Bo Li , Jinpei Lin , Linfei Gao , Zhengweng Ma , Huakai Yang , Zhihao Wu , Hsien-Chin Chiu , Hao-Chung Kuo , Chunfu Zhang , Zhihong Liu , Shuangwu Huang , Wei He , Xinke Liu
{"title":"具有双离子植入边缘终端的垂直 GaN 肖特基势垒二极管的电气性能和可靠性分析","authors":"Bo Li , Jinpei Lin , Linfei Gao , Zhengweng Ma , Huakai Yang , Zhihao Wu , Hsien-Chin Chiu , Hao-Chung Kuo , Chunfu Zhang , Zhihong Liu , Shuangwu Huang , Wei He , Xinke Liu","doi":"10.1016/j.chip.2024.100105","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (<em>V</em><sub>BR</sub>) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high <em>I</em><sub>on</sub>/<em>I</em><sub>off</sub> ratio of approximately 10<sup>9</sup>, and a low specific on-resistance of 1.93 mΩ cm<sup>2</sup>. When the ion implantation edge was terminated, the maximum <em>V</em><sub>BR</sub> of the devices reached 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm<sup>–2</sup> and showed excellent reliability during pulse stress testing.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100105"},"PeriodicalIF":0.0000,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000236/pdfft?md5=39e7a0c9e23864accd3ca2de9e3d77c6&pid=1-s2.0-S2709472324000236-main.pdf","citationCount":"0","resultStr":"{\"title\":\"Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination\",\"authors\":\"Bo Li , Jinpei Lin , Linfei Gao , Zhengweng Ma , Huakai Yang , Zhihao Wu , Hsien-Chin Chiu , Hao-Chung Kuo , Chunfu Zhang , Zhihong Liu , Shuangwu Huang , Wei He , Xinke Liu\",\"doi\":\"10.1016/j.chip.2024.100105\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (<em>V</em><sub>BR</sub>) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high <em>I</em><sub>on</sub>/<em>I</em><sub>off</sub> ratio of approximately 10<sup>9</sup>, and a low specific on-resistance of 1.93 mΩ cm<sup>2</sup>. When the ion implantation edge was terminated, the maximum <em>V</em><sub>BR</sub> of the devices reached 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm<sup>–2</sup> and showed excellent reliability during pulse stress testing.</p></div>\",\"PeriodicalId\":100244,\"journal\":{\"name\":\"Chip\",\"volume\":\"3 3\",\"pages\":\"Article 100105\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S2709472324000236/pdfft?md5=39e7a0c9e23864accd3ca2de9e3d77c6&pid=1-s2.0-S2709472324000236-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chip\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2709472324000236\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chip","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2709472324000236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination
In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (VBR) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high Ion/Ioff ratio of approximately 109, and a low specific on-resistance of 1.93 mΩ cm2. When the ion implantation edge was terminated, the maximum VBR of the devices reached 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm–2 and showed excellent reliability during pulse stress testing.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
