Ahlem Baazaoui , Sabeur Msolli , Joel Alexis , Olivier Dalverny , Heung Soo Kim
{"title":"探索金属化基底上金刚石芯片的连接技术:微米级和纳米级机械测试方法","authors":"Ahlem Baazaoui , Sabeur Msolli , Joel Alexis , Olivier Dalverny , Heung Soo Kim","doi":"10.1016/j.nxmate.2024.100349","DOIUrl":null,"url":null,"abstract":"<div><p>This paper aims to comprehensively evaluate the shear strength of various junctions between diamond chips and double copper bonded ceramic substrates. The study involves several stages, beginning with the deposition of <em>Ti/Ni/Ag</em> metallization system on diamond chips using a chemical vapor deposition (CVD) process. These metallization systems are selected to determine their suitability as ohmic contacts on diamond. In parallel, <em>Ni/Au</em> and <em>Ni/Ag</em> layers are electroplated onto the thick copper metallization of the ceramic substrate. Following these depositions, junctions are created for both <em>Cu/Cu</em> and <em>C/Cu</em> assemblies using different techniques: reflow process for <em>AuGe</em> solder joints, reflow-diffusion process for Ag-In joints, and a thermomechanical process for <em>Ag</em> nanoparticle joints. To assess the effectiveness of these techniques, the shear strength of the junctions is measured using a micro-shear test, which is analogous to a classical micro-scratching test. Additionally, the mechanical behaviors of the layers adjacent to the assemblies are analyzed through nano-indentation tests. Finally, the fracture surfaces are examined using scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX) spectrometry to identify the microstructure and damage modes. The work described in the paper exhibits several innovative aspects. It introduces the novel combination of <em>Ti/Ni/Ag</em> metallization system on diamond chips, evaluated for its suitability as ohmic contacts, potentially leading to improved electrical and thermal performance in diamond substrate applications. The study employs diverse junction creation techniques, such as reflow for <em>AuGe</em> solder joints, reflow-diffusion for <em>Ag-In</em> joints, and a thermomechanical process for <em>Ag</em> nanoparticle joints, allowing for a thorough comparison and identification of the most effective method for different scenarios. We have also introduced an integrated testing methodology, which combines micro-shear tests and nano-indentation tests and provides a robust framework for assessing both the shear strength and mechanical properties of the junctions and adjacent layers, enhancing the reliability and depth of the evaluation. 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The study involves several stages, beginning with the deposition of <em>Ti/Ni/Ag</em> metallization system on diamond chips using a chemical vapor deposition (CVD) process. These metallization systems are selected to determine their suitability as ohmic contacts on diamond. In parallel, <em>Ni/Au</em> and <em>Ni/Ag</em> layers are electroplated onto the thick copper metallization of the ceramic substrate. Following these depositions, junctions are created for both <em>Cu/Cu</em> and <em>C/Cu</em> assemblies using different techniques: reflow process for <em>AuGe</em> solder joints, reflow-diffusion process for Ag-In joints, and a thermomechanical process for <em>Ag</em> nanoparticle joints. To assess the effectiveness of these techniques, the shear strength of the junctions is measured using a micro-shear test, which is analogous to a classical micro-scratching test. Additionally, the mechanical behaviors of the layers adjacent to the assemblies are analyzed through nano-indentation tests. Finally, the fracture surfaces are examined using scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX) spectrometry to identify the microstructure and damage modes. The work described in the paper exhibits several innovative aspects. It introduces the novel combination of <em>Ti/Ni/Ag</em> metallization system on diamond chips, evaluated for its suitability as ohmic contacts, potentially leading to improved electrical and thermal performance in diamond substrate applications. The study employs diverse junction creation techniques, such as reflow for <em>AuGe</em> solder joints, reflow-diffusion for <em>Ag-In</em> joints, and a thermomechanical process for <em>Ag</em> nanoparticle joints, allowing for a thorough comparison and identification of the most effective method for different scenarios. 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引用次数: 0
摘要
本文旨在全面评估金刚石芯片和双铜键合陶瓷基底之间各种连接的剪切强度。研究分为几个阶段,首先是采用化学气相沉积 (CVD) 工艺在金刚石芯片上沉积钛/镍/银金属化系统。选择这些金属化系统是为了确定它们是否适合作为金刚石上的欧姆触点。同时,镍/金和镍/银层被电镀到陶瓷基底的厚铜金属化层上。沉积完成后,使用不同的技术为铜/铜和铜/铜组件创建结点:金锗焊点使用回流工艺,银铟焊点使用回流扩散工艺,纳米银焊点使用热机械工艺。为了评估这些技术的有效性,我们使用微剪切测试测量了接合处的剪切强度,该测试类似于经典的微刮擦测试。此外,还通过纳米压痕测试分析了组件邻近层的机械行为。最后,利用扫描电子显微镜 (SEM) 和能量色散 X 射线 (EDX) 光谱法对断裂表面进行检测,以确定微观结构和损坏模式。论文中描述的工作具有多个创新方面。它在金刚石芯片上引入了新颖的钛/镍/银金属化系统组合,并评估了其作为欧姆触点的适用性,从而有可能改善金刚石基底应用中的电气和热性能。这项研究采用了不同的结创建技术,例如用于 AuGe 焊点的回流焊技术、用于 Ag-In 焊点的回流扩散技术,以及用于 Ag 纳米颗粒焊点的热机械工艺,从而对不同情况下最有效的方法进行了全面的比较和鉴定。我们还引入了一种综合测试方法,该方法结合了微剪切测试和纳米压痕测试,为评估连接和相邻层的剪切强度和机械性能提供了一个稳健的框架,从而提高了评估的可靠性和深度。这项研究特别关注适用于金刚石的金属化系统和结点,而金刚石以其卓越的热性能和电性能而著称,因此这项研究与先进的电子和热管理应用高度相关。
Exploring joining techniques for diamond chips on metallized substrates: Micro- and nano-scale mechanical testing approach
This paper aims to comprehensively evaluate the shear strength of various junctions between diamond chips and double copper bonded ceramic substrates. The study involves several stages, beginning with the deposition of Ti/Ni/Ag metallization system on diamond chips using a chemical vapor deposition (CVD) process. These metallization systems are selected to determine their suitability as ohmic contacts on diamond. In parallel, Ni/Au and Ni/Ag layers are electroplated onto the thick copper metallization of the ceramic substrate. Following these depositions, junctions are created for both Cu/Cu and C/Cu assemblies using different techniques: reflow process for AuGe solder joints, reflow-diffusion process for Ag-In joints, and a thermomechanical process for Ag nanoparticle joints. To assess the effectiveness of these techniques, the shear strength of the junctions is measured using a micro-shear test, which is analogous to a classical micro-scratching test. Additionally, the mechanical behaviors of the layers adjacent to the assemblies are analyzed through nano-indentation tests. Finally, the fracture surfaces are examined using scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX) spectrometry to identify the microstructure and damage modes. The work described in the paper exhibits several innovative aspects. It introduces the novel combination of Ti/Ni/Ag metallization system on diamond chips, evaluated for its suitability as ohmic contacts, potentially leading to improved electrical and thermal performance in diamond substrate applications. The study employs diverse junction creation techniques, such as reflow for AuGe solder joints, reflow-diffusion for Ag-In joints, and a thermomechanical process for Ag nanoparticle joints, allowing for a thorough comparison and identification of the most effective method for different scenarios. We have also introduced an integrated testing methodology, which combines micro-shear tests and nano-indentation tests and provides a robust framework for assessing both the shear strength and mechanical properties of the junctions and adjacent layers, enhancing the reliability and depth of the evaluation. The specific focus on metallization system and junctions suitable for diamond, known for its exceptional thermal and electrical properties, positions this work as highly relevant for advanced electronic and thermal management applications.