{"title":"最先进的垂直隧道场效应晶体管:I60 为 2.73×10-⁴ A/μm 且 SS 低于 10 mV/dec 的镓硒/铟硒异质结源环隧道场效应晶体管","authors":"","doi":"10.1016/j.micrna.2024.207933","DOIUrl":null,"url":null,"abstract":"<div><p>This work introduces an innovative Source-All-Around Vertical Tunnel Field-Effect Transistor (SAA-VTFET) design based on III-V semiconductors. The unique combination of a GaSb/InSb heterojunction, a wider tunneling space, and an n<sup>+</sup> source pocket significantly enhances band-to-band tunneling (BTBT), leading to exceptional on-current levels. The device architecture utilizes InSb in the source pocket and channel, materials chosen for their properties that enable efficient carrier transport, ultimately boosting overall device performance. Through meticulous optimization, the SAA-VTFET achieves an I<sub>60</sub> (I<sub>ds</sub> at SS = 60mV/dec) of 2.73 × 10<sup>−4</sup> A/μm, an exceptionally low off-current of 1.7 × 10<sup>−17</sup> A/μm, a low threshold voltage of 0.16 V, an outstanding I<sub>ON</sub>/I<sub>OFF</sub> Ratio of 1.64 × 10<sup>13</sup>, and an attractive subthreshold swing (point SS of 4 mV/dec, average SS of 7 mV/dec). These remarkable achievements underscore the SAA-VTFET's potential to surpass conventional TFETs, paving the way for advanced low-power, high-speed electronics.</p></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Cutting-edge vertical tunnel FETs: GaSb/InSb heterojunction source-all-around tunnel FET with I60 of 2.73×10⁻⁴ A/μm and Sub-10 mV/dec SS\",\"authors\":\"\",\"doi\":\"10.1016/j.micrna.2024.207933\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This work introduces an innovative Source-All-Around Vertical Tunnel Field-Effect Transistor (SAA-VTFET) design based on III-V semiconductors. The unique combination of a GaSb/InSb heterojunction, a wider tunneling space, and an n<sup>+</sup> source pocket significantly enhances band-to-band tunneling (BTBT), leading to exceptional on-current levels. The device architecture utilizes InSb in the source pocket and channel, materials chosen for their properties that enable efficient carrier transport, ultimately boosting overall device performance. Through meticulous optimization, the SAA-VTFET achieves an I<sub>60</sub> (I<sub>ds</sub> at SS = 60mV/dec) of 2.73 × 10<sup>−4</sup> A/μm, an exceptionally low off-current of 1.7 × 10<sup>−17</sup> A/μm, a low threshold voltage of 0.16 V, an outstanding I<sub>ON</sub>/I<sub>OFF</sub> Ratio of 1.64 × 10<sup>13</sup>, and an attractive subthreshold swing (point SS of 4 mV/dec, average SS of 7 mV/dec). These remarkable achievements underscore the SAA-VTFET's potential to surpass conventional TFETs, paving the way for advanced low-power, high-speed electronics.</p></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-07-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773012324001821\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012324001821","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Cutting-edge vertical tunnel FETs: GaSb/InSb heterojunction source-all-around tunnel FET with I60 of 2.73×10⁻⁴ A/μm and Sub-10 mV/dec SS
This work introduces an innovative Source-All-Around Vertical Tunnel Field-Effect Transistor (SAA-VTFET) design based on III-V semiconductors. The unique combination of a GaSb/InSb heterojunction, a wider tunneling space, and an n+ source pocket significantly enhances band-to-band tunneling (BTBT), leading to exceptional on-current levels. The device architecture utilizes InSb in the source pocket and channel, materials chosen for their properties that enable efficient carrier transport, ultimately boosting overall device performance. Through meticulous optimization, the SAA-VTFET achieves an I60 (Ids at SS = 60mV/dec) of 2.73 × 10−4 A/μm, an exceptionally low off-current of 1.7 × 10−17 A/μm, a low threshold voltage of 0.16 V, an outstanding ION/IOFF Ratio of 1.64 × 1013, and an attractive subthreshold swing (point SS of 4 mV/dec, average SS of 7 mV/dec). These remarkable achievements underscore the SAA-VTFET's potential to surpass conventional TFETs, paving the way for advanced low-power, high-speed electronics.