用于热电能量采集的带自举时钟助推器的 40 mV 冷启动电路

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Haizhun Wang , Yinshui Xia , Xiudeng Wang, Zhidong Chen
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引用次数: 0

摘要

本文提出了一种用于热电能量采集的带自举时钟增压器的冷启动电路。本文分析了交叉耦合电荷泵(CCCP)提高时钟摆幅和降低输入电压之间的关系。在现有单次启动机制的基础上,提出了一种用于提升时钟振幅的串并联自举时钟升压器(SP-BCB),以降低冷启动电压。此外,还采用了动态阈值 MOS(DTMOS)技术来动态改变 MOS 晶体管的阈值电压,以实现更好的传导和漏电流抑制。在 0.18μm CMOS 工艺中对整个电路进行了仿真。仿真结果表明,使用 DTMOS 技术和提高时钟摆幅有助于降低输入电压。基于 SP-BCB 的 CCCP 可在 100 m s 内将 500 MΩ 负载的输入电压从 40 mV 提升到 668 mV,从而满足了单次启动机制的要求,实现了热电能量采集 (TEH) 的 40 mV 集成冷启动。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 40 mV cold-start circuit with bootstrap clock booster for thermoelectric energy harvesting

In this paper, a cold-start circuit with bootstrap clock booster for thermoelectric energy harvesting is proposed. The relationship between enhancing the clock swing amplitude and lowering the input voltage for a cross-coupled charge pump (CCCP) is analyzed. Based on the existing one-shot start-up mechanism, a series-parallel bootstrap clock booster (SP-BCB) for boosting the clock amplitude is proposed to lower the cold start voltage. Besides, a dynamic threshold MOS (DTMOS) technique for dynamically changing the threshold voltage of MOS transistors is used to achieve better conduction and leakage current suppression. The complete circuit is simulated in a 0.18-μm CMOS process. The simulated results demonstrate that using DTMOS technique and enhancing the clock swing amplitude can contribute to lowering the input voltage. The SP-BCB-based CCCP can boost the input voltage from 40 mV to 668 mV for a 500 MΩ load in 100 m s, which meets the requirement for one-shot start-up mechanism, realizing 40-mV integrated cold start for thermoelectric energy harvesting (TEH).

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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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