Kanishk Singh;Chao-Hung Chen;Li-Chia Tai;Wei-Chen Huang;Tung-Ming Pan
{"title":"利用基于柔性氧化铁扩展栅极场效应晶体管的生物传感器进行无标记表皮生长因子受体传感","authors":"Kanishk Singh;Chao-Hung Chen;Li-Chia Tai;Wei-Chen Huang;Tung-Ming Pan","doi":"10.1109/LSENS.2024.3436106","DOIUrl":null,"url":null,"abstract":"In this research work, we present a flexible iridium oxide (IrO\n<italic><sub>x</sub></i>\n) extended-gate field-effect transistor (EGFET) biosensor for label-free detection of the epidermal growth factor receptor (EGFR) biomarker. IrO\n<italic><sub>x</sub></i>\n was employed as the sensing membrane material due to its excellent electrochemical properties, high conductivity, stability, biocompatibility, and ability to facilitate redox reactions. The IrO\n<italic><sub>x</sub></i>\n film was deposited on a flexible polyimide (PI) substrate through a sol–gel process and characterized using atomic force microscopy and X-ray photoelectron spectroscopy. As a pH sensor, the IrO\n<italic><sub>x</sub></i>\n EGFET exhibited a super-Nernstian sensitivity of 68.54 mV/pH with high linearity, a low hysteresis of ∼ 6 mV, and a drift rate of 0.50 mV/h at pH 7 over 12 h. For EGFR detection, the IrO\n<italic><sub>x</sub></i>\n surface was functionalized with 3-aminopropyltriethoxysilane and glutaraldehyde to immobilize anti-EGFR antibodies. The EGFR sensor demonstrated a wide linear detection range from 1 to 1000 ng/mL with a sensitivity of 11.78 mV/log(ng/mL) and a linearity of 99.8%, making it suitable for clinical EGFR monitoring in cancer patients. The flexible IrO\n<italic><sub>x</sub></i>\n EGFET shows promise for reliable label-free detection of EGFR.","PeriodicalId":13014,"journal":{"name":"IEEE Sensors Letters","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Label-Free EGFR Sensing by Using a Flexible IrOx Extended-Gate Field-Effect Transistor-Based Biosensor\",\"authors\":\"Kanishk Singh;Chao-Hung Chen;Li-Chia Tai;Wei-Chen Huang;Tung-Ming Pan\",\"doi\":\"10.1109/LSENS.2024.3436106\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this research work, we present a flexible iridium oxide (IrO\\n<italic><sub>x</sub></i>\\n) extended-gate field-effect transistor (EGFET) biosensor for label-free detection of the epidermal growth factor receptor (EGFR) biomarker. IrO\\n<italic><sub>x</sub></i>\\n was employed as the sensing membrane material due to its excellent electrochemical properties, high conductivity, stability, biocompatibility, and ability to facilitate redox reactions. The IrO\\n<italic><sub>x</sub></i>\\n film was deposited on a flexible polyimide (PI) substrate through a sol–gel process and characterized using atomic force microscopy and X-ray photoelectron spectroscopy. As a pH sensor, the IrO\\n<italic><sub>x</sub></i>\\n EGFET exhibited a super-Nernstian sensitivity of 68.54 mV/pH with high linearity, a low hysteresis of ∼ 6 mV, and a drift rate of 0.50 mV/h at pH 7 over 12 h. For EGFR detection, the IrO\\n<italic><sub>x</sub></i>\\n surface was functionalized with 3-aminopropyltriethoxysilane and glutaraldehyde to immobilize anti-EGFR antibodies. The EGFR sensor demonstrated a wide linear detection range from 1 to 1000 ng/mL with a sensitivity of 11.78 mV/log(ng/mL) and a linearity of 99.8%, making it suitable for clinical EGFR monitoring in cancer patients. The flexible IrO\\n<italic><sub>x</sub></i>\\n EGFET shows promise for reliable label-free detection of EGFR.\",\"PeriodicalId\":13014,\"journal\":{\"name\":\"IEEE Sensors Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Sensors Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10616222/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10616222/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Label-Free EGFR Sensing by Using a Flexible IrOx Extended-Gate Field-Effect Transistor-Based Biosensor
In this research work, we present a flexible iridium oxide (IrO
x
) extended-gate field-effect transistor (EGFET) biosensor for label-free detection of the epidermal growth factor receptor (EGFR) biomarker. IrO
x
was employed as the sensing membrane material due to its excellent electrochemical properties, high conductivity, stability, biocompatibility, and ability to facilitate redox reactions. The IrO
x
film was deposited on a flexible polyimide (PI) substrate through a sol–gel process and characterized using atomic force microscopy and X-ray photoelectron spectroscopy. As a pH sensor, the IrO
x
EGFET exhibited a super-Nernstian sensitivity of 68.54 mV/pH with high linearity, a low hysteresis of ∼ 6 mV, and a drift rate of 0.50 mV/h at pH 7 over 12 h. For EGFR detection, the IrO
x
surface was functionalized with 3-aminopropyltriethoxysilane and glutaraldehyde to immobilize anti-EGFR antibodies. The EGFR sensor demonstrated a wide linear detection range from 1 to 1000 ng/mL with a sensitivity of 11.78 mV/log(ng/mL) and a linearity of 99.8%, making it suitable for clinical EGFR monitoring in cancer patients. The flexible IrO
x
EGFET shows promise for reliable label-free detection of EGFR.