定制用于猩红显示屏的 A-IGZO 薄膜晶体管的阈下波动：转换机制对 Peald 沉积序列的影响（小方法 8/2024）

IF 9.1 2区材料科学 Q1 CHEMISTRY, PHYSICAL

Small Methods Pub Date : 2024-08-16 DOI:10.1002/smtd.202470043

Seong Hun Yoon, Jae Hun Cho, Iaan Cho, Min Jae Kim, Jae Seok Hur, Seon Woong Bang, Heung Jo Lee, Jong Uk Bae, Jiyoung Kim, Bonggeun Shong, Jae Kyeong Jeong

{"title":"定制用于猩红显示屏的 A-IGZO 薄膜晶体管的阈下波动：转换机制对 Peald 沉积序列的影响（小方法 8/2024）","authors":"Seong Hun Yoon, Jae Hun Cho, Iaan Cho, Min Jae Kim, Jae Seok Hur, Seon Woong Bang, Heung Jo Lee, Jong Uk Bae, Jiyoung Kim, Bonggeun Shong, Jae Kyeong Jeong","doi":"10.1002/smtd.202470043","DOIUrl":null,"url":null,"abstract":"<p><b>Inside Front Cover</b></p><p>In article number 2301185, Shong, Jeong, and co-workers explore controlling the gate swing in amorphous IGZO thin-film transistors using a plasma-enhanced atomic layer deposition. The conversion mechanism in the deposition sequence of In-Zn-Ga allows the controllable gate swing value. The observed behavior is attributed to different surface reactivity. It can be applied into organic light-emitting diode tablets and notebooks.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":229,"journal":{"name":"Small Methods","volume":"8 8","pages":""},"PeriodicalIF":9.1000,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/smtd.202470043","citationCount":"0","resultStr":"{\"title\":\"Tailoring Subthreshold Swing in A-IGZO Thin-Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences (Small Methods 8/2024)\",\"authors\":\"Seong Hun Yoon, Jae Hun Cho, Iaan Cho, Min Jae Kim, Jae Seok Hur, Seon Woong Bang, Heung Jo Lee, Jong Uk Bae, Jiyoung Kim, Bonggeun Shong, Jae Kyeong Jeong\",\"doi\":\"10.1002/smtd.202470043\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><b>Inside Front Cover</b></p><p>In article number 2301185, Shong, Jeong, and co-workers explore controlling the gate swing in amorphous IGZO thin-film transistors using a plasma-enhanced atomic layer deposition. The conversion mechanism in the deposition sequence of In-Zn-Ga allows the controllable gate swing value. The observed behavior is attributed to different surface reactivity. It can be applied into organic light-emitting diode tablets and notebooks.\\n\\n <figure>\\n <div><picture>\\n <source></source></picture><p></p>\\n </div>\\n </figure></p>\",\"PeriodicalId\":229,\"journal\":{\"name\":\"Small Methods\",\"volume\":\"8 8\",\"pages\":\"\"},\"PeriodicalIF\":9.1000,\"publicationDate\":\"2024-08-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/smtd.202470043\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Small Methods\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/smtd.202470043\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Small Methods","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/smtd.202470043","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

摘要

封面内页在编号为 2301185 的文章中，Shong、Jeong 及其合作者探讨了如何利用等离子体增强原子层沉积来控制非晶 IGZO 薄膜晶体管的栅极摆幅。In-Zn-Ga 沉积序列中的转换机制实现了栅极摆幅值的可控。观察到的行为归因于不同的表面反应性。它可应用于有机发光二极管平板电脑和笔记本电脑。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Tailoring Subthreshold Swing in A-IGZO Thin-Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences (Small Methods 8/2024)

查看原文本刊更多论文

Tailoring Subthreshold Swing in A-IGZO Thin-Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences (Small Methods 8/2024)

Inside Front Cover

In article number 2301185, Shong, Jeong, and co-workers explore controlling the gate swing in amorphous IGZO thin-film transistors using a plasma-enhanced atomic layer deposition. The conversion mechanism in the deposition sequence of In-Zn-Ga allows the controllable gate swing value. The observed behavior is attributed to different surface reactivity. It can be applied into organic light-emitting diode tablets and notebooks.

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来源期刊

Small Methods Materials Science-General Materials Science

CiteScore

17.40

自引率

1.60%

发文量

347

期刊介绍： Small Methods is a multidisciplinary journal that publishes groundbreaking research on methods relevant to nano- and microscale research. It welcomes contributions from the fields of materials science, biomedical science, chemistry, and physics, showcasing the latest advancements in experimental techniques. With a notable 2022 Impact Factor of 12.4 (Journal Citation Reports, Clarivate Analytics, 2023), Small Methods is recognized for its significant impact on the scientific community. The online ISSN for Small Methods is 2366-9608.