{"title":"基于 AlSc0.095N 的高 k2eff 二维耦合模式谐振器与面向 5G 应用的换能器设计","authors":"","doi":"10.1016/j.mejo.2024.106364","DOIUrl":null,"url":null,"abstract":"<div><p>This paper presents the two-dimensional coupled mode resonators (TCMRs) based on 9.5 % scandium-doped aluminum nitride (AlScN) films. We report the design, fabrication, and characterization of 770 nm-thick AlSc<sub>0.095</sub>N TCMRs, which utilize the <em>e</em><sub>31</sub> and <em>e</em><sub>33</sub> piezoelectric coefficients to jointly excite the coupled mode with high electromechanical coupling coefficient (<em>k</em><sup>2</sup><sub><em>eff</em></sub>). The TCMRs with different electrical boundary conditions (TCMR-I and TCMR-II) are proposed, and the dependence of the resonant mode on the electrode period was studied. The effect of electrode duty factor (<em>DF</em>) on the resonator performance was explored, and both TCMR-Ⅰ and TCMR-II with <em>DF</em> = 0.5 exhibit the maximum <em>k</em><sup>2</sup><sub><em>eff</em></sub> value. Through measured characterization and simulation analysis, the effect of interdigitated transducer (IDT) thickness on resonator performance was studied. In addition, the equivalent electrical parameters of the prepared resonator were extracted using the MBVD equivalent circuit model. The <em>Q</em><sub><em>s</em></sub> values of TCMR-Ⅰ and TCMR-II fabricated in this paper can reach 1134 and 165, and the <em>k</em><sup>2</sup><sub><em>eff</em></sub> values can reach 3.5 % and 7.86 %, respectively.</p></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-k2eff AlSc0.095N-based two-dimensional coupled mode resonators with transducer design toward 5G application\",\"authors\":\"\",\"doi\":\"10.1016/j.mejo.2024.106364\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This paper presents the two-dimensional coupled mode resonators (TCMRs) based on 9.5 % scandium-doped aluminum nitride (AlScN) films. We report the design, fabrication, and characterization of 770 nm-thick AlSc<sub>0.095</sub>N TCMRs, which utilize the <em>e</em><sub>31</sub> and <em>e</em><sub>33</sub> piezoelectric coefficients to jointly excite the coupled mode with high electromechanical coupling coefficient (<em>k</em><sup>2</sup><sub><em>eff</em></sub>). The TCMRs with different electrical boundary conditions (TCMR-I and TCMR-II) are proposed, and the dependence of the resonant mode on the electrode period was studied. The effect of electrode duty factor (<em>DF</em>) on the resonator performance was explored, and both TCMR-Ⅰ and TCMR-II with <em>DF</em> = 0.5 exhibit the maximum <em>k</em><sup>2</sup><sub><em>eff</em></sub> value. Through measured characterization and simulation analysis, the effect of interdigitated transducer (IDT) thickness on resonator performance was studied. In addition, the equivalent electrical parameters of the prepared resonator were extracted using the MBVD equivalent circuit model. The <em>Q</em><sub><em>s</em></sub> values of TCMR-Ⅰ and TCMR-II fabricated in this paper can reach 1134 and 165, and the <em>k</em><sup>2</sup><sub><em>eff</em></sub> values can reach 3.5 % and 7.86 %, respectively.</p></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-08-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1879239124000687\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124000687","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
This paper presents the two-dimensional coupled mode resonators (TCMRs) based on 9.5 % scandium-doped aluminum nitride (AlScN) films. We report the design, fabrication, and characterization of 770 nm-thick AlSc0.095N TCMRs, which utilize the e31 and e33 piezoelectric coefficients to jointly excite the coupled mode with high electromechanical coupling coefficient (k2eff). The TCMRs with different electrical boundary conditions (TCMR-I and TCMR-II) are proposed, and the dependence of the resonant mode on the electrode period was studied. The effect of electrode duty factor (DF) on the resonator performance was explored, and both TCMR-Ⅰ and TCMR-II with DF = 0.5 exhibit the maximum k2eff value. Through measured characterization and simulation analysis, the effect of interdigitated transducer (IDT) thickness on resonator performance was studied. In addition, the equivalent electrical parameters of the prepared resonator were extracted using the MBVD equivalent circuit model. The Qs values of TCMR-Ⅰ and TCMR-II fabricated in this paper can reach 1134 and 165, and the k2eff values can reach 3.5 % and 7.86 %, respectively.
期刊介绍：
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
