基于 AlSc0.095N 的高 k2eff 二维耦合模式谐振器与面向 5G 应用的换能器设计

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-08-09 DOI:10.1016/j.mejo.2024.106364

Zexin Sun , Shitao Lv , Wenhao Ye , Xinyi Sun , Haiyan Sun , Jicong Zhao

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引用次数: 0

摘要

本文介绍了基于 9.5% 掺钪氮化铝 (AlScN) 薄膜的二维耦合模式谐振器 (TCMR)。我们报告了 770 nm 厚的 AlSc0.095N TCMR 的设计、制造和表征，它利用 e31 和 e33 压电系数共同激发具有高机电耦合系数 (k2eff) 的耦合模式。提出了具有不同电边界条件的 TCMR（TCMR-I 和 TCMR-II），并研究了谐振模式对电极周期的依赖性。探讨了电极占空比（DF）对谐振器性能的影响，DF = 0.5 的 TCMR-Ⅰ 和 TCMR-Ⅱ 均显示出最大的 k2eff 值。通过测量表征和仿真分析，研究了互插换能器（IDT）厚度对谐振器性能的影响。此外，还利用 MBVD 等效电路模型提取了所制备谐振器的等效电气参数。本文制备的 TCMR-Ⅰ 和 TCMR-Ⅱ 的 Qs 值分别达到 1134 和 165，k2eff 值分别达到 3.5 % 和 7.86 %。

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High-k2eff AlSc0.095N-based two-dimensional coupled mode resonators with transducer design toward 5G application

This paper presents the two-dimensional coupled mode resonators (TCMRs) based on 9.5 % scandium-doped aluminum nitride (AlScN) films. We report the design, fabrication, and characterization of 770 nm-thick AlSc_0.095N TCMRs, which utilize the e₃₁ and e₃₃ piezoelectric coefficients to jointly excite the coupled mode with high electromechanical coupling coefficient (k²_eff). The TCMRs with different electrical boundary conditions (TCMR-I and TCMR-II) are proposed, and the dependence of the resonant mode on the electrode period was studied. The effect of electrode duty factor (DF) on the resonator performance was explored, and both TCMR-Ⅰ and TCMR-II with DF = 0.5 exhibit the maximum k²_eff value. Through measured characterization and simulation analysis, the effect of interdigitated transducer (IDT) thickness on resonator performance was studied. In addition, the equivalent electrical parameters of the prepared resonator were extracted using the MBVD equivalent circuit model. The Q_s values of TCMR-Ⅰ and TCMR-II fabricated in this paper can reach 1134 and 165, and the k²_eff values can reach 3.5 % and 7.86 %, respectively.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.