{"title":"基于微带耦合线带阻滤波器的双频功率放大器设计","authors":"","doi":"10.1016/j.aeue.2024.155450","DOIUrl":null,"url":null,"abstract":"<div><p>This article presents a simple and effective method for designing a dual-band power amplifier (PA). A microstrip coupled-line bandstop filter (BSF) is cascaded with a broadband PA, thus a notched band can be obtained in the wide operating band, realizing a dual-band characteristic of the PA. The simplified real frequency technique (SRFT) is employed to derive a broadband input matching networks covering the requisite frequency band. Appropriate fundamental impedance and second harmonic impedance matching are achieved at the ideal region of the Smith chart. For validation, an experimental prototype is fabricated and tested using a commercial GaN transistor Cree’s CGH40010F. The proposed dual-band PA is operated at 1.95–2.4 GHz and 2.65–3.1 GHz, with 61%–71% measured power-added efficiency (PAE) and 40.5–41.5 dBm of measured output power.</p></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":null,"pages":null},"PeriodicalIF":3.0000,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of dual-band power amplifier based on microstrip coupled-line bandstop filter\",\"authors\":\"\",\"doi\":\"10.1016/j.aeue.2024.155450\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This article presents a simple and effective method for designing a dual-band power amplifier (PA). A microstrip coupled-line bandstop filter (BSF) is cascaded with a broadband PA, thus a notched band can be obtained in the wide operating band, realizing a dual-band characteristic of the PA. The simplified real frequency technique (SRFT) is employed to derive a broadband input matching networks covering the requisite frequency band. Appropriate fundamental impedance and second harmonic impedance matching are achieved at the ideal region of the Smith chart. For validation, an experimental prototype is fabricated and tested using a commercial GaN transistor Cree’s CGH40010F. The proposed dual-band PA is operated at 1.95–2.4 GHz and 2.65–3.1 GHz, with 61%–71% measured power-added efficiency (PAE) and 40.5–41.5 dBm of measured output power.</p></div>\",\"PeriodicalId\":50844,\"journal\":{\"name\":\"Aeu-International Journal of Electronics and Communications\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.0000,\"publicationDate\":\"2024-07-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Aeu-International Journal of Electronics and Communications\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1434841124003364\",\"RegionNum\":3,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Aeu-International Journal of Electronics and Communications","FirstCategoryId":"94","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1434841124003364","RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Design of dual-band power amplifier based on microstrip coupled-line bandstop filter
This article presents a simple and effective method for designing a dual-band power amplifier (PA). A microstrip coupled-line bandstop filter (BSF) is cascaded with a broadband PA, thus a notched band can be obtained in the wide operating band, realizing a dual-band characteristic of the PA. The simplified real frequency technique (SRFT) is employed to derive a broadband input matching networks covering the requisite frequency band. Appropriate fundamental impedance and second harmonic impedance matching are achieved at the ideal region of the Smith chart. For validation, an experimental prototype is fabricated and tested using a commercial GaN transistor Cree’s CGH40010F. The proposed dual-band PA is operated at 1.95–2.4 GHz and 2.65–3.1 GHz, with 61%–71% measured power-added efficiency (PAE) and 40.5–41.5 dBm of measured output power.
期刊介绍:
AEÜ is an international scientific journal which publishes both original works and invited tutorials. The journal''s scope covers all aspects of theory and design of circuits, systems and devices for electronics, signal processing, and communication, including:
signal and system theory, digital signal processing
network theory and circuit design
information theory, communication theory and techniques, modulation, source and channel coding
switching theory and techniques, communication protocols
optical communications
microwave theory and techniques, radar, sonar
antennas, wave propagation
AEÜ publishes full papers and letters with very short turn around time but a high standard review process. Review cycles are typically finished within twelve weeks by application of modern electronic communication facilities.