从内扩散曲线推断正硅中氢物种的特性

IF 1.9 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-07-30 DOI:10.1002/pssa.202400360

Vladimir V. Voronkov, Robert Falster

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引用次数: 0

摘要

等离子体暴露的 n-Si 样品中氢的深度剖面图可以用一个简单的模型来拟合，即氢在负离子和中性离子（H- 和 H0）的传输过程中，伴随着氢-供体对（HD）的可逆形成和移动二聚体 H2A 的不可逆生成--特别是通过 H- 和 H0 的大量配对反应。与 p 型硅中复杂的氢行为（正离子和钝化硼的多个独立状态）相反，n 型硅中的情况似乎要简单得多，因为只有 H-、H0 和 HD 的单一状态就足以再现剖面。从剖面图中推导出的参数包括 H- 的扩散率、H- 和 H0 对氢传输的贡献相等时的特征电子浓度以及 H2A 二聚体的扩散率（在 120-225 ℃ 的可用温度范围内）。

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Properties of Hydrogen Species in n‐Type Silicon Deduced from In‐Diffusion Profiles

Reported depth profiles of hydrogen in plasma‐exposed n‐Si samples can be fitted with a simple model of hydrogen transport by negative and neutral species (H− and H0) accompanied by a reversible formation of hydrogen–donor pairs (HD) and by an irreversible production of mobile dimers H2A—in particular by a bulk pairing reaction of the H− and H0 species. Contrary to a complicated behavior of hydrogen found in p‐Si (with multiple independent states for positive ions and passivated boron), the situation in n‐Si appears to be much simpler as only single states for H−, H0, and HD are sufficient for profile reproduction. The parameters deduced from the profiles are the diffusivity of H−, the characteristic electron concentration marking equal contributions of H− and H0 into hydrogen transport, and the diffusivity of H2A dimers (in the available temperature range 120–225 °C).

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来源期刊

Physica Status Solidi A-applications and Materials Science 工程技术-材料科学：综合

CiteScore

3.70

自引率

5.00%

发文量

393

审稿时长

2 months

期刊介绍： The physica status solidi (pss) journal group is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Among the largest and most established international publications, the pss journals publish reviews, letters and original articles, as regular content as well as in special issues and topical sections.