基于极化效应的具有可调内部电场的 CuO/BaTiO3 异质结光电探测器的超低功耗光电逻辑操作

IF 6.4 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Junhyung Cho, Wangmyung Choi, Taehyun Park, Hocheon Yoo
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引用次数: 0

摘要

该研究提出了一种新型自供电紫外线(UV)光电探测器,利用偏振场和光伏效应,实现了超低功耗、可重构的光电逻辑门。我们在一个铜氧化物/钡钛氧化物异质结光电探测器上演示了这种方法。极化效应增强了光电探测器的性能,通过施加强大的外部电场来调整 BaTiO3 的内部电场,从而促进光电逻辑门的实现。在未极化状态下,"XOR "和 "OR "逻辑门的工作电压分别为 750 微伏和-500 微伏。然而,在极化状态下,"XOR "逻辑门的工作电压降低,工作电压为 500 µV,而 "OR "逻辑门的清晰度则为-500 µV。在未极化状态下,"AND "逻辑门不工作;但在向下极化时,其工作电压为-500 µV。这一成果表明,在波长为 310 纳米、光强为 0.52 mW-cm-2 的条件下,利用数百微米级的电压,成功实现了超低功耗逻辑运算。此外,BaTiO3 中的可控极化电场使 "AND "逻辑门能够在无极化状态下运行,为未来的光电逻辑门设计研究开辟了一条前景广阔的道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Ultra Low Power Consumption Optoelectronic Logic Operation of CuO/BaTiO3 Heterojunction Photodetector with Tunable Internal Electric Field Based on Poling Effect

Ultra Low Power Consumption Optoelectronic Logic Operation of CuO/BaTiO3 Heterojunction Photodetector with Tunable Internal Electric Field Based on Poling Effect

Ultra Low Power Consumption Optoelectronic Logic Operation of CuO/BaTiO3 Heterojunction Photodetector with Tunable Internal Electric Field Based on Poling Effect

The study presents a novel self-powered ultraviolet (UV) photodetector harnessing both polarization fields and photovoltaic effects, enabling the realization of ultra-low power, reconfigurable optoelectronic logic gates. The approach is demonstrated on a CuO/BaTiO3 heterojunction photodetector. The behavior of the photodetector is augmented by the poling effect, aligning the internal electric field of the BaTiO3 through the application of a robust external electric field, thereby facilitating the implementation of optoelectronic logic gates. In the unpoled state, the “XOR” and “OR” logic gates operated at voltages of 750 and −500 µV, respectively. However, upon poling up state, the “XOR” logic gate exhibits reduced operation voltage, operating at 500 µV, while the “OR” logic gate implements clarity at −500 µV. In the unpoled state the “AND” logic gate does not operate; however, upon poling in the downward direction, it operated at −500 µV. The achievement demonstrates successful ultra-low-power logic operations, utilizing voltages in the hundreds of micron scale, under a 310 nm wavelength and a light intensity of 0.52 mW·cm−2. Furthermore, controllable polarization electric fields in BaTiO3 enable the operation of “AND” logic gate in the unpoled state, presenting a promising avenue for future research in optoelectronic logic gate design.

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来源期刊
Advanced Materials Technologies
Advanced Materials Technologies Materials Science-General Materials Science
CiteScore
10.20
自引率
4.40%
发文量
566
期刊介绍: Advanced Materials Technologies Advanced Materials Technologies is the new home for all technology-related materials applications research, with particular focus on advanced device design, fabrication and integration, as well as new technologies based on novel materials. It bridges the gap between fundamental laboratory research and industry.
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