{"title":"使用碳量子点装饰的新型 Z 型 BiVO4/MOF-808/CN 光催化剂在可见光下增强二苯并噻吩的氧化脱硫:机理、性能和稳定性","authors":"Manh B. Nguyen , Huan V. Doan","doi":"10.1016/j.jtice.2024.105691","DOIUrl":null,"url":null,"abstract":"<div><h3>Background</h3><p>Photocatalytic oxidative desulfurization technology enabling the facile oxidation of these compounds to sulfones, deep desulfurization, operation at ambient temperature and pressure, and minimal energy consumption.</p></div><div><h3>Methods</h3><p>This study introduces a novel photocatalyst, BiVO<sub>4</sub>/MOF-808/CN integrated with carbon quantum dots (BMC-CQD), designed for the oxidative desulfurization of dibenzothiophene (DBT) under visible light irradiation.</p></div><div><h3>Significant findings</h3><p>Novel approach was undertaken by integrating the photocatalyst BiVO<sub>4</sub>, g-C<sub>3</sub>N<sub>4</sub> with MOF-808 and carbon quantum dots to enhance the interaction between semiconductors. This innovative photocatalyst addresses several limitations associated with MOF-808, including enhanced visible light absorption (2.21–2.60 eV), reduced electron-hole recombination, rapid charge transfer, high surface area (1370 m<sup>2</sup>/g), large pore volume (0.908 cm<sup>3</sup>/g). Under optimized conditions of a catalyst dosage of 1.5 g/L, a reaction temperature of 50 °C, an O/S molar ratio of 6, and an initial DBT concentration of 500 mg/L, the 10 %BMC-CQD photocatalyst achieved an impressive 99.5 % DBT removal efficiency in just 25 min. Incorporating CQD into the BMC framework significantly amplifies the removal rate of the DBT by 10.69, 2.13 and 8.7 times compared to the BiVO<sub>4</sub>, MOF-808 and CN, respectively. The radical trapping experiments have shown that the <sup>•</sup>OH and <sup>•</sup>O<sub>2</sub><sup>−</sup> radicals play a key role in the DBT removal process.</p></div>","PeriodicalId":381,"journal":{"name":"Journal of the Taiwan Institute of Chemical Engineers","volume":"164 ","pages":"Article 105691"},"PeriodicalIF":5.5000,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced oxidative desulfurization of dibenzothiophene under visible light using carbon quantum dot-decorated novel Z-scheme BiVO4/MOF-808/CN photocatalyst: Mechanism, performance and stability\",\"authors\":\"Manh B. Nguyen , Huan V. Doan\",\"doi\":\"10.1016/j.jtice.2024.105691\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><h3>Background</h3><p>Photocatalytic oxidative desulfurization technology enabling the facile oxidation of these compounds to sulfones, deep desulfurization, operation at ambient temperature and pressure, and minimal energy consumption.</p></div><div><h3>Methods</h3><p>This study introduces a novel photocatalyst, BiVO<sub>4</sub>/MOF-808/CN integrated with carbon quantum dots (BMC-CQD), designed for the oxidative desulfurization of dibenzothiophene (DBT) under visible light irradiation.</p></div><div><h3>Significant findings</h3><p>Novel approach was undertaken by integrating the photocatalyst BiVO<sub>4</sub>, g-C<sub>3</sub>N<sub>4</sub> with MOF-808 and carbon quantum dots to enhance the interaction between semiconductors. This innovative photocatalyst addresses several limitations associated with MOF-808, including enhanced visible light absorption (2.21–2.60 eV), reduced electron-hole recombination, rapid charge transfer, high surface area (1370 m<sup>2</sup>/g), large pore volume (0.908 cm<sup>3</sup>/g). Under optimized conditions of a catalyst dosage of 1.5 g/L, a reaction temperature of 50 °C, an O/S molar ratio of 6, and an initial DBT concentration of 500 mg/L, the 10 %BMC-CQD photocatalyst achieved an impressive 99.5 % DBT removal efficiency in just 25 min. Incorporating CQD into the BMC framework significantly amplifies the removal rate of the DBT by 10.69, 2.13 and 8.7 times compared to the BiVO<sub>4</sub>, MOF-808 and CN, respectively. The radical trapping experiments have shown that the <sup>•</sup>OH and <sup>•</sup>O<sub>2</sub><sup>−</sup> radicals play a key role in the DBT removal process.</p></div>\",\"PeriodicalId\":381,\"journal\":{\"name\":\"Journal of the Taiwan Institute of Chemical Engineers\",\"volume\":\"164 \",\"pages\":\"Article 105691\"},\"PeriodicalIF\":5.5000,\"publicationDate\":\"2024-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Taiwan Institute of Chemical Engineers\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1876107024003493\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, CHEMICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Taiwan Institute of Chemical Engineers","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1876107024003493","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, CHEMICAL","Score":null,"Total":0}
Enhanced oxidative desulfurization of dibenzothiophene under visible light using carbon quantum dot-decorated novel Z-scheme BiVO4/MOF-808/CN photocatalyst: Mechanism, performance and stability
Background
Photocatalytic oxidative desulfurization technology enabling the facile oxidation of these compounds to sulfones, deep desulfurization, operation at ambient temperature and pressure, and minimal energy consumption.
Methods
This study introduces a novel photocatalyst, BiVO4/MOF-808/CN integrated with carbon quantum dots (BMC-CQD), designed for the oxidative desulfurization of dibenzothiophene (DBT) under visible light irradiation.
Significant findings
Novel approach was undertaken by integrating the photocatalyst BiVO4, g-C3N4 with MOF-808 and carbon quantum dots to enhance the interaction between semiconductors. This innovative photocatalyst addresses several limitations associated with MOF-808, including enhanced visible light absorption (2.21–2.60 eV), reduced electron-hole recombination, rapid charge transfer, high surface area (1370 m2/g), large pore volume (0.908 cm3/g). Under optimized conditions of a catalyst dosage of 1.5 g/L, a reaction temperature of 50 °C, an O/S molar ratio of 6, and an initial DBT concentration of 500 mg/L, the 10 %BMC-CQD photocatalyst achieved an impressive 99.5 % DBT removal efficiency in just 25 min. Incorporating CQD into the BMC framework significantly amplifies the removal rate of the DBT by 10.69, 2.13 and 8.7 times compared to the BiVO4, MOF-808 and CN, respectively. The radical trapping experiments have shown that the •OH and •O2− radicals play a key role in the DBT removal process.
期刊介绍:
Journal of the Taiwan Institute of Chemical Engineers (formerly known as Journal of the Chinese Institute of Chemical Engineers) publishes original works, from fundamental principles to practical applications, in the broad field of chemical engineering with special focus on three aspects: Chemical and Biomolecular Science and Technology, Energy and Environmental Science and Technology, and Materials Science and Technology. Authors should choose for their manuscript an appropriate aspect section and a few related classifications when submitting to the journal online.