{"title":"不同润滑条件下 4H-SiC 衬底的摩擦学行为研究","authors":"","doi":"10.1016/j.wear.2024.205537","DOIUrl":null,"url":null,"abstract":"<div><p>Lubrication conditions are an important factor affecting both the machining efficiency and quality of 4H–SiC. To investigate the tribological behaviors under different lubrication conditions, a series of scratching experiments are conducted under different loads and environments. The X-ray photoelectron spectroscopy (XPS) surveys and atomistic simulations are used to explain the different tribological behaviors. Both experimental and simulation results show that liquid lubrication can significantly reduce the coefficient of friction (COF) and minimize structural damage. Compared to pure water, the H<sub>2</sub>O<sub>2</sub> solution is more conducive to the oxidation of SiC atoms and the modification of tribological behaviors. However, the difference in tribological behaviors between H<sub>2</sub>O<sub>2</sub> solution and pure water diminishes as the load increases. The XPS surveys show that the liquids lead to higher-order oxidized species of SiC atoms, such as Si<sub>4</sub>C<sub>4-x</sub>O<sub>2</sub> and Si-O<sub>x</sub>-C<sub>y</sub>, which are also observed in the simulation results. It is shown that the oxidized species can reduce the direct bonding between SiC and diamond indenter, which is an important reason for the lower COFs in the liquids. Since the liquids can reduce the direct bonding and mechanical interaction between 4H–SiC and diamond, the material removal rate is much lower under lubrication conditions.</p></div>","PeriodicalId":23970,"journal":{"name":"Wear","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of the tribological behaviors for 4H–SiC substrate under different lubrication conditions\",\"authors\":\"\",\"doi\":\"10.1016/j.wear.2024.205537\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Lubrication conditions are an important factor affecting both the machining efficiency and quality of 4H–SiC. To investigate the tribological behaviors under different lubrication conditions, a series of scratching experiments are conducted under different loads and environments. The X-ray photoelectron spectroscopy (XPS) surveys and atomistic simulations are used to explain the different tribological behaviors. Both experimental and simulation results show that liquid lubrication can significantly reduce the coefficient of friction (COF) and minimize structural damage. Compared to pure water, the H<sub>2</sub>O<sub>2</sub> solution is more conducive to the oxidation of SiC atoms and the modification of tribological behaviors. However, the difference in tribological behaviors between H<sub>2</sub>O<sub>2</sub> solution and pure water diminishes as the load increases. The XPS surveys show that the liquids lead to higher-order oxidized species of SiC atoms, such as Si<sub>4</sub>C<sub>4-x</sub>O<sub>2</sub> and Si-O<sub>x</sub>-C<sub>y</sub>, which are also observed in the simulation results. It is shown that the oxidized species can reduce the direct bonding between SiC and diamond indenter, which is an important reason for the lower COFs in the liquids. Since the liquids can reduce the direct bonding and mechanical interaction between 4H–SiC and diamond, the material removal rate is much lower under lubrication conditions.</p></div>\",\"PeriodicalId\":23970,\"journal\":{\"name\":\"Wear\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2024-08-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Wear\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0043164824003028\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, MECHANICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Wear","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0043164824003028","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, MECHANICAL","Score":null,"Total":0}
引用次数: 0
摘要
润滑条件是影响 4H-SiC 加工效率和质量的重要因素。为了研究不同润滑条件下的摩擦学行为,我们在不同载荷和环境下进行了一系列划痕实验。X 射线光电子能谱(XPS)调查和原子模拟用于解释不同的摩擦学行为。实验和模拟结果都表明,液体润滑能显著降低摩擦系数(COF),并将结构损伤降至最低。与纯水相比,H2O2 溶液更有利于 SiC 原子的氧化和摩擦学行为的改变。然而,随着载荷的增加,H2O2 溶液与纯水在摩擦学行为上的差异会逐渐减小。XPS 勘测表明,液体会导致 SiC 原子的高阶氧化物种,如 Si4C4-xO2 和 Si-Ox-Cy,模拟结果中也观察到了这些氧化物种。结果表明,氧化物会减少 SiC 与金刚石压头之间的直接结合,这是液体中 COF 值较低的一个重要原因。由于液体可以减少 4H-SiC 与金刚石之间的直接结合和机械相互作用,因此在润滑条件下材料去除率会大大降低。
Investigation of the tribological behaviors for 4H–SiC substrate under different lubrication conditions
Lubrication conditions are an important factor affecting both the machining efficiency and quality of 4H–SiC. To investigate the tribological behaviors under different lubrication conditions, a series of scratching experiments are conducted under different loads and environments. The X-ray photoelectron spectroscopy (XPS) surveys and atomistic simulations are used to explain the different tribological behaviors. Both experimental and simulation results show that liquid lubrication can significantly reduce the coefficient of friction (COF) and minimize structural damage. Compared to pure water, the H2O2 solution is more conducive to the oxidation of SiC atoms and the modification of tribological behaviors. However, the difference in tribological behaviors between H2O2 solution and pure water diminishes as the load increases. The XPS surveys show that the liquids lead to higher-order oxidized species of SiC atoms, such as Si4C4-xO2 and Si-Ox-Cy, which are also observed in the simulation results. It is shown that the oxidized species can reduce the direct bonding between SiC and diamond indenter, which is an important reason for the lower COFs in the liquids. Since the liquids can reduce the direct bonding and mechanical interaction between 4H–SiC and diamond, the material removal rate is much lower under lubrication conditions.
期刊介绍:
Wear journal is dedicated to the advancement of basic and applied knowledge concerning the nature of wear of materials. Broadly, topics of interest range from development of fundamental understanding of the mechanisms of wear to innovative solutions to practical engineering problems. Authors of experimental studies are expected to comment on the repeatability of the data, and whenever possible, conduct multiple measurements under similar testing conditions. Further, Wear embraces the highest standards of professional ethics, and the detection of matching content, either in written or graphical form, from other publications by the current authors or by others, may result in rejection.