通过缺陷控制工程实现 MoTe2 的电子特性

IF 7.4 3区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Science and Technology of Advanced Materials Pub Date : 2024-08-05 DOI:10.1080/14686996.2024.2388502

Celal Yelgel, Övgü C. Yelgel

引用次数: 0

摘要

单层碲化镉（MoTe2）具有非凡的电子特性，是一种非常适合用于光电和纳米电子应用的材料。MoTe2 在生长过程中通常会出现固有缺陷，这些缺陷可能会影响其电子性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Engineering the electronic properties of MoTe2 via defect control

The remarkable electronic properties of monolayer MoTe2 make it a very adaptable material for use in optoelectronic and nano electronic applications. MoTe2 growth often exhibits intrinsic defects, ...

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来源期刊

Science and Technology of Advanced Materials 工程技术-材料科学：综合

CiteScore

10.60

自引率

3.60%

发文量

审稿时长

4.8 months

期刊介绍： Science and Technology of Advanced Materials (STAM) is a leading open access, international journal for outstanding research articles across all aspects of materials science. Our audience is the international community across the disciplines of materials science, physics, chemistry, biology as well as engineering. The journal covers a broad spectrum of topics including functional and structural materials, synthesis and processing, theoretical analyses, characterization and properties of materials. Emphasis is placed on the interdisciplinary nature of materials science and issues at the forefront of the field, such as energy and environmental issues, as well as medical and bioengineering applications. Of particular interest are research papers on the following topics: Materials informatics and materials genomics Materials for 3D printing and additive manufacturing Nanostructured/nanoscale materials and nanodevices Bio-inspired, biomedical, and biological materials; nanomedicine, and novel technologies for clinical and medical applications Materials for energy and environment, next-generation photovoltaics, and green technologies Advanced structural materials, materials for extreme conditions.