乌普萨拉大学飞行时间中能离子散射系统的皮秒脉冲轻重千伏安离子束

IF 1.4 3区 物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION
Eleni Ntemou , Radek Holeňák , Dan Wessman , Daniel Primetzhofer
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引用次数: 0

摘要

乌普萨拉大学的 ToF-MEIS 系统采用了 16 MHz 静电波束斩波器,作为 4 MHz 正弦扫描的补充,提高了分辨率,而不会产生漂移管束效应。该系统以 H2+、He+ 和 Ne+ 离子的透射和背散射几何形状为基准。据估计,60 keV He+ 的真实脉冲持续时间为 34 ps,而直接光束撞击探测器后,测得的 He 离子脉冲宽度为 295 ps,Ne 离子脉冲宽度为 481 ps。在反向散射几何中,离子撞击目标产生的测量脉冲持续时间为:H 离子 459 ns,He 离子 550 ps,Ne 离子 810 ps,能量分辨率测量值分别为 2.4 keV(100 keV H)、0.9 keV(60 keV He)和 2.4 keV(160 keV Ne)。讨论内容包括对可实现能量分辨率的杂散影响,以及如何获得离子脉冲真实持续时间的估计值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Picosecond pulsed beams of light and heavy keV ions at the Time-of-Flight Medium energy ion scattering system at Uppsala University

A 16 MHz electrostatic beam chopper is implemented at the Uppsala University ToF-MEIS system to complement the 4 MHz sinusoidal scanning, refining the resolution without drift-tube bunching. The system is benchmarked with H2+, He+, and Ne+ ions in transmission and backscattering geometries. The estimated true pulse duration for 60 keV He+ is 34 ps while the direct beam impinging on the detector resulted in measured pulse widths of 295 ps for He ions and 481 ps for Ne ions. In backscattering geometries, ions impinging on the target yield measured pulse durations of 459 ns for H ions, 550 ps for He ions and 810 ps for Ne ions and lead to energy resolution measurements of 2.4 keV (100 keV H), 0.9 keV (60 keV He), and 2.4 keV (160 keV Ne). Discussions cover straggling effects on achievable energy resolution and how to obtain estimates of the true duration of the ion pulse.

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来源期刊
CiteScore
2.80
自引率
7.70%
发文量
231
审稿时长
1.9 months
期刊介绍: Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.
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