Li2-3xLnxGeTeO6 (Ln = Eu3+、Tb3+;x = 0.0、0.02、0.05、0.075 和 0.1)的制备、表征、光致发光和热致发光研究

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Trinadh Amarapuri, Srikanth Koneti, Vithal Muga, Srinivas Mudavat
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引用次数: 0

摘要

成功制备了掺杂 Ln3+ (Ln = Eu3+,Tb3+:0.0 < x < 0.1) 的 Li2-3xLnxGeTeO6 荧光粉。母体 Li2GeTeO6 是通过固态法获得的,而掺杂 Ln 的成分则是通过简便的离子交换法合成的。制备的荧光粉通过粉末 X 射线衍射 (P-XRD)、扫描电子显微镜 (SEM)、傅立叶变换红外光谱 (FT-IR) 和拉曼光谱技术进行了表征。所有样品均为斜方晶体结构,空间群为 R3/(146)。研究了 Li2-3xLnx3+GeTeO6 的光致发光(PL)和热致发光(TL)特性。通过监测 611/544 nm 发射线获得了掺杂 Eu3+/Tb3+ 样品的激发光谱。掺杂 Eu3+/Tb3+ 的样品的发射光谱是在 394/372 nm 处激发记录的。Li2-3xEuxGeTeO6 荧光粉在 611 纳米波长处呈现红色发射,并有一个最大的强波段。Li2-3xTbxGeTeO6 荧光粉在 544 纳米波长处发出绿色范围的强发射带。研究了发射随掺杂剂浓度的变化。研究发现,掺杂 Eu3+- 和 Tb3+ 的荧光粉在浓度超过 0.05 mol.% 时都会出现浓度淬灭现象,这一点已在 Blasse 方程和 Dexter 理论的基础上得到证实。根据 NTSC 标准,Eu3+- 和 Tb3+-掺杂荧光粉的色度坐标分别位于红色和绿色区域。0.05 mol.% 的 Eu3+(Tb3+)掺杂 Li2GeTeO6 的色纯度值分别为 54% 和 43%。Li2-3xEuxGeTeO6 和 Li2-3xTbxGeTeO6 的相关色温 (CCT) 值分别为 2763 K 和 4562 K,表明它们适合用于暖白光和冷白光设备。利用陈辉光曲线峰形法计算了合成样品的阱深度/活化能、运动学阶次和频率因子等参数。研究表明,掺杂 Eu3+ 和 Tb3+ 的 Li2GeTeO6 成分可用作白光 LED。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Preparation, Characterization, Photoluminescence and Thermoluminescence Studies of Li2−3xLnxGeTeO6 (Ln = Eu3+, Tb3+; x = 0.0, 0.02, 0.05, 0.075 and 0.1)

Preparation, Characterization, Photoluminescence and Thermoluminescence Studies of Li2−3xLnxGeTeO6 (Ln = Eu3+, Tb3+; x = 0.0, 0.02, 0.05, 0.075 and 0.1)

Li2-3xLnxGeTeO6 phosphors with doping of Ln3+ (Ln = Eu3+,Tb3+:0.0 < x < 0.1) were successfully prepared. Parent Li2GeTeO6 was obtained by the solid-state method, while Ln-doped compositions were synthesized by the facile ion-exchange method. The prepared phosphors were characterized by powder x-ray diffraction (P-XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy techniques. All of the samples were crystallized in rhombohedral structure with space group R3/(146). The photoluminescence (PL) and thermoluminescence (TL) characteristics of Li2-3xLnx3+GeTeO6 were studied. The excitation spectra of Eu3+/Tb3+-doped samples were obtained by monitoring the 611/544 nm emission line. The emission spectra of Eu3+/Tb3+-doped samples were recorded by excitation at 394/372 nm. The Li2-3xEuxGeTeO6 phosphor exhibited red emission with a maximum intense band at 611 nm. The Li2-3xTbxGeTeO6 phosphor gave a strong emission band at 544 nm in the green range. The variation in emission with dopant concentration was studied. It was found that the concentration quenching was predominant above 0.05 mol.% in both Eu3+- and Tb3+-doped phosphors, which was demonstrated based on Blasse’s equation and Dexter’s theory. The chromaticity coordinates of Eu3+- and Tb3+-incorporated phosphors were located at red and green regions, respectively, as per NTSC standards. The colour purity values for 0.05 mol.% of Eu3+ (Tb3+)-doped Li2GeTeO6were 54% and 43%, respectively. The correlated colour temperature (CCT) values of Li2-3xEuxGeTeO6and Li2-3xTbxGeTeO6 were 2763 K and 4562 K, respectively, indicating their suitability for use in warm and cool white-light devices. The parameters of trap-depth/activation-energy, order of kinematics and frequency-factor of the synthesized samples were calculated using the Chen glow curve peak-shape method. The investigation shows Eu3+- and Tb3+-doped Li2GeTeO6 compositions can be utilized as white-LEDs.

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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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