应用非轴对称磁场控制 KSTAR 中的阿尔芬特征模式

IF 4.3 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials Pub Date : 2024-07-17 DOI:10.1088/1741-4326/ad645e

Kimin Kim, Jisung Kang, Tongnyeol Rhee, Minho Kim, Junghee Kim

{"title":"应用非轴对称磁场控制 KSTAR 中的阿尔芬特征模式","authors":"Kimin Kim, Jisung Kang, Tongnyeol Rhee, Minho Kim, Junghee Kim","doi":"10.1088/1741-4326/ad645e","DOIUrl":null,"url":null,"abstract":"\n We report the experimental examination of non-axisymmetric (3D) magnetic field for control of Alfvén eigenmodes (AEs) in KSTAR. Application of the phase-sweeping n=1 3D magnetic field identifies the effective 3D field phase and threshold amplitude for suppression of the toroidal Alfvén eigenmodes (TAE). Such observations indicate at least two conditions of 3D field phase and amplitude should be satisfied for the AE suppression. The phase window of AE suppression is largely resonant and thereby overlapped with that of mode locking, while the threshold of mode locking is slightly higher than that of AE suppression, which implies narrow 3D configuration window for AE suppression. Numerical analyses on the AE stability and fast ion phase-space transport suggest that key mechanism of the AE suppression is the reduction of the AE drive through redistribution of fast ion phase-space distribution by strong resonant interactions of the fast ions with the 3D magnetic field.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":" 6","pages":""},"PeriodicalIF":4.3000,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Application of non-axisymmetric magnetic field for control of Alfvén eigenmodes in KSTAR\",\"authors\":\"Kimin Kim, Jisung Kang, Tongnyeol Rhee, Minho Kim, Junghee Kim\",\"doi\":\"10.1088/1741-4326/ad645e\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n We report the experimental examination of non-axisymmetric (3D) magnetic field for control of Alfvén eigenmodes (AEs) in KSTAR. Application of the phase-sweeping n=1 3D magnetic field identifies the effective 3D field phase and threshold amplitude for suppression of the toroidal Alfvén eigenmodes (TAE). Such observations indicate at least two conditions of 3D field phase and amplitude should be satisfied for the AE suppression. The phase window of AE suppression is largely resonant and thereby overlapped with that of mode locking, while the threshold of mode locking is slightly higher than that of AE suppression, which implies narrow 3D configuration window for AE suppression. Numerical analyses on the AE stability and fast ion phase-space transport suggest that key mechanism of the AE suppression is the reduction of the AE drive through redistribution of fast ion phase-space distribution by strong resonant interactions of the fast ions with the 3D magnetic field.\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":\" 6\",\"pages\":\"\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-07-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/1741-4326/ad645e\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1741-4326/ad645e","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了对非轴对称（3D）磁场用于控制 KSTAR 中的阿尔费文特征模（AEs）的实验研究。相位扫描 n=1 三维磁场的应用确定了有效的三维磁场相位和阈值振幅，以抑制环形阿尔夫文特征模（TAE）。这些观测结果表明，要抑制 AE，至少要满足三维磁场相位和振幅两个条件。AE 抑制的相位窗口在很大程度上与模式锁定的相位窗口重叠，而模式锁定的阈值略高于 AE 抑制的阈值，这意味着 AE 抑制的三维配置窗口较窄。对 AE 稳定性和快离子相空间传输的数值分析表明，AE 抑制的关键机制是通过快离子与三维磁场的强共振相互作用重新分配快离子相空间分布来减少 AE 驱动。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Application of non-axisymmetric magnetic field for control of Alfvén eigenmodes in KSTAR

We report the experimental examination of non-axisymmetric (3D) magnetic field for control of Alfvén eigenmodes (AEs) in KSTAR. Application of the phase-sweeping n=1 3D magnetic field identifies the effective 3D field phase and threshold amplitude for suppression of the toroidal Alfvén eigenmodes (TAE). Such observations indicate at least two conditions of 3D field phase and amplitude should be satisfied for the AE suppression. The phase window of AE suppression is largely resonant and thereby overlapped with that of mode locking, while the threshold of mode locking is slightly higher than that of AE suppression, which implies narrow 3D configuration window for AE suppression. Numerical analyses on the AE stability and fast ion phase-space transport suggest that key mechanism of the AE suppression is the reduction of the AE drive through redistribution of fast ion phase-space distribution by strong resonant interactions of the fast ions with the 3D magnetic field.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ACS Applied Electronic Materials Multiple-

CiteScore

7.20

自引率

4.30%

发文量

567

期刊介绍： ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/Abstracted： Web of Science SCIE Scopus CAS INSPEC Portico