{"title":"掺杂三元元素的 Mg2Si 金属间化合物力学性能的第一性原理计算","authors":"Hai-Wei Hu, Tinging Liu, Zhendong Li, Xu Wang, Yanbiao Wang, Shaorong Li","doi":"10.1515/ijmr-2023-0274","DOIUrl":null,"url":null,"abstract":"\n Site preference, structural stability and mechanical properties of Mg2Si doped by ternary elements were studied by first-principles calculation. Formation enthalpies show that light element impurity Al and rare earth elements Sc and Y tend to occupy the Mg site, while transition element Cu has a preference for the Si site. Shear modulus to bulk modulus ratio (G/B), Poisson’s ratio ν and Cauchy pressure show that the ductility of Mg2Si is improved for ternary element addition. The introduced parameter of ductility factor D indicates that the enhanced dislocation emission but suppressed micro-crack propagation is the key to enhancing ductility. Electronic structure indicates the brittleness is due to the strong covalent interaction between Mg-2p and Si-3p (Mg-3s and Si-3p/3s). While, with the incorporation of alloying elements, abundant electrons are injected into the matrix Mg2Si. Thereby, the covalent interaction is effectively suppressed and the ductility is improved.","PeriodicalId":510356,"journal":{"name":"International Journal of Materials Research","volume":" 11","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"First-principles calculations of the mechanical properties of Mg2Si intermetallic via ternary elements doping\",\"authors\":\"Hai-Wei Hu, Tinging Liu, Zhendong Li, Xu Wang, Yanbiao Wang, Shaorong Li\",\"doi\":\"10.1515/ijmr-2023-0274\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n Site preference, structural stability and mechanical properties of Mg2Si doped by ternary elements were studied by first-principles calculation. Formation enthalpies show that light element impurity Al and rare earth elements Sc and Y tend to occupy the Mg site, while transition element Cu has a preference for the Si site. Shear modulus to bulk modulus ratio (G/B), Poisson’s ratio ν and Cauchy pressure show that the ductility of Mg2Si is improved for ternary element addition. The introduced parameter of ductility factor D indicates that the enhanced dislocation emission but suppressed micro-crack propagation is the key to enhancing ductility. Electronic structure indicates the brittleness is due to the strong covalent interaction between Mg-2p and Si-3p (Mg-3s and Si-3p/3s). While, with the incorporation of alloying elements, abundant electrons are injected into the matrix Mg2Si. Thereby, the covalent interaction is effectively suppressed and the ductility is improved.\",\"PeriodicalId\":510356,\"journal\":{\"name\":\"International Journal of Materials Research\",\"volume\":\" 11\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-07-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Materials Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1515/ijmr-2023-0274\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Materials Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1515/ijmr-2023-0274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
通过第一原理计算研究了三元元素掺杂的 Mg2Si 的位点偏好、结构稳定性和力学性能。形成焓表明,轻元素杂质 Al 和稀土元素 Sc 和 Y 倾向于占据 Mg 位点,而过渡元素 Cu 则更倾向于占据 Si 位点。剪切模量与体积模量比(G/B)、泊松比ν和考奇压力表明,添加三元元素后,Mg2Si 的延展性得到改善。引入的延性因子参数 D 表明,增强位错发射但抑制微裂纹扩展是提高延性的关键。电子结构表明,脆性是由于 Mg-2p 和 Si-3p 之间的强共价作用(Mg-3s 和 Si-3p/3s)造成的。而随着合金元素的加入,大量电子被注入基体 Mg2Si。因此,共价作用被有效抑制,延展性得到改善。
First-principles calculations of the mechanical properties of Mg2Si intermetallic via ternary elements doping
Site preference, structural stability and mechanical properties of Mg2Si doped by ternary elements were studied by first-principles calculation. Formation enthalpies show that light element impurity Al and rare earth elements Sc and Y tend to occupy the Mg site, while transition element Cu has a preference for the Si site. Shear modulus to bulk modulus ratio (G/B), Poisson’s ratio ν and Cauchy pressure show that the ductility of Mg2Si is improved for ternary element addition. The introduced parameter of ductility factor D indicates that the enhanced dislocation emission but suppressed micro-crack propagation is the key to enhancing ductility. Electronic structure indicates the brittleness is due to the strong covalent interaction between Mg-2p and Si-3p (Mg-3s and Si-3p/3s). While, with the incorporation of alloying elements, abundant electrons are injected into the matrix Mg2Si. Thereby, the covalent interaction is effectively suppressed and the ductility is improved.