增强 SiC@MoO3 纳米复合材料对电磁波吸收的缺陷诱导偶极极化策略

IF 26.6 1区材料科学 Q1 Engineering

Nano-Micro Letters Pub Date : 2024-08-16 DOI:10.1007/s40820-024-01478-2

Ting Wang, Wenxin Zhao, Yukun Miao, Anguo Cui, Chuanhui Gao, Chang Wang, Liying Yuan, Zhongning Tian, Alan Meng, Zhenjiang Li, Meng Zhang

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引用次数: 0

摘要

过渡金属氧化物半导体（TMOs）中的缺陷工程正引起人们的极大兴趣，因为它可以通过有意引入缺陷来调节材料的电子结构，从而增强导电性。然而，要全面了解微结构与电磁波吸收能力之间的关系仍然遥不可及，这对过渡金属氧化物吸波材料的发展构成了巨大挑战。目前的研究描述了在碳化硅纳米线上沉积氧化钼层的过程，该过程是通过电沉积后高温煅烧实现的。随后，研究人员有意识地在 MoO3 层中制造氧空位，从而精确调整电磁特性，提高材料的微波吸收性能。值得注意的是，在匹配厚度为 1.27 mm 时，SiC@MO-t4 样品的最小反射损耗为 - 50.49 dB。此外，厚度为 2.81 毫米的 SiC@MO-t6 样品显示出 8.72 千兆赫的有效吸收带宽，全面覆盖了整个 Ku 波段。这些结果不仅凸显了缺陷工程在细微调整电磁特性方面的关键作用，也为应用缺陷工程方法拓宽电磁波吸收频谱提供了宝贵的启示。通过原位刻蚀 SiC@MoO3 纳米复合材料，制备了具有不同氧空位浓度的 SiC@MO-t 样品。氧空位的存在在调整带隙和局部电子分布方面起着至关重要的作用，这反过来又增强了导电性损耗和诱导极化损耗能力。这一发现揭示了一种通过缺陷工程改善电磁波吸收特性的新策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Enhancing Defect-Induced Dipole Polarization Strategy of SiC@MoO3 Nanocomposite Towards Electromagnetic Wave Absorption

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Enhancing Defect-Induced Dipole Polarization Strategy of SiC@MoO3 Nanocomposite Towards Electromagnetic Wave Absorption

Highlights

Oxygen-vacancy-rich SiC@MoO₃ nanocomposite with strong reflection loss (− 50.49 dB at 1.27 mm thickness) and broadband absorption band (8.72 GHz at 2.68 mm thickness) were constructed via in situ etching strategy.
The presence of oxygen vacancy leads to an increased conductive loss and defect-induced dipole polarization, which plays significant role in attenuating the incident electromagnetic wave.

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来源期刊

Nano-Micro Letters NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

32.60

自引率

4.90%

发文量

981

审稿时长

1.1 months

期刊介绍： Nano-Micro Letters is a peer-reviewed, international, interdisciplinary, and open-access journal published under the SpringerOpen brand. Nano-Micro Letters focuses on the science, experiments, engineering, technologies, and applications of nano- or microscale structures and systems in various fields such as physics, chemistry, biology, material science, and pharmacy.It also explores the expanding interfaces between these fields. Nano-Micro Letters particularly emphasizes the bottom-up approach in the length scale from nano to micro. This approach is crucial for achieving industrial applications in nanotechnology, as it involves the assembly, modification, and control of nanostructures on a microscale.