利用 GSST 氧化石墨烯混合薄膜结构实现单模光纤多级全光开关

S. Gan, J. Chew, Kok Bin Ng, L. Tey, Wu Yi Chong, B. T. Goh, C. Lai, Duk-Yong Choi, Steve Madden, H. Ahmad
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摘要

Ge2Sb2Se4Te1(GSST)在红外线波长范围内表现出前所未有的宽带透明度,在光纤通信波段的光子应用中已成为一种前景广阔的功能材料。在这项工作中,GSST 和氧化石墨烯(GO)被集成到光纤链路中,以实现全光纤非易失性多级光子存储器。GSST 和 GO(GSST-GO)双层混合结构夹在两根光纤套管之间,GO 作为局部热源,在光激发时启动 GSST 的相变。GSST-GO 涂层光纤的插入损耗低至 0.8 dB,最大读出对比度约为 32%,至少有五种不同的记忆状态。该装置的响应时间在 2.5 至 9.5 μs 之间。这项工作证明了在光纤平台上实现 GSST-GO 双层混合结构的概念,从而实现全光纤非易失性多位通道控制或数据存储。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single-mode fiber multi-level all-optical switching using GSST-graphene oxide hybrid thin film structure
Ge2Sb2Se4Te1 (GSST) exhibits unprecedented broadband transparency over the infrared wavelength range and has emerged as a promising functional material in photonic applications that operate in the optical fiber telecommunication wavelength band. In this work, GSST and graphene oxide (GO) are integrated into an optical fiber link to achieve all-fiber non-volatile multilevel photonic memory. The GSST and GO (GSST-GO) duo-layer hybrid structure is sandwiched between two optical fiber ferrules, where the GO acts as a localized heat source to initiate the phase transition of GSST upon optical excitation. The GSST-GO-coated fiber exhibits a low insertion loss of 0.8 dB and a maximum readout contrast of about 32%, with at least five distinguished memory states. The response time of the device is measured in the range between 2.5 and 9.5 μs. This work serves as a proof of concept on implementing the GSST-GO duo-layer hybrid structure in optical fiber platform to realize all-fiber non-volatile multi-bit channel control or data storage.
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