基于稀土氧化物和多孔砷化镓的 MOS 电容器的形态、光学和电学特性

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Hayet Saghrouni, Lotfi Beji
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引用次数: 0

摘要

本文报告了在超真空条件下通过电子束沉积在多孔 p 型砷化镓上的氧化镝(Dy2O3)的结构、光学和电学特性。多孔砷化镓层是在氢氟酸(HF)和乙醇 C2H5OH 溶液中通过电化学阳极蚀刻掺杂程度很高的(100)p 型砷化镓衬底而产生的。根据原子力显微镜 (AFM) 图像确定了精心制作的 Dy2O3 层的表面形貌。原子力显微镜研究表明,Dy2O3 层的结构和粗糙度在很大程度上取决于多孔砷化镓的粗糙度和表面。经 X 射线衍射 (XRD) 分析证实,Dy2O3 是多晶体,呈立方晶体结构。利用椭偏仪和光致发光(PL)等多种技术分析了 Dy2O3/p 多孔砷化镓的光学特性,以获得有关表面和界面质量、带隙、光学常数、介电常数和厚度的信息。光致发光(PL)光谱在 835 纳米波长处显示出一个强烈的峰值,在 473 纳米波长和 540 纳米波长处分别显示出其他微弱的发射峰值。观测到的强光峰可直接归因于 p-GaAs 直接带隙中自由载流子的带间重组过程,而 473 nm 和 540 nm 处的弱发射峰则分别对应于 4F9/2-6H15/2 和 4F9/2-6H13/2 转变。在 350 nm 至 500 nm 的光谱区域内,Dy2O3 层的平均厚度被确定为 11 nm。通过电容-电压(C-V)和电导-电压(G/ω-V)测量,研究了(Co/Au)/Dy2O3/p-多孔 GaAs 金属氧化物半导体(MOS)电容器在 100-400 K 温度范围和 50 Hz 至 1 MHz 频率范围内的电学特性。实验表明,电容和电导都受到温度和频率的影响。此外,实验还研究了温度对界面态密度(Nss)的影响,结果表明,根据希尔-科尔曼法计算,温度升高会导致(Co/Au)/Dy2O3/p-多孔砷化镓(MOS)电容器的界面态密度(Nss)降低。经测定,(Co/Au)/Dy2O3/p-多孔砷化镓(MOS)电容器的 Nss 平均值约为 1012 eV-1 cm-2,使其适用于电子设备应用。较低的 Nss 值可归因于 Dy2O3 层融入多孔砷化镓后,Dy2O3/p-多孔砷化镓界面的局部缺陷微结构数量较少。在温度为 80 K 至 450 K、频率范围为 50 Hz 至 1 MHz 的条件下,使用阻抗光谱法研究了(Co/Au)/Dy2O3/多孔砷化镓(MOS)电容器的电导率。在低频条件下,交流电的电导率(σAC)几乎保持不变,而在高频条件下,电导率迅速增加,分别为 σDC 和 σAC。在所选温度范围内,σAC 的阿伦尼乌斯图显示出两个不同的斜率,分别对应于 35 MeV 和 10 MeV 两种活化能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Morphological, Optical, and Electrical Properties of a MOS Capacitor Based on Rare Earth Oxide and p-Porous GaAs

Morphological, Optical, and Electrical Properties of a MOS Capacitor Based on Rare Earth Oxide and p-Porous GaAs

This paper reports the structural, optical, and electrical properties of dysprosium oxide (Dy2O3) deposited by electron beam deposition under ultra-vacuum on porous p-type GaAs. A porous GaAs layer was produced by electrochemical anodic etching of a (100)-heavily doped p-type GaAs substrate in hydrofluoric acid (HF) and ethanol C2H5OH solution. The surface topography of the elaborated Dy2O3 layer was determined based on atomic force microscopy (AFM) images. AFM studies showed that the structure and roughness of the Dy2O3 layer were strongly dependent on the roughness and surface of porous GaAs. Dy2O3 is polycrystalline and exhibits a cubic crystalline structure, as confirmed by x-ray diffraction (XRD) analysis. The optical properties of Dy2O3/p-porous GaAs were analyzed using various techniques including ellipsometry and photoluminescence (PL) to obtain information on surface and interface quality, bandgap, optical constants, dielectric constant, and thickness. The photoluminescence (PL) spectra revealed an intense peak at 835 nm and additional weak emission peaks at 473 nm and 540 nm, respectively. The observed intense peak can be directly attributed to the interband recombination process of free carriers in the direct bandgap of p-GaAs, while the weak emission peaks at 473 nm and 540 nm correspond to 4F9/2-6H15/2 and 4F9/2-6H13/2 transitions, respectively. In the spectral region of 350 nm to 500 nm, the average thickness of the Dy2O3 layer was determined to be 11 nm. The electrical properties of the (Co/Au)/Dy2O3/p-porous GaAs metal–oxide–semiconductor (MOS) capacitor were investigated via capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements in the temperature range of 100–400 K and frequency range of 50 Hz to 1 MHz, respectively. The experiments demonstrated that both capacitance and conductance were influenced by temperature and frequency. Additionally, the effect of temperature on interface state density (Nss) was studied, which showed that an increase in temperature led to a decrease in the interface state density (Nss) of the (Co/Au)/Dy2O3/p-porous GaAs (MOS) capacitor, as calculated by the Hill–Coleman method. The mean values of Nss for the (Co/Au)/Dy2O3/p-porous GaAs (MOS) capacitor were determined to be approximately 1012 eV−1 cm−2, making it suitable for electronic device applications. The lower values of Nss can be attributed to a low amount of local defect microstructure at the Dy2O3/p-porous GaAs interface due to the incorporation of the Dy2O3 layer into the porous GaAs. The electrical conductivity of the (Co/Au)/Dy2O3/p-porous GaAs (MOS) capacitor was studied using impedance spectroscopy in the frequency range from 50 Hz to 1 MHz at temperatures ranging from 80 K to 450 K. At low frequencies, the conductivity of alternating current (σAC) remained nearly constant, whereas at high frequencies, it increased rapidly, representing σDC and σAC, respectively. The Arrhenius plot of σAC shows two distinct slopes corresponding to two activation energies, 35 MeV and 10 MeV, in the chosen temperature range.

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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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