangqing Fan and Jie Su\",\"doi\":\"10.1039/D4MH00716F\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Swift heavy ion (SHI) irradiation is an effective method for modulating the properties of thin oxide films by introducing defects, strains, and structural transformations. Here, we applied 516 MeV Xe<small><sup>31+</sup></small> irradiation to BaTiO<small><sub>3</sub></small> (BTO) thin films grown on Nb:SrTiO<small><sub>3</sub></small> substrates to induce the generation of tracks and nanohillocks. Memristors with BTO films irradiated at a fluence of 5 × 10<small><sup>10</sup></small> ions cm<small><sup>−2</sup></small> displayed excellent retention and endurance characteristics. Moreover, the memristors exhibited highly stable synaptic plasticity functions such as excitatory/inhibitory post-synaptic currents (E/IPSC) and paired-pulse facilitation/depression (PPF/D). The memristors achieved a discrimination accuracy of 92.5% on given handwritten digit data by an artificial neural network with supervised learning. These results verify that the judicious application of SHI irradiation on thin oxide films is a viable strategy for exploring neuromorphic computation.</p>\",\"PeriodicalId\":87,\"journal\":{\"name\":\"Materials Horizons\",\"volume\":\" 21\",\"pages\":\" 5429-5437\"},\"PeriodicalIF\":10.7000,\"publicationDate\":\"2024-08-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Horizons\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2024/mh/d4mh00716f\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Horizons","FirstCategoryId":"88","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2024/mh/d4mh00716f","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Synaptic memristors based on BaTiO3 thin films irradiated by swift heavy ions for neuromorphic computing†
Swift heavy ion (SHI) irradiation is an effective method for modulating the properties of thin oxide films by introducing defects, strains, and structural transformations. Here, we applied 516 MeV Xe31+ irradiation to BaTiO3 (BTO) thin films grown on Nb:SrTiO3 substrates to induce the generation of tracks and nanohillocks. Memristors with BTO films irradiated at a fluence of 5 × 1010 ions cm−2 displayed excellent retention and endurance characteristics. Moreover, the memristors exhibited highly stable synaptic plasticity functions such as excitatory/inhibitory post-synaptic currents (E/IPSC) and paired-pulse facilitation/depression (PPF/D). The memristors achieved a discrimination accuracy of 92.5% on given handwritten digit data by an artificial neural network with supervised learning. These results verify that the judicious application of SHI irradiation on thin oxide films is a viable strategy for exploring neuromorphic computation.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
