{"title":"基于三维微纳集成碳纳米管结构的波长红外光响应。","authors":"Yasameen Al-Mafrachi, Sandeep Yadav, Sascha Preu, Jörg J Schneider, Oktay Yilmazoglu","doi":"10.3762/bjnano.15.84","DOIUrl":null,"url":null,"abstract":"<p><p>A new 3D micro-nano integrated M-shaped carbon nanotube (CNT) architecture was designed and fabricated. It is based on vertically aligned carbon nanotube arrays composed of low-density, mainly double-walled CNTs with simple lateral external contacts to the surroundings. Standard optical lithography techniques were used to locally tailor the width of the vertical block structure. The complete sensor system, based on a broadband blackbody absorber region and a high-resistance thermistor region, can be fabricated in a single chemical vapor deposition process step. The thermistor resistance is mainly determined by the high junction resistances of the adjacent aligned CNTs. This configuration also provides low lateral thermal conductivity and a high temperature coefficient of resistance (TCR). These properties are advantageous for new bolometric sensors with high voltage responsivity and broadband absorption from the infrared (IR) to the terahertz spectrum. Preliminary performance evaluations have shown current and voltage responsivities of 2 mA/W and 30 V/W, respectively, in response to IR (980 nm) absorption for a 20 × 20 μm<sup>2</sup> device. The device exhibits an exceptionally fast response time of ≈0.15 ms, coupled with a TCR of -0.91 %/K. These attributes underscore its high operating speed and responsivity, respectively. In particular, the device maintains excellent thermal stability and reliable operation at elevated temperatures in excess of 200 °C, extending its potential utility in challenging environmental conditions. This design allows for further device miniaturization using optical lithography techniques. Its unique properties for mass production through large-scale integration techniques make it important for real-time broadband imaging systems.</p>","PeriodicalId":8802,"journal":{"name":"Beilstein Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11331537/pdf/","citationCount":"0","resultStr":"{\"title\":\"Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture.\",\"authors\":\"Yasameen Al-Mafrachi, Sandeep Yadav, Sascha Preu, Jörg J Schneider, Oktay Yilmazoglu\",\"doi\":\"10.3762/bjnano.15.84\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>A new 3D micro-nano integrated M-shaped carbon nanotube (CNT) architecture was designed and fabricated. It is based on vertically aligned carbon nanotube arrays composed of low-density, mainly double-walled CNTs with simple lateral external contacts to the surroundings. Standard optical lithography techniques were used to locally tailor the width of the vertical block structure. The complete sensor system, based on a broadband blackbody absorber region and a high-resistance thermistor region, can be fabricated in a single chemical vapor deposition process step. The thermistor resistance is mainly determined by the high junction resistances of the adjacent aligned CNTs. This configuration also provides low lateral thermal conductivity and a high temperature coefficient of resistance (TCR). These properties are advantageous for new bolometric sensors with high voltage responsivity and broadband absorption from the infrared (IR) to the terahertz spectrum. Preliminary performance evaluations have shown current and voltage responsivities of 2 mA/W and 30 V/W, respectively, in response to IR (980 nm) absorption for a 20 × 20 μm<sup>2</sup> device. The device exhibits an exceptionally fast response time of ≈0.15 ms, coupled with a TCR of -0.91 %/K. These attributes underscore its high operating speed and responsivity, respectively. In particular, the device maintains excellent thermal stability and reliable operation at elevated temperatures in excess of 200 °C, extending its potential utility in challenging environmental conditions. This design allows for further device miniaturization using optical lithography techniques. Its unique properties for mass production through large-scale integration techniques make it important for real-time broadband imaging systems.</p>\",\"PeriodicalId\":8802,\"journal\":{\"name\":\"Beilstein Journal of Nanotechnology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2024-08-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11331537/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Beilstein Journal of Nanotechnology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.3762/bjnano.15.84\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2024/1/1 0:00:00\",\"PubModel\":\"eCollection\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Beilstein Journal of Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3762/bjnano.15.84","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/1/1 0:00:00","PubModel":"eCollection","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture.
A new 3D micro-nano integrated M-shaped carbon nanotube (CNT) architecture was designed and fabricated. It is based on vertically aligned carbon nanotube arrays composed of low-density, mainly double-walled CNTs with simple lateral external contacts to the surroundings. Standard optical lithography techniques were used to locally tailor the width of the vertical block structure. The complete sensor system, based on a broadband blackbody absorber region and a high-resistance thermistor region, can be fabricated in a single chemical vapor deposition process step. The thermistor resistance is mainly determined by the high junction resistances of the adjacent aligned CNTs. This configuration also provides low lateral thermal conductivity and a high temperature coefficient of resistance (TCR). These properties are advantageous for new bolometric sensors with high voltage responsivity and broadband absorption from the infrared (IR) to the terahertz spectrum. Preliminary performance evaluations have shown current and voltage responsivities of 2 mA/W and 30 V/W, respectively, in response to IR (980 nm) absorption for a 20 × 20 μm2 device. The device exhibits an exceptionally fast response time of ≈0.15 ms, coupled with a TCR of -0.91 %/K. These attributes underscore its high operating speed and responsivity, respectively. In particular, the device maintains excellent thermal stability and reliable operation at elevated temperatures in excess of 200 °C, extending its potential utility in challenging environmental conditions. This design allows for further device miniaturization using optical lithography techniques. Its unique properties for mass production through large-scale integration techniques make it important for real-time broadband imaging systems.
期刊介绍:
The Beilstein Journal of Nanotechnology is an international, peer-reviewed, Open Access journal. It provides a unique platform for rapid publication without any charges (free for author and reader) – Platinum Open Access. The content is freely accessible 365 days a year to any user worldwide. Articles are available online immediately upon publication and are publicly archived in all major repositories. In addition, it provides a platform for publishing thematic issues (theme-based collections of articles) on topical issues in nanoscience and nanotechnology.
The journal is published and completely funded by the Beilstein-Institut, a non-profit foundation located in Frankfurt am Main, Germany. The editor-in-chief is Professor Thomas Schimmel – Karlsruhe Institute of Technology. He is supported by more than 20 associate editors who are responsible for a particular subject area within the scope of the journal.