{"title":"8 英寸硅衬底上的高性能薄膜铌酸锂马赫-泽恩德调制器","authors":"Jingjie Zhou;Liming Lv;Zhanshi Yao;Shiyang Zhu;Yuxi Wang;Qingyu Cong;Zhaoyi Li;Zuowen Fan;Xianfeng Zeng;Ting Hu;Lianxi Jia","doi":"10.1109/LPT.2024.3434542","DOIUrl":null,"url":null,"abstract":"Lithium niobate modulators have primarily been fabricated on chip-level or 4/6-inch wafers. Here, thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulators (MZM) are demonstrated for the first time on an 8-inch silicon substrate. The fabricated LN modulator has an on-chip loss of less than 1 dB with a waveguide loss of lower than 0.5 dB/cm. The half-wave voltage- length product (V\n<inline-formula> <tex-math>$\\pi \\cdot $ </tex-math></inline-formula>\n L) is 3.12 V\n<inline-formula> <tex-math>$\\cdot $ </tex-math></inline-formula>\n cm in the C-band at a 0.5 cm modulation length, and the corresponding 3-dB bandwidth of the electro-optic response is beyond 67 GHz. All specifications are state-of-the-art. These results provide the basis for the industrialization of the TFLN platform with better balance between performance and cost.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3000,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Performance Thin-Film Lithium Niobate Mach–Zehnder Modulator on 8-inch Silicon Substrates\",\"authors\":\"Jingjie Zhou;Liming Lv;Zhanshi Yao;Shiyang Zhu;Yuxi Wang;Qingyu Cong;Zhaoyi Li;Zuowen Fan;Xianfeng Zeng;Ting Hu;Lianxi Jia\",\"doi\":\"10.1109/LPT.2024.3434542\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lithium niobate modulators have primarily been fabricated on chip-level or 4/6-inch wafers. Here, thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulators (MZM) are demonstrated for the first time on an 8-inch silicon substrate. The fabricated LN modulator has an on-chip loss of less than 1 dB with a waveguide loss of lower than 0.5 dB/cm. The half-wave voltage- length product (V\\n<inline-formula> <tex-math>$\\\\pi \\\\cdot $ </tex-math></inline-formula>\\n L) is 3.12 V\\n<inline-formula> <tex-math>$\\\\cdot $ </tex-math></inline-formula>\\n cm in the C-band at a 0.5 cm modulation length, and the corresponding 3-dB bandwidth of the electro-optic response is beyond 67 GHz. All specifications are state-of-the-art. These results provide the basis for the industrialization of the TFLN platform with better balance between performance and cost.\",\"PeriodicalId\":13065,\"journal\":{\"name\":\"IEEE Photonics Technology Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-07-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10613783/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10613783/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
High-Performance Thin-Film Lithium Niobate Mach–Zehnder Modulator on 8-inch Silicon Substrates
Lithium niobate modulators have primarily been fabricated on chip-level or 4/6-inch wafers. Here, thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulators (MZM) are demonstrated for the first time on an 8-inch silicon substrate. The fabricated LN modulator has an on-chip loss of less than 1 dB with a waveguide loss of lower than 0.5 dB/cm. The half-wave voltage- length product (V
$\pi \cdot $
L) is 3.12 V
$\cdot $
cm in the C-band at a 0.5 cm modulation length, and the corresponding 3-dB bandwidth of the electro-optic response is beyond 67 GHz. All specifications are state-of-the-art. These results provide the basis for the industrialization of the TFLN platform with better balance between performance and cost.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.