激子单晶和异质结构的外延生长:氧化物和氮化物

IF 4.1 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Prateeksha Rajpoot, Arpan Ghosh, Amandeep Kaur, Simran Arora, Mohamed Henini, Subhabrata Dhar, Sudeshna Chattopadhyay
{"title":"激子单晶和异质结构的外延生长:氧化物和氮化物","authors":"Prateeksha Rajpoot, Arpan Ghosh, Amandeep Kaur, Simran Arora, Mohamed Henini, Subhabrata Dhar, Sudeshna Chattopadhyay","doi":"10.1557/s43577-024-00760-3","DOIUrl":null,"url":null,"abstract":"<p>Excitons in a semiconductor are Coulomb interaction-bound pairs of excited electrons in the conduction band and holes in the valence band, which can either be free bosonic particles with well-defined integer spins, called the free excitons or bound at defect/impurity sites, called bound excitons. Theory predicts several fascinating collective phenomena emanating from excitons, such as Bose–Einstein condensation, high-temperature superconductivity, and strongly correlated excitonic insulator states. There are also proposals to utilize excitons for transferring and processing information. This new paradigm of electronics is expected to be more energy efficient and compatible with optical communication. However, exciton binding energy is an important factor to be considered in realizing the excitons at room temperature (RT). In this respect, certain nitride and oxide semiconductors, such as GaN, InN, and AlN and ZnO, TiO<sub>2</sub>, and Cu<sub>2</sub>O, are especially interesting as the excitonic binding energy in these materials is sufficiently high, which facilitates their survival above RT. By harnessing and controlling the excitonic behavior, researchers can engineer materials with specific functionalities, leading to innovations in materials science and device fabrication. Here, we review recent developments toward the understanding of excitons in certain nitride and oxide semiconductors as well as their heterostructures and nanostructures.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>","PeriodicalId":18828,"journal":{"name":"Mrs Bulletin","volume":"24 1","pages":""},"PeriodicalIF":4.1000,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Epitaxial growth of excitonic single crystals and heterostructures: Oxides and nitrides\",\"authors\":\"Prateeksha Rajpoot, Arpan Ghosh, Amandeep Kaur, Simran Arora, Mohamed Henini, Subhabrata Dhar, Sudeshna Chattopadhyay\",\"doi\":\"10.1557/s43577-024-00760-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Excitons in a semiconductor are Coulomb interaction-bound pairs of excited electrons in the conduction band and holes in the valence band, which can either be free bosonic particles with well-defined integer spins, called the free excitons or bound at defect/impurity sites, called bound excitons. Theory predicts several fascinating collective phenomena emanating from excitons, such as Bose–Einstein condensation, high-temperature superconductivity, and strongly correlated excitonic insulator states. There are also proposals to utilize excitons for transferring and processing information. This new paradigm of electronics is expected to be more energy efficient and compatible with optical communication. However, exciton binding energy is an important factor to be considered in realizing the excitons at room temperature (RT). In this respect, certain nitride and oxide semiconductors, such as GaN, InN, and AlN and ZnO, TiO<sub>2</sub>, and Cu<sub>2</sub>O, are especially interesting as the excitonic binding energy in these materials is sufficiently high, which facilitates their survival above RT. By harnessing and controlling the excitonic behavior, researchers can engineer materials with specific functionalities, leading to innovations in materials science and device fabrication. Here, we review recent developments toward the understanding of excitons in certain nitride and oxide semiconductors as well as their heterostructures and nanostructures.</p><h3 data-test=\\\"abstract-sub-heading\\\">Graphical abstract</h3>\",\"PeriodicalId\":18828,\"journal\":{\"name\":\"Mrs Bulletin\",\"volume\":\"24 1\",\"pages\":\"\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-08-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Mrs Bulletin\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1557/s43577-024-00760-3\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mrs Bulletin","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1557/s43577-024-00760-3","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

半导体中的激子是由导带中的受激电子和价带中的空穴组成的库仑相互作用束缚对,它们既可以是具有明确整数自旋的自由玻色粒子,称为自由激子,也可以是束缚在缺陷/杂质位点上的激子,称为束缚激子。理论预测了激子产生的几种迷人的集体现象,如玻色-爱因斯坦凝聚、高温超导和强相关激子绝缘体态。还有人建议利用激子来传输和处理信息。这一新的电子范例有望提高能效,并与光通信兼容。然而,要在室温(RT)下实现激子,激子结合能是一个需要考虑的重要因素。在这方面,某些氮化物和氧化物半导体,如氮化镓(GaN)、氮化铟(InN)、氮化铝(AlN)和氧化锌(ZnO)、二氧化钛(TiO2)和氧化铜(Cu2O),尤其令人感兴趣,因为这些材料中的激子结合能足够高,有利于它们在室温以上的环境中存活。通过利用和控制激子行为,研究人员可以设计出具有特定功能的材料,从而在材料科学和器件制造领域实现创新。在此,我们回顾了在了解某些氮化物和氧化物半导体中的激子及其异质结构和纳米结构方面的最新进展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Epitaxial growth of excitonic single crystals and heterostructures: Oxides and nitrides

Epitaxial growth of excitonic single crystals and heterostructures: Oxides and nitrides

Excitons in a semiconductor are Coulomb interaction-bound pairs of excited electrons in the conduction band and holes in the valence band, which can either be free bosonic particles with well-defined integer spins, called the free excitons or bound at defect/impurity sites, called bound excitons. Theory predicts several fascinating collective phenomena emanating from excitons, such as Bose–Einstein condensation, high-temperature superconductivity, and strongly correlated excitonic insulator states. There are also proposals to utilize excitons for transferring and processing information. This new paradigm of electronics is expected to be more energy efficient and compatible with optical communication. However, exciton binding energy is an important factor to be considered in realizing the excitons at room temperature (RT). In this respect, certain nitride and oxide semiconductors, such as GaN, InN, and AlN and ZnO, TiO2, and Cu2O, are especially interesting as the excitonic binding energy in these materials is sufficiently high, which facilitates their survival above RT. By harnessing and controlling the excitonic behavior, researchers can engineer materials with specific functionalities, leading to innovations in materials science and device fabrication. Here, we review recent developments toward the understanding of excitons in certain nitride and oxide semiconductors as well as their heterostructures and nanostructures.

Graphical abstract

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来源期刊
Mrs Bulletin
Mrs Bulletin 工程技术-材料科学:综合
CiteScore
7.40
自引率
2.00%
发文量
193
审稿时长
4-8 weeks
期刊介绍: MRS Bulletin is one of the most widely recognized and highly respected publications in advanced materials research. Each month, the Bulletin provides a comprehensive overview of a specific materials theme, along with industry and policy developments, and MRS and materials-community news and events. Written by leading experts, the overview articles are useful references for specialists, but are also presented at a level understandable to a broad scientific audience.
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