A. L. Zakgeim, A. A. Klimov, T. S. Lukhmyrina, B. A. Matveev, A. E. Chernyakov
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引用次数: 0
摘要
摘要 本文研究了基于 p-InAsSbP/n-InAsSb 异质结构的中红外 "倒装芯片 "发光二极管的热阻。研究表明,通过热控制单元(正向 p-n 结电压)测量基于窄间隙半导体的 LED 的热阻,必须在热控制单元恒定的低温条件下进行。
Thermal Resistance of LEDs Based on a Narrow-Gap InAsSb Solid Solution
This paper examines the thermal resistance of the mid-infrared “flip-chip” LEDs based on the p‑InAsSbP/n-InAsSb heterostructure. It was shown that the measurement of thermal resistance via a thermal control unit (forward p–n junction voltage) for LEDs based on narrow-gap semiconductors must be carried out at low temperature when thermal control unit is constant.
期刊介绍:
Optics and Spectroscopy (Optika i spektroskopiya), founded in 1956, presents original and review papers in various fields of modern optics and spectroscopy in the entire wavelength range from radio waves to X-rays. Topics covered include problems of theoretical and experimental spectroscopy of atoms, molecules, and condensed state, lasers and the interaction of laser radiation with matter, physical and geometrical optics, holography, and physical principles of optical instrument making.