在 SiC 上使用 AlScN 的近 6-GHz Sezawa 模式声表面波谐振器

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Microelectromechanical Systems Pub Date : 2024-07-31 DOI:10.1109/JMEMS.2024.3430984

Xingyu Du;Nishant Sharma;Zichen Tang;Chloe Leblanc;Deep Jariwala;Roy H. Olsson

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引用次数: 0

摘要

在 4H 碳化硅（SiC）基板上采用氮化铝钪（AlScN）的声表面波（SAW）器件具有独特的高声速、低热阻、高压电响应、简化制造以及适合高温和恶劣环境操作等特性。本研究介绍了在碳化硅衬底上采用 AlScN 薄膜的高频 SAW 谐振器，利用了第二 SAW 模式（称为 Sezawa 模式）。该谐振器性能卓越，在 4.7 GHz 时的 K $^{m\athrm {2}}$ 值为 5.5%，在 4.3 GHz 时的最大 Bode-Q (Q $_{m\athrm {max}}$ ) 为 911，优于以前的 AlScN 声表面波器件。此外，波长为0.96~\mu $ m的声表面波谐振器达到了5.9 GHz频率，K $^{mathrm {2}}$ 为4.0%，Q $_{mathrm {max}}$ 为762。我们的研究强调了碳化硅基 AlScN 平台在先进射频应用方面的潜力。[2024-0075]

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Near 6-GHz Sezawa Mode Surface Acoustic Wave Resonators Using AlScN on SiC

Surface Acoustic Wave (SAW) devices featuring Aluminum Scandium Nitride (AlScN) on a 4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal resistance, substantial piezoelectric response, simplified fabrication, as well as suitability for high-temperature and harsh environment operation. This study presents high-frequency SAW resonators employing AlScN thin films on SiC substrates, utilizing the second SAW mode (referred to as the Sezawa mode). The resonators achieve remarkable performance, boasting a K

$^{\mathrm {2}}$

value of 5.5% at 4.7 GHz and a maximum Bode-Q (Q

$_{\mathrm {max}}$

) of 911 at 4.3 GHz, outperforming previous AlScN SAW devices. Additionally, a SAW resonator with a

$0.96~\mu $

m wavelength attains 5.9 GHz frequency with K

$^{\mathrm {2}}$

of 4.0% and Q

$_{\mathrm {max}}$

of 762. Our study underscores the potential of the AlScN on SiC platform for advanced radio-frequency applications. [2024-0075]

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来源期刊

Journal of Microelectromechanical Systems 工程技术-工程：电子与电气

CiteScore

6.20

自引率

7.40%

发文量

115

审稿时长

7.5 months

期刊介绍： The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.