{"title":"基于负载调制平衡放大器的 GaN MMIC 双非对称朗格耦合器，用于提高后级效率","authors":"Luqi Yu;Yucheng Yu;Gaojing Zhang;Peng Chen;Chao Yu","doi":"10.1109/LMWT.2024.3420946","DOIUrl":null,"url":null,"abstract":"In this letter, a dual-asymmetrical-Lange-coupler-based load-modulated balanced amplifier (DALC-LMBA) topology is proposed for back-off efficiency enhancement. An input asymmetrical Lange coupler (ALC) is used to sequentially turn on the balanced amplifiers (BAs) for power back-off efficiency enhancement, another output ALC is adopted to generate proper load modulation (LM) for all three transistors. To verify the proposed design approach, a 23–25 GHz DALC-LMBA was implemented in a 0.12-\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\nm gallium nitride (GaN) process. It achieves 34–34.5 dBm saturated output power with 18%–20% power-added-efficiency (PAE) and 14%–18% 8-dB back-off PAE across the band. When excited by a 200-MHz 7.2-dB peak-to-average power ratio 5G new radio (NR) signal with digital predistortion, it achieves 14.4%–18% average PAE and better than −41 dBc adjacent channel leakage ratio (ACLR).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"1031-1034"},"PeriodicalIF":0.0000,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A GaN MMIC Dual-Asymmetrical-Lange-Coupler-Based Load-Modulated Balanced Amplifier for Back-Off Efficiency Enhancement\",\"authors\":\"Luqi Yu;Yucheng Yu;Gaojing Zhang;Peng Chen;Chao Yu\",\"doi\":\"10.1109/LMWT.2024.3420946\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, a dual-asymmetrical-Lange-coupler-based load-modulated balanced amplifier (DALC-LMBA) topology is proposed for back-off efficiency enhancement. An input asymmetrical Lange coupler (ALC) is used to sequentially turn on the balanced amplifiers (BAs) for power back-off efficiency enhancement, another output ALC is adopted to generate proper load modulation (LM) for all three transistors. To verify the proposed design approach, a 23–25 GHz DALC-LMBA was implemented in a 0.12-\\n<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>\\nm gallium nitride (GaN) process. It achieves 34–34.5 dBm saturated output power with 18%–20% power-added-efficiency (PAE) and 14%–18% 8-dB back-off PAE across the band. When excited by a 200-MHz 7.2-dB peak-to-average power ratio 5G new radio (NR) signal with digital predistortion, it achieves 14.4%–18% average PAE and better than −41 dBc adjacent channel leakage ratio (ACLR).\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"34 8\",\"pages\":\"1031-1034\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-07-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10587293/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10587293/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A GaN MMIC Dual-Asymmetrical-Lange-Coupler-Based Load-Modulated Balanced Amplifier for Back-Off Efficiency Enhancement
In this letter, a dual-asymmetrical-Lange-coupler-based load-modulated balanced amplifier (DALC-LMBA) topology is proposed for back-off efficiency enhancement. An input asymmetrical Lange coupler (ALC) is used to sequentially turn on the balanced amplifiers (BAs) for power back-off efficiency enhancement, another output ALC is adopted to generate proper load modulation (LM) for all three transistors. To verify the proposed design approach, a 23–25 GHz DALC-LMBA was implemented in a 0.12-
$\mu $
m gallium nitride (GaN) process. It achieves 34–34.5 dBm saturated output power with 18%–20% power-added-efficiency (PAE) and 14%–18% 8-dB back-off PAE across the band. When excited by a 200-MHz 7.2-dB peak-to-average power ratio 5G new radio (NR) signal with digital predistortion, it achieves 14.4%–18% average PAE and better than −41 dBc adjacent channel leakage ratio (ACLR).
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