三电纳米发电机的建模与数值模拟,通过考虑介电常数效应实现最佳性能

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Sahand Fardadidokht, Javad Yavandhasani
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引用次数: 0

摘要

三电纳米发电机(TENG)是一类流行的高效能量收集技术。大量研究表明,利用这些设备将机械运动转化为电能是可行的。在 TENG 的设计中,发电量及其优化是最重要的方面。然而,并非所有影响 TENG 性能的因素都得到了很好的理解。选择材料的主要标准是表面电荷密度、柔韧性和机械阻力。在某些时变电容器类型的 TENG 中,材料的介电常数可能是影响这些纳米发电机性能的重要因素。在这项研究中,我们利用仿真技术研究了增加介电常数对接触分离模型(CSTENG)中 TENG 性能的影响。我们发现,提高介电常数对厚结构非常有效;它能提高短路条件下传输的电荷量(QSC)、电流、最大功率和优点系数。然而,介电常数对薄型 CSTENG 性能的影响很小。因此,薄介质层可以放宽高 K 材料利用率效应。然后,我们分析了频率匹配的条件,并获得了实现最大功率的最佳条件。要实现最佳功率输出,薄型 CSTENG 需要使用低介电常数的材料。相反,利用高介电常数材料可以优化厚结构。基于这些发现,可以得出 TENG 的设计规则。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Modeling and Numerical Simulation of a Triboelectric Nanogenerator to Achieve Optimal Performance by Considering the Dielectric Constant Effect

Modeling and Numerical Simulation of a Triboelectric Nanogenerator to Achieve Optimal Performance by Considering the Dielectric Constant Effect

A popular class of efficient energy harvesting technologies is the triboelectric nanogenerator (TENG). There has been considerable research demonstrating the feasibility of converting mechanical motions into electrical energy by using these devices. In the design of TENGs, the power generated and its optimization are the most important aspects. However, not all factors affecting TENG performance are well understood. The main criteria for choosing materials is surface charge density, flexibility, and mechanical resistance. In some types of TENGs that are time-varying capacitors, the dielectric constant of the material can be a significant factor affecting the performance of these nanogenerators. In this research, using simulation, we investigate the effect of increasing the dielectric constant on the performance of the TENG in the contact-separation model (CSTENG). We find that increasing the dielectric constant is very effective in thick structures; it boosts the charge transferred under short-circuit conditions (QSC), current, maximum power, and figure of merit. However, there is little effect of the dielectric constant on thin CSTENG performance. Hence, the high-K material utilization effect is relaxed by thin dielectric layers. We then analyze the conditions of frequency matching and we obtain the optimal condition to achieve maximum power. To achieve optimal power output, thin CSTENGs require materials with a low dielectric constant. In contrast, thick structures can be optimized by utilizing high-K materials. Based on these findings, design rules for TENGs can be derived.

Graphical Abstract

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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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