二氧化硅支撑(Ga,Al)2O3 混合氧化物丙烷脱氢催化剂中 H2 分解位点的性质和稳定性与丙烯选择性之间的关系

IF 1.5 4区 化学 Q3 CHEMISTRY, MULTIDISCIPLINARY
Pedro Castro-Fernández, Alexander I. Serykh, Melis Yarar, Deni Mance, Paula M. Abdala, Christophe Copéret, Alexey Fedorov, Christoph R. Müller
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引用次数: 0

摘要

标称原子镓-铝(Ga,Al)2O3(x:y)固溶纳米粒子的胶体溶液:铝 (x:y) 比例分别为 1 : 6、1 :3, 3 :和 1:0 的二氧化硅支撑催化剂制备丙烷脱氢 (PDH) 催化剂。对未支撑催化剂和二氧化硅支撑催化剂进行比较后发现,在二氧化硅上的分散提高了所有催化剂的镓归一化 PDH 速率,尽管 (Ga,Al)2O3(1:6)/SiO2 的丙烯选择性明显较低。傅立叶变换红外光谱(FTIR)可以对比煅烧和 H2 处理过的(Ga,Al)2O3(x:y)/SiO2 中的 H2 离解位点,表明在煅烧过的(Ga,Al)2O3(1:6)/SiO2 中,Ga3+ 表面位点与第二配位层中的铝(主要)和镓原子(Ga(Al/Ga) 位点)发生了转变,而在 H2 处理过的材料中则主要是 Ga(Ga/Si) 表面位点。由此产生的位点与二氧化硅上的无定形镓位点具有类似的非选择性。在 PDH 反应过程中产生的 H2 会引起类似于 H2 预处理在 (Ga,Al)2O3(1:6)/SiO2 中的转变,迅速导致选择性明显降低。(Ga,Al)2O3(1:3)/SiO2中稳定而具有选择性的Ga(Al/Ga)表面位点在H2解离时会产生一个约为1990 cm-1的Ga-H带。1990 cm-1 的 Ga-H 带,而在其他 Ga :而在其他镓:铝比例中观察到的选择性较低的表面位点则会在约 2040 和 2060 cm-1 处产生 Ga-H 带。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

The Relation between Nature and Stability of H2-Dissociating Sites and Propene Selectivity in Silica-Supported (Ga,Al)2O3 Mixed Oxide Propane Dehydrogenation Catalysts

The Relation between Nature and Stability of H2-Dissociating Sites and Propene Selectivity in Silica-Supported (Ga,Al)2O3 Mixed Oxide Propane Dehydrogenation Catalysts

Colloidal solutions of gallia-alumina (Ga,Al)2O3(x:y) solid-solution nanoparticles with nominal atomic Ga : Al (x:y) ratios of 1 : 6, 1 : 3, 3 : 1, and 1:0 were used to prepare silica-supported catalysts for propane dehydrogenation (PDH). A comparison of the unsupported and silica-supported catalysts reveals that the dispersion on silica increases the Ga-normalized PDH rates for all catalysts, albeit with a notably lower propene selectivity for (Ga,Al)2O3(1:6)/SiO2. Fourier transform infrared (FTIR) spectroscopy allows contrasting the H2 dissociation sites in the calcined and H2-treated (Ga,Al)2O3(x:y)/SiO2, indicating a transformation of Ga3+ surface sites with Al (mainly) and Ga atoms in the second coordination sphere (Ga(Al/Ga) sites) in the calcined (Ga,Al)2O3(1:6)/SiO2 to predominantly Ga(Ga/Si) surface sites in the H2-treated material. The resulting sites are similarly unselective as in amorphous gallia on silica. H2 produced during the PDH reaction can cause a similar transformation as H2 pretreatment in (Ga,Al)2O3(1:6)/SiO2, rapidly resulting in a notably lowered selectivity. The stable and selective Ga(Al/Ga) surface sites in (Ga,Al)2O3(1:3)/SiO2 yield a Ga−H band at ca. 1990 cm−1 under H2 dissociation conditions while the less selective surface sites, observed for the other Ga : Al ratios, give Ga−H bands at ca. 2040 and 2060 cm−1.

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来源期刊
Helvetica Chimica Acta
Helvetica Chimica Acta 化学-化学综合
CiteScore
3.00
自引率
0.00%
发文量
60
审稿时长
2.3 months
期刊介绍: Helvetica Chimica Acta, founded by the Swiss Chemical Society in 1917, is a monthly multidisciplinary journal dedicated to the dissemination of knowledge in all disciplines of chemistry (organic, inorganic, physical, technical, theoretical and analytical chemistry) as well as research at the interface with other sciences, where molecular aspects are key to the findings. Helvetica Chimica Acta is committed to the publication of original, high quality papers at the frontier of scientific research. All contributions will be peer reviewed with the highest possible standards and published within 3 months of receipt, with no restriction on the length of the papers and in full color.
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