{"title":"X 射线光电子能谱实用指南:使用氩离子束进行溅射深度剖析和清洁","authors":"Alexander G. Shard, M. Baker","doi":"10.1116/6.0003681","DOIUrl":null,"url":null,"abstract":"Ion beams are used in x-ray photoelectron spectroscopy (XPS) to clean samples and perform compositional sputter depth profiles. The purpose of this article is to compile good practice, recommendations, and useful information related to the use of argon ion sources for inexperienced users of XPS instrumentation. The most used type of ion source generates monoatomic argon ions at a range of energies from a fixed direction relative to the instrument. The angle and direction of the ion beam with respect to the surface are normally altered by manipulating the sample, and this may involve tilting the sample to change the angle of incidence or rotating the sample to change the azimuthal incidence angle. Atomic argon ion beams cause damage to the structure of the material surface, which may exhibit itself as a change in stoichiometry or topography as well as the implantation of argon atoms. Therefore, caution is required in the interpretation of XPS depth profiles. Gas cluster ion sources offer new possibilities and choices to XPS users. Gas cluster sources enable the sputtering of organic materials with high yield in comparison to inorganic materials and offer the potential for nearly damage-free depth profiling of delicate organic materials as well as low damage cleaning of inorganic materials. It may be possible to use argon clusters to reduce damage during the depth profiling of inorganic materials, but there is currently insufficient evidence to make any general recommendations.","PeriodicalId":509398,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Practical guides for x-ray photoelectron spectroscopy: Use of argon ion beams for sputter depth profiling and cleaning\",\"authors\":\"Alexander G. Shard, M. Baker\",\"doi\":\"10.1116/6.0003681\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ion beams are used in x-ray photoelectron spectroscopy (XPS) to clean samples and perform compositional sputter depth profiles. The purpose of this article is to compile good practice, recommendations, and useful information related to the use of argon ion sources for inexperienced users of XPS instrumentation. The most used type of ion source generates monoatomic argon ions at a range of energies from a fixed direction relative to the instrument. The angle and direction of the ion beam with respect to the surface are normally altered by manipulating the sample, and this may involve tilting the sample to change the angle of incidence or rotating the sample to change the azimuthal incidence angle. Atomic argon ion beams cause damage to the structure of the material surface, which may exhibit itself as a change in stoichiometry or topography as well as the implantation of argon atoms. Therefore, caution is required in the interpretation of XPS depth profiles. Gas cluster ion sources offer new possibilities and choices to XPS users. Gas cluster sources enable the sputtering of organic materials with high yield in comparison to inorganic materials and offer the potential for nearly damage-free depth profiling of delicate organic materials as well as low damage cleaning of inorganic materials. It may be possible to use argon clusters to reduce damage during the depth profiling of inorganic materials, but there is currently insufficient evidence to make any general recommendations.\",\"PeriodicalId\":509398,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology A\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-07-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology A\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0003681\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology A","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
离子束在 X 射线光电子能谱(XPS)中用于清洁样品和进行成分溅射深度剖面分析。本文旨在为 XPS 仪器的无经验用户汇编与使用氩离子源有关的良好做法、建议和有用信息。最常用的离子源类型是从相对于仪器的固定方向产生一系列能量的单原子氩离子。离子束相对于表面的角度和方向通常通过操作样品来改变,这可能包括倾斜样品以改变入射角,或旋转样品以改变方位入射角。原子氩离子束会对材料表面结构造成破坏,可能表现为化学计量或形貌的改变以及氩原子的植入。因此,在解释 XPS 深度剖面时需要谨慎。气簇离子源为 XPS 用户提供了新的可能性和选择。与无机材料相比,气簇离子源能以高产率溅射有机材料,并有可能对脆弱的有机材料进行几乎无损伤的深度剖面分析,以及对无机材料进行低损伤清洗。在对无机材料进行深度剖析时,使用氩气簇可能会减少损坏,但目前还没有足够的证据提出任何一般性建议。
Practical guides for x-ray photoelectron spectroscopy: Use of argon ion beams for sputter depth profiling and cleaning
Ion beams are used in x-ray photoelectron spectroscopy (XPS) to clean samples and perform compositional sputter depth profiles. The purpose of this article is to compile good practice, recommendations, and useful information related to the use of argon ion sources for inexperienced users of XPS instrumentation. The most used type of ion source generates monoatomic argon ions at a range of energies from a fixed direction relative to the instrument. The angle and direction of the ion beam with respect to the surface are normally altered by manipulating the sample, and this may involve tilting the sample to change the angle of incidence or rotating the sample to change the azimuthal incidence angle. Atomic argon ion beams cause damage to the structure of the material surface, which may exhibit itself as a change in stoichiometry or topography as well as the implantation of argon atoms. Therefore, caution is required in the interpretation of XPS depth profiles. Gas cluster ion sources offer new possibilities and choices to XPS users. Gas cluster sources enable the sputtering of organic materials with high yield in comparison to inorganic materials and offer the potential for nearly damage-free depth profiling of delicate organic materials as well as low damage cleaning of inorganic materials. It may be possible to use argon clusters to reduce damage during the depth profiling of inorganic materials, but there is currently insufficient evidence to make any general recommendations.