40 纳米 CMOS 低频噪声的低温特性分析

IF 4.6 Q2 MATERIALS SCIENCE, BIOMATERIALS
Gerd Kiene;Sadık İlik;Luigi Mastrodomenico;Masoud Babaie;Fabio Sebastiano
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引用次数: 0

摘要

本文对 40 纳米 bulk-CMOS 晶体管在室温 (RT) 和低温 (4.2K) 下的低频噪声 (LFN) 进行了广泛表征。噪声是在各种偏置条件和几何形状下测量的,以全面了解该技术的低频噪声。虽然实时结果与文献和代工厂模型相符,但低温行为在许多方面存在偏差。这些偏差包括与晶体管类型和几何形状相关的 RT 幅值和偏置依赖性的变化,甚至还包括个别器件中常见的系统性洛伦兹特征。此外,我们还发现平均 LFN 与面积的比例及其变化在 RT 和 4.2K 之间相似,并首次系统地报告了低温比例。研究结果表明,由于在较低温度下没有观察到 LFN 持续下降,而白噪声却有所降低,因此 LFN 对低温下精密模拟设计的影响变得更加重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS
This paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and geometries to generate a comprehensive overview of LFN in this technology. While the RT results are in-line with the literature and the foundry models, the cryogenic behavior diverges in many aspects. These deviations include changes with respect to RT in magnitude and bias dependence that are conditional on transistor type and geometry, and even an additional systematic Lorentzian feature that is common among individual devices. Furthermore, we find the scaling of the average LFN with the area and its variability to be similar between RT and 4.2K, with the cryogenic scaling reported systematically for the first time. The findings suggest that, as no consistent decrease of LFN at lower temperatures is observed while the white noise is reduced, the impact of LFN for precision analog design at cryogenic temperatures gains a more predominant role.
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来源期刊
ACS Applied Bio Materials
ACS Applied Bio Materials Chemistry-Chemistry (all)
CiteScore
9.40
自引率
2.10%
发文量
464
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