{"title":"低年级初学者通过输入和输出任务学习词汇:工作记忆的作用","authors":"M. Teng","doi":"10.14746/ssllt.36123","DOIUrl":null,"url":null,"abstract":"Working memory (WM) is essential to vocabulary learning. However, limited attention has been paid to young beginner learners’ vocabulary development under various task conditions from the perspective of WM. This study investigates how two types of WM – complex WM and phonological short-term memory – may influence two instructional approaches (i.e., input and output tasks) on picking up new words. 93 young learners studying English as a foreign language (EFL) participated in input and output tasks and four vocabulary assessments. These assessments functioned as a pretest, immediate posttest, and delayed posttest. The participants also took two WM tests: an operation span test for complex WM and a word repetition test for phonological short-term memory. The results demonstrated that: (1) both input and output tasks significantly influenced the learning and retention of new words, (2) complex WM did not substantially predict task effects on the learning and retention of new words, and (3) phonological WM had a notable impact on learning and retaining new words under the input and output task conditions. The findings emphasize the role of WM for EFL young learners’ vocabulary learning through tasks.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"55 18","pages":""},"PeriodicalIF":4.3000,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Young beginning learners’ vocabulary learning via input and output tasks: The role of working memory\",\"authors\":\"M. Teng\",\"doi\":\"10.14746/ssllt.36123\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Working memory (WM) is essential to vocabulary learning. However, limited attention has been paid to young beginner learners’ vocabulary development under various task conditions from the perspective of WM. This study investigates how two types of WM – complex WM and phonological short-term memory – may influence two instructional approaches (i.e., input and output tasks) on picking up new words. 93 young learners studying English as a foreign language (EFL) participated in input and output tasks and four vocabulary assessments. These assessments functioned as a pretest, immediate posttest, and delayed posttest. The participants also took two WM tests: an operation span test for complex WM and a word repetition test for phonological short-term memory. The results demonstrated that: (1) both input and output tasks significantly influenced the learning and retention of new words, (2) complex WM did not substantially predict task effects on the learning and retention of new words, and (3) phonological WM had a notable impact on learning and retaining new words under the input and output task conditions. The findings emphasize the role of WM for EFL young learners’ vocabulary learning through tasks.\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":\"55 18\",\"pages\":\"\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-07-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"98\",\"ListUrlMain\":\"https://doi.org/10.14746/ssllt.36123\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"98","ListUrlMain":"https://doi.org/10.14746/ssllt.36123","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Young beginning learners’ vocabulary learning via input and output tasks: The role of working memory
Working memory (WM) is essential to vocabulary learning. However, limited attention has been paid to young beginner learners’ vocabulary development under various task conditions from the perspective of WM. This study investigates how two types of WM – complex WM and phonological short-term memory – may influence two instructional approaches (i.e., input and output tasks) on picking up new words. 93 young learners studying English as a foreign language (EFL) participated in input and output tasks and four vocabulary assessments. These assessments functioned as a pretest, immediate posttest, and delayed posttest. The participants also took two WM tests: an operation span test for complex WM and a word repetition test for phonological short-term memory. The results demonstrated that: (1) both input and output tasks significantly influenced the learning and retention of new words, (2) complex WM did not substantially predict task effects on the learning and retention of new words, and (3) phonological WM had a notable impact on learning and retaining new words under the input and output task conditions. The findings emphasize the role of WM for EFL young learners’ vocabulary learning through tasks.
期刊介绍:
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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