嵌入 TTSV 散热阵列的功率芯片的新型精确稳态热阻模型

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-07-25 DOI:10.1016/j.mejo.2024.106336

Linhong Lu , Xinghua Fu , Rui Hu , Fashun Yang , Jiexin Lin , Zhongchen Bai , Kui Ma

{"title":"嵌入 TTSV 散热阵列的功率芯片的新型精确稳态热阻模型","authors":"Linhong Lu , Xinghua Fu , Rui Hu , Fashun Yang , Jiexin Lin , Zhongchen Bai , Kui Ma","doi":"10.1016/j.mejo.2024.106336","DOIUrl":null,"url":null,"abstract":"<div>a novel oblique pyramid equivalent heat dissipation model is proposed for theoretically analyzing heat dissipation capacity of power chips with embedded TTSVs. Extra carefully researching correction of oblique thermal resistance, additional lateral thermal resistance, and thermal resistance of TSV insulation sleeve, the accurate theoretical thermal resistance model was established. Setting the FEA simulating results based on COMSOL Multiphysics as benchmark, heat dissipation effects of variation of radius of TTSV (r), thickness of the power chip (H0), and side length of the single cell (L0) have been numerically investigated. The maximum temperature relative error of the proposed model with FEA simulated results is not more than 0.2 %, 1 %, and 0.5 % for variation of r, H0, and L0, respectively. The proposed model has been theoretically and numerically proven to be effective and accurate.</div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel accurate steady-state thermal resistance model for power chips embedded in TTSVs heat dissipation array\",\"authors\":\"Linhong Lu , Xinghua Fu , Rui Hu , Fashun Yang , Jiexin Lin , Zhongchen Bai , Kui Ma\",\"doi\":\"10.1016/j.mejo.2024.106336\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>a novel oblique pyramid equivalent heat dissipation model is proposed for theoretically analyzing heat dissipation capacity of power chips with embedded TTSVs. Extra carefully researching correction of oblique thermal resistance, additional lateral thermal resistance, and thermal resistance of TSV insulation sleeve, the accurate theoretical thermal resistance model was established. Setting the FEA simulating results based on COMSOL Multiphysics as benchmark, heat dissipation effects of variation of radius of TTSV (r), thickness of the power chip (H0), and side length of the single cell (L0) have been numerically investigated. The maximum temperature relative error of the proposed model with FEA simulated results is not more than 0.2 %, 1 %, and 0.5 % for variation of r, H0, and L0, respectively. The proposed model has been theoretically and numerically proven to be effective and accurate.</div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-07-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1879239124000407\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124000407","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种新颖的斜金字塔等效散热模型，用于理论分析嵌入 TTSV 的功率芯片的散热能力。通过对斜向热阻、附加侧向热阻和 TSV 绝缘套管热阻的修正进行细致研究，建立了精确的理论热阻模型。以基于 COMSOL Multiphysics 的有限元分析仿真结果为基准，数值研究了 TTSV 半径（r）、功率芯片厚度（H0）和单芯片边长（L0）的变化对散热的影响。对于 r、H0 和 L0 的变化，所提出模型与有限元分析模拟结果的最大温度相对误差分别不超过 0.2%、1% 和 0.5%。从理论和数值上证明了所提出模型的有效性和准确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Novel accurate steady-state thermal resistance model for power chips embedded in TTSVs heat dissipation array

a novel oblique pyramid equivalent heat dissipation model is proposed for theoretically analyzing heat dissipation capacity of power chips with embedded TTSVs. Extra carefully researching correction of oblique thermal resistance, additional lateral thermal resistance, and thermal resistance of TSV insulation sleeve, the accurate theoretical thermal resistance model was established. Setting the FEA simulating results based on COMSOL Multiphysics as benchmark, heat dissipation effects of variation of radius of TTSV (r), thickness of the power chip (H₀), and side length of the single cell (L₀) have been numerically investigated. The maximum temperature relative error of the proposed model with FEA simulated results is not more than 0.2 %, 1 %, and 0.5 % for variation of r, H₀, and L₀, respectively. The proposed model has been theoretically and numerically proven to be effective and accurate.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.