Yuna Kim, Byunglib Jung, Md Mobaidul Islam, Byeonggwan Kim, Jin Jang
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引用次数: 0
摘要
采用高 K 栅极绝缘体 (GI) 的低功耗电子器件越来越受到关注。本文研究了使用两种不同栅极绝缘体的低温多晶硅(LTPS)薄膜晶体管(TFT)的性能和稳定性:直接沉积在多晶硅上的喷雾热解氧化锆(ZAO)和二氧化硅/ZAO叠层栅极绝缘体。采用 SiO2/ZAO 叠层 GI 的 LTPS TFT 具有无滞后特性,阈值电压为 -0.2 V,场效应迁移率为 114.4 cm2 V-1 s-1,阈下摆幅为 0.10 V dec-1,在栅极电压为 ±6 V 时具有 7.3 × 108 的高导通/关断电流比。X 射线光电子能谱和高分辨率透射电子显微镜分析表明,由于 Zr 和 Al 扩散到多晶硅中,导致器件性能下降,只有 GI 采用了 ZAO。LTPS 上的薄二氧化硅阻挡了锆和铝的扩散,从而产生了具有高 k SiO2/ZAO 叠层 GI 的高性能、稳定的 p 型 LTPS TFT。最后,展示了使用具有 SiO2/ZAO 叠层 GI 的 LTPS TFT 的 7 级环形振荡器,在 6 V 电源电压下,振荡频率为 7.49 MHz,传播延迟为 9.54 ns,表明它适用于低功耗 TFT 电子产品和显示器。
Low‐Temperature Poly‐Si Thin‐Film Transistor with High‐k ZrAlOx Gate Insulator with SiO2 Blocking Layer
Low‐power electronic devices are of increasing interest with high‐k gate insulators (GI). Herein, the performance and stability of low‐temperature poly‐Si (LTPS) thin‐film transistors (TFTs) are investigated with two different GIs: spray pyrolyzed zirconiumaluminum oxide (ZAO) directly deposited on poly‐Si, and SiO2/ZAO stack GI. The LTPS TFT with SiO2/ZAO stack GI exhibits hysteresis free characteristics with a threshold voltage of −0.2 V, field‐effect mobility of 114.4 cm2 V−1 s−1, subthreshold swing of 0.10 V dec−1, and high on/off current ratio of 7.3 × 108, at a gate voltage sweeping ±6 V. The TFT exhibits very stable operation under negative bias temperature stress. The X‐ray photoelectron spectroscopy and high‐resolution transmission electron microscopy analyses demonstrate that the diffusion of Zr and Al into poly‐Si deteriorates device performance with ZAO only GI. A thin SiO2 on LTPS blocks the diffusion of Zr and Al, resulting the high‐performance and stable p‐type LTPS TFT with a high‐k SiO2/ZAO stack GI. Finally, a 7‐stage ring oscillator using LTPS TFTs with SiO2/ZAO stack GI is demonstrated, exhibiting an oscillation frequency of 7.49 MHz and a propagation delay of 9.54 ns at a supply voltage of 6 V, indicating its suitability for low‐power consumption TFT electronics and displays.