原位溶胶-凝胶工艺制备的 LaMnO3 薄膜电极中同时取代 Sr 和 Ca 的影响

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Shaikh Omar, S. B. Kulkarni
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引用次数: 0

摘要

利用先进的沉积技术合成金属氧化物薄膜在各种应用中都至关重要,尤其是在超级电容器中,薄膜已成为不可或缺的材料。先进的仪器在提高薄膜质量的同时,也增加了制造成本。显而易见,厚度较薄的薄膜具有较高的比电容,但稳定性却大打折扣。相反,增加厚度则会降低电容,从而形成一个具有挑战性的循环。在本研究中,我们通过溶胶-凝胶工艺制备了一种直接凝胶基薄膜,并研究了同时取代锶(Sr)和钙(Ca)的 LaMnO3 的电化学特性,这种取代材料被称为 La0.67Sr0.165Ca0.165MnO3 (LSCMO),合成浓度为 x = x1 + x2,其中 x = 0.33,x1 = x2 = 0.165。X 射线衍射(XRD)研究表明存在斜方体 LSMO 和正方体 LCMO 相。扫描电子显微镜(SEM)图像显示了不均匀的平面结构。傅立叶变换红外光谱分析显示,BO6 八面体的存在证实了包晶结构。凝胶基薄膜在 0 至 1.4 的电位窗口内进行了循环伏安(CV)分析,发现在 10 mV/s 时,比电容为 4474 mF/cm2,薄膜内部的电阻最小,这是用电化学阻抗光谱(EIS)计算得出的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Effect of simultaneous substitution of Sr and Ca in LaMnO3 thin-film electrode prepared via in situ sol–gel process

Effect of simultaneous substitution of Sr and Ca in LaMnO3 thin-film electrode prepared via in situ sol–gel process

The utilization of sophisticated deposition techniques for synthesizing metal oxide thin films across various applications is essential, particularly in supercapacitors where thin films have become indispensable. While advanced instruments enhance the quality of the film, they also escalate the manufacturing costs. It is evident that film with fine thickness exhibits high specific capacitance, but the stability is compromised. Conversely increasing the thickness reduces the capacitance, creating a challenging cycle. In this study, we prepare a direct gel-based film via sol–gel process and investigate the electrochemical properties of LaMnO3 by simultaneously substituting strontium (Sr) and calcium (Ca), and this substituted material was termed as La0.67Sr0.165Ca0.165MnO3 (LSCMO) synthesized at concentration of x = x1 + x2, where x = 0.33 and x1 = x2 = 0.165. X-ray diffraction (XRD) studies show the presence of rhombohedral LSMO and orthorhombic LCMO phases. The scanning electron microscopy (SEM) images showed a non-uniform planar structure. Fourier Transform Infrared spectroscopy analysis of the presence of BO6 Octahedra confirming the perovskite structure. The gel-based thin film was deployed to cyclic voltammetry (CV) analysis for potential window ranging from 0 to 1.4 and the specific capacitance was found to be 4474 mF/cm2 at 10 mV/s with the least resistance inside the film which was calculated using the electrochemical impedance spectroscopy (EIS).

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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