基于云母衬底的高极化柔性 Hf0.5Zr0.5O2 非易失性存储器

IF 4.7 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials Pub Date : 2024-08-02 DOI:10.1021/acsaelm.4c01108

Xingpeng Liu, Chunshu Wei, Fabi Zhang, Ying Peng, Tangyou Sun, Yiming Peng, Huiping Tang, Junfeng Yang, Mingjian Ding, Chunsheng Jiang, Haiou Li

{"title":"基于云母衬底的高极化柔性 Hf0.5Zr0.5O2 非易失性存储器","authors":"Xingpeng Liu, Chunshu Wei, Fabi Zhang, Ying Peng, Tangyou Sun, Yiming Peng, Huiping Tang, Junfeng Yang, Mingjian Ding, Chunsheng Jiang, Haiou Li","doi":"10.1021/acsaelm.4c01108","DOIUrl":null,"url":null,"abstract":"The rapid development of flexible electronics industrialization has imposed more demanding requirements on flexible wearable devices. However, traditional memory storage on rigid substrates is no longer compatible with flexible substrates. The high polarization value of conventional chalcogenide ferroelectric films poses a problem, as it necessitates high film thickness, which hinders the development of device densification. At the same time, a flexible film achieved through etching sacrificial layers is no longer suitable for industrial production. In this study, we present a high quality and high polarization flexible 10 nm Hf0.5Zr0.5O2 (HZO) ferroelectric film grown on mica substrate by employing the atomic layer deposition (ALD) technique. The flexible HZO ferroelectric films exhibited an average roughness at the atomic level, Ra ∼ 0.931 nm. The structural properties of flexible HZO ferroelectric films were investigated. The results demonstrated a ferroelectric phase with a crystallographic spacing of 0.296 nm (111). The ferroelectricity of the flexible HZO ferroelectric films was investigated, demonstrating commendable polarization values: 2Pr ∼ 62.88 μC/cm2 and 2Ps ∼ 82.20 μC/cm2. A good ferroelectricity even under 9 mm of bending was exhibited for flexible HZO ferroelectric films. Our work introduces a new method for achieving ultrathin, flexible, nonvolatile memory.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"37 1","pages":""},"PeriodicalIF":4.7000,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Flexible Hf0.5Zr0.5O2 Nonvolatile Memory with High Polarization Based on Mica Substrate\",\"authors\":\"Xingpeng Liu, Chunshu Wei, Fabi Zhang, Ying Peng, Tangyou Sun, Yiming Peng, Huiping Tang, Junfeng Yang, Mingjian Ding, Chunsheng Jiang, Haiou Li\",\"doi\":\"10.1021/acsaelm.4c01108\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The rapid development of flexible electronics industrialization has imposed more demanding requirements on flexible wearable devices. However, traditional memory storage on rigid substrates is no longer compatible with flexible substrates. The high polarization value of conventional chalcogenide ferroelectric films poses a problem, as it necessitates high film thickness, which hinders the development of device densification. At the same time, a flexible film achieved through etching sacrificial layers is no longer suitable for industrial production. In this study, we present a high quality and high polarization flexible 10 nm Hf0.5Zr0.5O2 (HZO) ferroelectric film grown on mica substrate by employing the atomic layer deposition (ALD) technique. The flexible HZO ferroelectric films exhibited an average roughness at the atomic level, Ra ∼ 0.931 nm. The structural properties of flexible HZO ferroelectric films were investigated. The results demonstrated a ferroelectric phase with a crystallographic spacing of 0.296 nm (111). The ferroelectricity of the flexible HZO ferroelectric films was investigated, demonstrating commendable polarization values: 2Pr ∼ 62.88 μC/cm2 and 2Ps ∼ 82.20 μC/cm2. A good ferroelectricity even under 9 mm of bending was exhibited for flexible HZO ferroelectric films. Our work introduces a new method for achieving ultrathin, flexible, nonvolatile memory.\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":\"37 1\",\"pages\":\"\"},\"PeriodicalIF\":4.7000,\"publicationDate\":\"2024-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1021/acsaelm.4c01108\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsaelm.4c01108","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

柔性电子产业化的快速发展对柔性可穿戴设备提出了更高的要求。然而，刚性基板上的传统内存存储已不再兼容柔性基板。传统的钙化物铁电薄膜极化值较高，这就带来了一个问题，即需要较高的薄膜厚度，从而阻碍了设备致密化的发展。同时，通过蚀刻牺牲层实现的柔性薄膜已不再适合工业化生产。在本研究中，我们采用原子层沉积（ALD）技术在云母衬底上生长出了一种高质量、高极化柔性 10 nm Hf0.5Zr0.5O2 (HZO) 铁电薄膜。柔性 HZO 铁电薄膜的原子级平均粗糙度为 Ra ∼ 0.931 nm。研究了柔性 HZO 铁电薄膜的结构特性。结果表明，铁电相的晶体学间距为 0.296 nm (111)。对柔性 HZO 铁电薄膜的铁电性进行了研究，结果表明其极化值值得称赞：2Pr ∼ 62.88 μC/cm2，2Ps ∼ 82.20 μC/cm2。柔性 HZO 铁电薄膜即使在 9 mm 的弯曲条件下也表现出良好的铁电性。我们的工作为实现超薄、柔性、非易失性存储器引入了一种新方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

A Flexible Hf0.5Zr0.5O2 Nonvolatile Memory with High Polarization Based on Mica Substrate

查看原文本刊更多论文

A Flexible Hf0.5Zr0.5O2 Nonvolatile Memory with High Polarization Based on Mica Substrate

The rapid development of flexible electronics industrialization has imposed more demanding requirements on flexible wearable devices. However, traditional memory storage on rigid substrates is no longer compatible with flexible substrates. The high polarization value of conventional chalcogenide ferroelectric films poses a problem, as it necessitates high film thickness, which hinders the development of device densification. At the same time, a flexible film achieved through etching sacrificial layers is no longer suitable for industrial production. In this study, we present a high quality and high polarization flexible 10 nm Hf_0.5Zr_0.5O₂ (HZO) ferroelectric film grown on mica substrate by employing the atomic layer deposition (ALD) technique. The flexible HZO ferroelectric films exhibited an average roughness at the atomic level, R_a ∼ 0.931 nm. The structural properties of flexible HZO ferroelectric films were investigated. The results demonstrated a ferroelectric phase with a crystallographic spacing of 0.296 nm (111). The ferroelectricity of the flexible HZO ferroelectric films was investigated, demonstrating commendable polarization values: 2P_r ∼ 62.88 μC/cm² and 2P_s ∼ 82.20 μC/cm². A good ferroelectricity even under 9 mm of bending was exhibited for flexible HZO ferroelectric films. Our work introduces a new method for achieving ultrathin, flexible, nonvolatile memory.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ACS Applied Electronic Materials Multiple-

CiteScore

7.20

自引率

4.30%

发文量

567

期刊介绍： ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/Abstracted： Web of Science SCIE Scopus CAS INSPEC Portico