Evan T. Salim, Suhair R. Shafeeq, Mohammed Jalal AbdulRazzaq, Makram A. Fakhri, Ahmad S. Azzahrani, Ali Basem, Forat H. Alsultany, Subash C. B. Gopinath
{"title":"脉冲激光沉积制备的多晶 T-Nb2O5 和 H-Nb2O5 薄膜:激光通量的影响","authors":"Evan T. Salim, Suhair R. Shafeeq, Mohammed Jalal AbdulRazzaq, Makram A. Fakhri, Ahmad S. Azzahrani, Ali Basem, Forat H. Alsultany, Subash C. B. Gopinath","doi":"10.1007/s11664-024-11322-3","DOIUrl":null,"url":null,"abstract":"<p>Polycrystalline structures of T-Nb<sub>2</sub>O<sub>5</sub> and a remarkable H-Nb<sub>2</sub>O<sub>5</sub> structure were successfully obtained in this work. This was achieved using a Nd:YAG laser in a pulsed laser deposition system at laser fluence values of 9.3, 13.4, 16.2, 21, and 25.2 J cm<sup>−2</sup>. Raman bands of the prepared films are shown and discussed. The optical bandgaps were estimated at 4.81 eV, 4.73 eV, 3.41 eV, 3.29 eV, and 3.21 eV. Photoluminescence (PL) analyses showed agreement with the estimated indirect bandgaps calculated from Tauc’s plot for each prepared film. The surface average roughness and root-mean-square (RMS) roughness were also determined and are discussed. The surface morphology as illustrated by field-emission scanning electron microscopy (FE-SEM) reveals the obvious impact of laser energy density on the prepared films. Energy-dispersive x-ray (EDX) analyses revealed the highest stoichiometry attributed to a laser fluence of 21 J cm<sup>−2</sup>.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polycrystalline T- and H-Nb2O5 Thin Films Prepared by Pulsed Laser Deposition: Impact of Laser Fluence\",\"authors\":\"Evan T. Salim, Suhair R. Shafeeq, Mohammed Jalal AbdulRazzaq, Makram A. Fakhri, Ahmad S. Azzahrani, Ali Basem, Forat H. Alsultany, Subash C. B. Gopinath\",\"doi\":\"10.1007/s11664-024-11322-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Polycrystalline structures of T-Nb<sub>2</sub>O<sub>5</sub> and a remarkable H-Nb<sub>2</sub>O<sub>5</sub> structure were successfully obtained in this work. This was achieved using a Nd:YAG laser in a pulsed laser deposition system at laser fluence values of 9.3, 13.4, 16.2, 21, and 25.2 J cm<sup>−2</sup>. Raman bands of the prepared films are shown and discussed. The optical bandgaps were estimated at 4.81 eV, 4.73 eV, 3.41 eV, 3.29 eV, and 3.21 eV. Photoluminescence (PL) analyses showed agreement with the estimated indirect bandgaps calculated from Tauc’s plot for each prepared film. The surface average roughness and root-mean-square (RMS) roughness were also determined and are discussed. The surface morphology as illustrated by field-emission scanning electron microscopy (FE-SEM) reveals the obvious impact of laser energy density on the prepared films. Energy-dispersive x-ray (EDX) analyses revealed the highest stoichiometry attributed to a laser fluence of 21 J cm<sup>−2</sup>.</p>\",\"PeriodicalId\":626,\"journal\":{\"name\":\"Journal of Electronic Materials\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electronic Materials\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s11664-024-11322-3\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11664-024-11322-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Polycrystalline T- and H-Nb2O5 Thin Films Prepared by Pulsed Laser Deposition: Impact of Laser Fluence
Polycrystalline structures of T-Nb2O5 and a remarkable H-Nb2O5 structure were successfully obtained in this work. This was achieved using a Nd:YAG laser in a pulsed laser deposition system at laser fluence values of 9.3, 13.4, 16.2, 21, and 25.2 J cm−2. Raman bands of the prepared films are shown and discussed. The optical bandgaps were estimated at 4.81 eV, 4.73 eV, 3.41 eV, 3.29 eV, and 3.21 eV. Photoluminescence (PL) analyses showed agreement with the estimated indirect bandgaps calculated from Tauc’s plot for each prepared film. The surface average roughness and root-mean-square (RMS) roughness were also determined and are discussed. The surface morphology as illustrated by field-emission scanning electron microscopy (FE-SEM) reveals the obvious impact of laser energy density on the prepared films. Energy-dispersive x-ray (EDX) analyses revealed the highest stoichiometry attributed to a laser fluence of 21 J cm−2.
期刊介绍:
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.