Junhyung Cho, Wangmyung Choi, Taehyun Park, Hocheon Yoo
{"title":"基于极化效应的具有可调内部电场的 CuO/BaTiO3 异质结光电探测器的超低功耗光电逻辑操作","authors":"Junhyung Cho, Wangmyung Choi, Taehyun Park, Hocheon Yoo","doi":"10.1002/admt.202400697","DOIUrl":null,"url":null,"abstract":"<p>The study presents a novel self-powered ultraviolet (UV) photodetector harnessing both polarization fields and photovoltaic effects, enabling the realization of ultra-low power, reconfigurable optoelectronic logic gates. The approach is demonstrated on a CuO/BaTiO<sub>3</sub> heterojunction photodetector. The behavior of the photodetector is augmented by the poling effect, aligning the internal electric field of the BaTiO<sub>3</sub> through the application of a robust external electric field, thereby facilitating the implementation of optoelectronic logic gates. In the unpoled state, the “XOR” and “OR” logic gates operated at voltages of 750 and −500 µV, respectively. However, upon poling up state, the “XOR” logic gate exhibits reduced operation voltage, operating at 500 µV, while the “OR” logic gate implements clarity at −500 µV. In the unpoled state the “AND” logic gate does not operate; however, upon poling in the downward direction, it operated at −500 µV. The achievement demonstrates successful ultra-low-power logic operations, utilizing voltages in the hundreds of micron scale, under a 310 nm wavelength and a light intensity of 0.52 mW·cm<sup>−2</sup>. Furthermore, controllable polarization electric fields in BaTiO<sub>3</sub> enable the operation of “AND” logic gate in the unpoled state, presenting a promising avenue for future research in optoelectronic logic gate design.</p>","PeriodicalId":7292,"journal":{"name":"Advanced Materials Technologies","volume":"9 24","pages":""},"PeriodicalIF":6.4000,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultra Low Power Consumption Optoelectronic Logic Operation of CuO/BaTiO3 Heterojunction Photodetector with Tunable Internal Electric Field Based on Poling Effect\",\"authors\":\"Junhyung Cho, Wangmyung Choi, Taehyun Park, Hocheon Yoo\",\"doi\":\"10.1002/admt.202400697\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The study presents a novel self-powered ultraviolet (UV) photodetector harnessing both polarization fields and photovoltaic effects, enabling the realization of ultra-low power, reconfigurable optoelectronic logic gates. The approach is demonstrated on a CuO/BaTiO<sub>3</sub> heterojunction photodetector. The behavior of the photodetector is augmented by the poling effect, aligning the internal electric field of the BaTiO<sub>3</sub> through the application of a robust external electric field, thereby facilitating the implementation of optoelectronic logic gates. In the unpoled state, the “XOR” and “OR” logic gates operated at voltages of 750 and −500 µV, respectively. However, upon poling up state, the “XOR” logic gate exhibits reduced operation voltage, operating at 500 µV, while the “OR” logic gate implements clarity at −500 µV. In the unpoled state the “AND” logic gate does not operate; however, upon poling in the downward direction, it operated at −500 µV. The achievement demonstrates successful ultra-low-power logic operations, utilizing voltages in the hundreds of micron scale, under a 310 nm wavelength and a light intensity of 0.52 mW·cm<sup>−2</sup>. Furthermore, controllable polarization electric fields in BaTiO<sub>3</sub> enable the operation of “AND” logic gate in the unpoled state, presenting a promising avenue for future research in optoelectronic logic gate design.</p>\",\"PeriodicalId\":7292,\"journal\":{\"name\":\"Advanced Materials Technologies\",\"volume\":\"9 24\",\"pages\":\"\"},\"PeriodicalIF\":6.4000,\"publicationDate\":\"2024-08-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials Technologies\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/admt.202400697\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Technologies","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/admt.202400697","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Ultra Low Power Consumption Optoelectronic Logic Operation of CuO/BaTiO3 Heterojunction Photodetector with Tunable Internal Electric Field Based on Poling Effect
The study presents a novel self-powered ultraviolet (UV) photodetector harnessing both polarization fields and photovoltaic effects, enabling the realization of ultra-low power, reconfigurable optoelectronic logic gates. The approach is demonstrated on a CuO/BaTiO3 heterojunction photodetector. The behavior of the photodetector is augmented by the poling effect, aligning the internal electric field of the BaTiO3 through the application of a robust external electric field, thereby facilitating the implementation of optoelectronic logic gates. In the unpoled state, the “XOR” and “OR” logic gates operated at voltages of 750 and −500 µV, respectively. However, upon poling up state, the “XOR” logic gate exhibits reduced operation voltage, operating at 500 µV, while the “OR” logic gate implements clarity at −500 µV. In the unpoled state the “AND” logic gate does not operate; however, upon poling in the downward direction, it operated at −500 µV. The achievement demonstrates successful ultra-low-power logic operations, utilizing voltages in the hundreds of micron scale, under a 310 nm wavelength and a light intensity of 0.52 mW·cm−2. Furthermore, controllable polarization electric fields in BaTiO3 enable the operation of “AND” logic gate in the unpoled state, presenting a promising avenue for future research in optoelectronic logic gate design.
期刊介绍:
Advanced Materials Technologies Advanced Materials Technologies is the new home for all technology-related materials applications research, with particular focus on advanced device design, fabrication and integration, as well as new technologies based on novel materials. It bridges the gap between fundamental laboratory research and industry.