利用 iR 补偿控制钴纳米线的电沉积及其电子传输特性。

IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Stepan V Sotnichuk, Olga V Skryabina, Andrey G Shishkin, Igor A Golovchanskiy, Sergey V Bakurskiy, Vasily S Stolyarov, Kirill S Napolskii
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引用次数: 0

摘要

基于单根纳米线的超导混合结构是一种具有特殊传输特性的新型纳米级器件。控制纳米线结构对于理解此类复杂系统中产生的混合电子现象至关重要。在这项工作中,我们报告了一种利用 iR 补偿通过模板辅助电沉积制造钴纳米线的技术,该技术可以从根本上揭示纳米线生长的优先方向对沉积电位的依赖性。直径为 70 纳米的长粗粒钴纳米线已被应用到铌/钴/铌混合结构中。我们证明,采用不污染纳米线表面的电极制造技术,可以制造出具有低电阻界面的高质量器件。据报道,钴纳米线的低温电阻率为 4.94±0.83 µΩ cm,并具有其他传输特性。讨论了不同纳米线长度的 Nb/Co/Nb 系统不存在长程超导邻近效应的问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Controlled electrodeposition of cobalt nanowires usingiRcompensation and their electron transport properties.

Superconducting hybrid structures based on single nanowires are a new type of nanoscale devices with peculiar transport characteristics. Control over the nanowire structure is essential for understanding hybrid electronic phenomena arising in such complex systems. In this work, we report a technique for the fabrication of cobalt nanowires by template-assisted electrodeposition usingiRcompensation, which allows revealing the fundamental dependence of the preferred direction of nanowire growth on the deposition potential. Long coarse-grained cobalt nanowires with a diameter of 70 nm have been implemented into Nb/Co/Nb hybrid structures. We demonstrate that using electrode fabrication techniques that do not contaminate the surface of the nanowire leads to a high quality of devices with low-resistance interfaces. Low-temperature resistivity of 4.94 ± 0.83µΩ cm and other transport characteristics of Co nanowires are reported. The absence of long-range superconducting proximity effect for Nb/Co/Nb systems with different nanowire length is discussed.

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来源期刊
Nanotechnology
Nanotechnology 工程技术-材料科学:综合
CiteScore
7.10
自引率
5.70%
发文量
820
审稿时长
2.5 months
期刊介绍: The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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