{"title":"用于低功耗应用的带有介电质 HfO2 和 Al2O3 的铁电纳米线的设计和比较分析","authors":"Mohit Kumar, Tarun Chaudhary, Balwinder Raj","doi":"10.1007/s11664-024-11332-1","DOIUrl":null,"url":null,"abstract":"<p>This paper reports the design of ferroelectric nanowires using HfO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub>. Ferroelectric nanowire transistors have drawn considerable attention recently because of their potential for use in low-power devices and non-volatile memory systems. In this work, the drain current, acceptor concentrations, and electric field are analyzed. The results obtained for the proposed device structure highlight the relevance of Al<sub>2</sub>O<sub>3</sub>- and HfO<sub>2</sub>-based nanowires as potential materials for the development of cutting-edge nanotechnology and materials science advancements. The proposed device structure has <i>I</i><sub>ON</sub> = 3.8 × 10<sup>−5</sup> using HfO<sub>2</sub> and <i>I</i><sub>ON</sub> = 3.48 × 10<sup>−4</sup> using Al<sub>2</sub>O<sub>3</sub>. The significant improvements in the results make ferroelectric nanowire interesting for the scientific and research community working in this area.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"40 1","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2024-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Comparative Analysis of Ferroelectric Nanowire with Dielectric HfO2 and Al2O3 for Low-Power Applications\",\"authors\":\"Mohit Kumar, Tarun Chaudhary, Balwinder Raj\",\"doi\":\"10.1007/s11664-024-11332-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>This paper reports the design of ferroelectric nanowires using HfO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub>. Ferroelectric nanowire transistors have drawn considerable attention recently because of their potential for use in low-power devices and non-volatile memory systems. In this work, the drain current, acceptor concentrations, and electric field are analyzed. The results obtained for the proposed device structure highlight the relevance of Al<sub>2</sub>O<sub>3</sub>- and HfO<sub>2</sub>-based nanowires as potential materials for the development of cutting-edge nanotechnology and materials science advancements. The proposed device structure has <i>I</i><sub>ON</sub> = 3.8 × 10<sup>−5</sup> using HfO<sub>2</sub> and <i>I</i><sub>ON</sub> = 3.48 × 10<sup>−4</sup> using Al<sub>2</sub>O<sub>3</sub>. The significant improvements in the results make ferroelectric nanowire interesting for the scientific and research community working in this area.</p>\",\"PeriodicalId\":626,\"journal\":{\"name\":\"Journal of Electronic Materials\",\"volume\":\"40 1\",\"pages\":\"\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-08-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electronic Materials\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s11664-024-11332-1\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11664-024-11332-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Design and Comparative Analysis of Ferroelectric Nanowire with Dielectric HfO2 and Al2O3 for Low-Power Applications
This paper reports the design of ferroelectric nanowires using HfO2 and Al2O3. Ferroelectric nanowire transistors have drawn considerable attention recently because of their potential for use in low-power devices and non-volatile memory systems. In this work, the drain current, acceptor concentrations, and electric field are analyzed. The results obtained for the proposed device structure highlight the relevance of Al2O3- and HfO2-based nanowires as potential materials for the development of cutting-edge nanotechnology and materials science advancements. The proposed device structure has ION = 3.8 × 10−5 using HfO2 and ION = 3.48 × 10−4 using Al2O3. The significant improvements in the results make ferroelectric nanowire interesting for the scientific and research community working in this area.
期刊介绍：
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.
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