Chunxue Hao, Jun Peng, Robert Zierold, Robert H. Blick
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Atomic Layer Deposition Films for Resistive Random-Access Memories (Adv. Mater. Technol. 16/2024)
Atomic Layer Deposition Films
Resistive random-access memory (RRAM) is a promising technology because of its ease of operation, high speed, affordability, and stability, particularly at nanoscale device sizes. In article number 2301762, Robert Zierold an o-workers show that atomic layer deposition is ideal for RRAM fabrication due to its ability to control oxygen vacancies and enables multiple-layer stacking, with potential applications in information storage and neural networks.
期刊介绍:
Advanced Materials Technologies Advanced Materials Technologies is the new home for all technology-related materials applications research, with particular focus on advanced device design, fabrication and integration, as well as new technologies based on novel materials. It bridges the gap between fundamental laboratory research and industry.