服务于 X 波段/新兴 5G 通信的紧凑型宽双频方形介质谐振器天线

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-07-16 DOI:10.1016/j.mejo.2024.106328

Rasmita Sahu, Hrudananda Pradhan, Biswa Binayak Mangaraj, Debasis Mishra

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引用次数: 0

摘要

本文介绍了一种新型、紧凑、低成本的双频方形介质谐振器天线（SDRA）。一个尺寸为 10 × 10 × 3 mm3 的正方形介质（Alumina_96 pct）被安装在 RO4003 衬底顶部的共面地面上。天线通过矩形环槽采用孔径耦合方法进行激励。这种新设计的槽耦合 SDRA 具有宽双频特性，谐振频率分别为 8.65 GHz 和 11.08 GHz。所提出的紧凑型 SDRA 已制作完成。对制作的 SDRA 进行了测量，以评估其性能参数。测量结果与模拟结果相当吻合。在 8.65 GHz 的低频段测量到的增益和效率分别为 6.25 dBi 和 96 %。高频段的增益保持在 4.32 dBi，效率为 94.56%。稳定的远场测量结果验证了所建议的 SDRA 适用于 X 波段/新兴 5G 通信。

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Compact wide dual-band square dielectric resonator antenna to serve X-band/emerging 5G communication

This communication presents a new dual-band, compact, and low-cost square-shaped dielectric resonator antenna (SDRA). A square dielectric, Alumina_96 pct of compact dimension 10 $\times$ 10 $\times$ 3 mm³ is mounted on the coplanar ground on the top of the substrate RO4003. The antenna is excited by employing the aperture coupling method via a rectangular-ring slot. This newly designed slot-coupled SDRA exhibits wide dual-band characteristics, resonating at frequencies 8.65 GHz and 11.08 GHz. The proposed compact SDRA is fabricated. The fabricated SDRA is measured for evaluation of its performance parameters. The measured results are fairly matching with the simulation results. The gain and efficiency at 8.65 GHz in the lower band are measured as 6.25 dBi and 96 %, respectively. The gain of the upper band is maintained at 4.32 dBi with an efficiency of 94.56 %. Measured stable far-field outcomes validate the suggested SDRA suitable for X-Band/emerging 5G Communication.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.