La QDs 的合成与表征:阴离子和 H2O2 传感器

IF 3.5 Q2 CHEMISTRY, ANALYTICAL
Amit Sahoo and Achyuta N. Acharya
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引用次数: 0

摘要

由于阴离子和活性氧(ROS、H2O2)在生物和化学过程中发挥着重要作用,因此开发用于检测阴离子和活性氧的灵敏而准确的荧光传感器至关重要。本研究合成了半导体 La QDs。利用 EDS 技术确定合成的 La QDs 纯度为 100%。通过粉末 XRD 分析,观察到 La QDs 具有立方和六方两种晶格构型。利用 HRTEM 和 FESEM 数据对 La QDs 的形态进行了表征,发现它们是微小、球形、均匀的 QDs,直径在 2 到 6 nm 之间。通过研究合成的 La QDs 的传感特性,考察了它们的荧光特性,即随着阴离子浓度的增加而增加,随着[H2O2]的增加而减少。在 315 nm 和 440.5 nm 处的发射强度变化符合 Stern-Volmer 方程。研究了 La QDs 在 μM 范围内传感 H2O2 和阴离子的 LOD 和 LOQ。朗缪尔结合图和傅立叶变换红外光谱支持了 La QDs 在阴离子存在时发生表面官能化的概念。合成的 La QDs 具有约 3.26 eV 和 4.66 eV 的两个带隙能,是两种(二元)半导体的混合物。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Synthesis and characterization of La QDs: sensors for anions and H2O2†

Synthesis and characterization of La QDs: sensors for anions and H2O2†

Synthesis and characterization of La QDs: sensors for anions and H2O2†

The development of sensitive and accurate fluorescence sensors for the detection of anions and reactive oxygen species (ROS, H2O2) is essential as they play significant roles in biological and chemical processes. In this work, semiconductor La QDs were synthesized. The synthesized La QDs were determined to be pure with 100% La element using EDS technique. La QDs were observed in both cubic and hexagonal lattice configurations through powder XRD analysis. The morphology of the La QDs was characterized using HRTEM and FESEM data as tiny, spherical, homogenous QDs with a diameter ranging from 2 to 6 nm. The fluorescence characteristics of the synthesized La QDs were examined by studying their sensing properties that increased with an increase in anion concentration and decreased with an increase in [H2O2]. The variation in emission intensity at 315 nm and 440.5 nm satisfied the Stern–Volmer equation. The LOD and LOQ of H2O2 and anion sensing with La QDs were studied in the μM range. The Langmuir binding plots and FTIR spectra supported the concept that the surface functionalization of La QDs occurred in the presence of anions. With two band gap energies of about 3.26 eV and 4.66 eV, the synthesized La QDs are a mixture of two (binary) semiconductors.

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