{"title":"(16-x-y)CaO-xSrO-yBaO-Li2O-Sm2O3-Nd2O3-TiO2 陶瓷体系中的高介电常数微波介质","authors":"Ting-Hao Lin, Ching-Cheng Huang, Tsung-Hsien Hsu, Cheng-Liang Huang","doi":"10.1007/s10854-024-13256-2","DOIUrl":null,"url":null,"abstract":"<div><p>This article presents the successful synthesis and characterization of a novel high dielectric constant ceramic system with near-zero temperature coefficient for microwave applications. The system, based on the 5CaO–10SrO–BaO–9Li<sub>2</sub>O–10Sm<sub>2</sub>O<sub>3</sub>–2Nd<sub>2</sub>O<sub>3</sub>–63TiO<sub>2</sub> composition, was developed through a systematic modification of the non-stoichiometric CaO–Li<sub>2</sub>O–Sm<sub>2</sub>O<sub>3</sub>–Nd<sub>2</sub>O<sub>3</sub>–TiO<sub>2</sub> (16:9:10:2:63) ceramic system using the conventional solid-state method. The initial focus of the study was on the effect of Sr substitution for Ca. By varying the Sr content from 1 to 11 mol% and sintering at temperatures ranging from 1120 to 1240 °C, it was observed that increasing Sr substitution led to a higher dielectric constant (<i>ε</i><sub><i>r</i></sub>), while the quality factor multiplied by the resonant frequency (<i>Q</i> × <i>f</i>) decreased, and the temperature coefficient of resonant frequency (<i>τ</i><sub><i>f</i></sub>) increased. Notably, at 1180 °C, the optimized composition with 11 mol% Sr substitution (CaO–SrO–Li<sub>2</sub>O–Sm<sub>2</sub>O<sub>3</sub>–Nd<sub>2</sub>O<sub>3</sub>–TiO<sub>2</sub> = 5: 11: 9: 10: 2: 63) achieved a dielectric constant of 140 and an acceptable <i>Q</i> × <i>f</i> value of 1,100 GHz. However, the <i>τ</i><sub><i>f</i></sub> value was measured as 49.7 ppm/°C, highlighting the need for further optimization for practical applications. To address the issue of the relatively high <i>τ</i><sub><i>f</i></sub>, 1 mol% of BaO was partially substituted for SrO. This substitution resulted in the formation of a Ba-substituted CSBLSNT phase, which successfully improved the <i>τ</i><sub><i>f</i></sub> to near-zero while maintaining a moderate <i>ε</i><sub><i>r</i></sub>. The optimized composition, with a molar ratio of 5: 10: 1: 9: 10:2: 63 for CaO–SrO–BaO–Li<sub>2</sub>O–Sm<sub>2</sub>O<sub>3</sub>–Nd<sub>2</sub>O<sub>3</sub>–TiO<sub>2</sub>, was sintered at 1180 °C for 4 h. The resulting ceramic exhibited excellent dielectric properties: <i>ε</i><sub><i>r</i></sub> = 132, <i>Q</i> × <i>f</i> = 1,200 GHz, <i>τ</i><sub><i>f</i></sub> = 5.3 ppm/°C. The combination of a high dielectric constant and near-zero <i>τ</i><sub><i>f</i></sub> value makes this ceramic system highly promising for the fabrication of smaller, more thermally stable microwave components.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-dielectric-constant microwave dielectric in the (16–x–y)CaO–xSrO–yBaO–Li2O–Sm2O3–Nd2O3–TiO2 ceramic system\",\"authors\":\"Ting-Hao Lin, Ching-Cheng Huang, Tsung-Hsien Hsu, Cheng-Liang Huang\",\"doi\":\"10.1007/s10854-024-13256-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This article presents the successful synthesis and characterization of a novel high dielectric constant ceramic system with near-zero temperature coefficient for microwave applications. The system, based on the 5CaO–10SrO–BaO–9Li<sub>2</sub>O–10Sm<sub>2</sub>O<sub>3</sub>–2Nd<sub>2</sub>O<sub>3</sub>–63TiO<sub>2</sub> composition, was developed through a systematic modification of the non-stoichiometric CaO–Li<sub>2</sub>O–Sm<sub>2</sub>O<sub>3</sub>–Nd<sub>2</sub>O<sub>3</sub>–TiO<sub>2</sub> (16:9:10:2:63) ceramic system using the conventional solid-state method. The initial focus of the study was on the effect of Sr substitution for Ca. By varying the Sr content from 1 to 11 mol% and sintering at temperatures ranging from 1120 to 1240 °C, it was observed that increasing Sr substitution led to a higher dielectric constant (<i>ε</i><sub><i>r</i></sub>), while the quality factor multiplied by the resonant frequency (<i>Q</i> × <i>f</i>) decreased, and the temperature coefficient of resonant frequency (<i>τ</i><sub><i>f</i></sub>) increased. Notably, at 1180 °C, the optimized composition with 11 mol% Sr substitution (CaO–SrO–Li<sub>2</sub>O–Sm<sub>2</sub>O<sub>3</sub>–Nd<sub>2</sub>O<sub>3</sub>–TiO<sub>2</sub> = 5: 11: 9: 10: 2: 63) achieved a dielectric constant of 140 and an acceptable <i>Q</i> × <i>f</i> value of 1,100 GHz. However, the <i>τ</i><sub><i>f</i></sub> value was measured as 49.7 ppm/°C, highlighting the need for further optimization for practical applications. To address the issue of the relatively high <i>τ</i><sub><i>f</i></sub>, 1 mol% of BaO was partially substituted for SrO. This substitution resulted in the formation of a Ba-substituted CSBLSNT phase, which successfully improved the <i>τ</i><sub><i>f</i></sub> to near-zero while maintaining a moderate <i>ε</i><sub><i>r</i></sub>. The optimized composition, with a molar ratio of 5: 10: 1: 9: 10:2: 63 for CaO–SrO–BaO–Li<sub>2</sub>O–Sm<sub>2</sub>O<sub>3</sub>–Nd<sub>2</sub>O<sub>3</sub>–TiO<sub>2</sub>, was sintered at 1180 °C for 4 h. The resulting ceramic exhibited excellent dielectric properties: <i>ε</i><sub><i>r</i></sub> = 132, <i>Q</i> × <i>f</i> = 1,200 GHz, <i>τ</i><sub><i>f</i></sub> = 5.3 ppm/°C. The combination of a high dielectric constant and near-zero <i>τ</i><sub><i>f</i></sub> value makes this ceramic system highly promising for the fabrication of smaller, more thermally stable microwave components.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13256-2\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13256-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
本文介绍了一种新型高介电常数陶瓷系统的成功合成和特性分析,该系统的温度系数接近零,适用于微波应用。该体系基于 5CaO-10SrO-BaO-9Li2O-10Sm2O3-2Nd2O3-63TiO2 成分,是通过使用传统固态方法对非化学计量 CaO-Li2O-Sm2O3-Nd2O3-TiO2 (16:9:10:2:63) 陶瓷体系进行系统改性而得到的。研究的最初重点是 Sr 替代 Ca 的影响。通过改变 Sr 含量(1-11 摩尔%)并在 1120 至 1240 ℃ 的温度下烧结,观察到 Sr 替代量的增加导致介电常数(εr)的提高,而品质因数乘以谐振频率(Q × f)降低,谐振频率的温度系数(τf)增加。值得注意的是,在 1180 °C 时,Sr 取代量为 11 mol% 的优化组合(CaO-SrO-Li2O-Sm2O3-Nd2O3-TiO2 = 5: 11: 9: 10: 2: 63)达到了 140 的介电常数和可接受的 1,100 GHz Q × f 值。然而,τf 值的测量值为 49.7 ppm/°C,这表明在实际应用中需要进一步优化。为了解决τf 值相对较高的问题,我们用 1 mol% 的氧化钡部分替代氧化锶。这种替代形成了钡替代 CSBLSNT 相,成功地将τf 提高到接近零,同时保持了适度的 εr。在 1180 °C 下烧结 4 小时后,得到的陶瓷表现出优异的介电性能:εr = 132,Q × f = 1,200 GHz,τf = 5.3 ppm/°C。高介电常数与接近零的τf 值相结合,使这种陶瓷系统在制造更小、热稳定性更高的微波元件方面大有可为。
High-dielectric-constant microwave dielectric in the (16–x–y)CaO–xSrO–yBaO–Li2O–Sm2O3–Nd2O3–TiO2 ceramic system
This article presents the successful synthesis and characterization of a novel high dielectric constant ceramic system with near-zero temperature coefficient for microwave applications. The system, based on the 5CaO–10SrO–BaO–9Li2O–10Sm2O3–2Nd2O3–63TiO2 composition, was developed through a systematic modification of the non-stoichiometric CaO–Li2O–Sm2O3–Nd2O3–TiO2 (16:9:10:2:63) ceramic system using the conventional solid-state method. The initial focus of the study was on the effect of Sr substitution for Ca. By varying the Sr content from 1 to 11 mol% and sintering at temperatures ranging from 1120 to 1240 °C, it was observed that increasing Sr substitution led to a higher dielectric constant (εr), while the quality factor multiplied by the resonant frequency (Q × f) decreased, and the temperature coefficient of resonant frequency (τf) increased. Notably, at 1180 °C, the optimized composition with 11 mol% Sr substitution (CaO–SrO–Li2O–Sm2O3–Nd2O3–TiO2 = 5: 11: 9: 10: 2: 63) achieved a dielectric constant of 140 and an acceptable Q × f value of 1,100 GHz. However, the τf value was measured as 49.7 ppm/°C, highlighting the need for further optimization for practical applications. To address the issue of the relatively high τf, 1 mol% of BaO was partially substituted for SrO. This substitution resulted in the formation of a Ba-substituted CSBLSNT phase, which successfully improved the τf to near-zero while maintaining a moderate εr. The optimized composition, with a molar ratio of 5: 10: 1: 9: 10:2: 63 for CaO–SrO–BaO–Li2O–Sm2O3–Nd2O3–TiO2, was sintered at 1180 °C for 4 h. The resulting ceramic exhibited excellent dielectric properties: εr = 132, Q × f = 1,200 GHz, τf = 5.3 ppm/°C. The combination of a high dielectric constant and near-zero τf value makes this ceramic system highly promising for the fabrication of smaller, more thermally stable microwave components.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.