{"title":"基于无电容浮动忆阻器仿真器的第二代电流传送器","authors":"Navnit Kumar, Manjeet Kumar, Neeta Pandey, Shahram Minaei","doi":"10.1002/cta.4175","DOIUrl":null,"url":null,"abstract":"This article offers a novel flux controlled floating memristor emulator based on second‐generation current conveyor (CCII). The floating memristor is designed using two CCIIs, one resistor, and one PMOS transistor. The presented memristor emulator does not need external capacitance. The proposed designed circuit exhibits pinch hysteresis loops in voltage–current plane up to 2 GHz frequency. The performance of the circuit under consideration is evaluated using 180 nm CMOS technology parameter by the SPICE simulator. The circuit requires a DC power supply of ±1.2 V and exhibits a power consumption of 0.766 mW. Furthermore, the resilience of the planned circuit is assessed by examining process corner fluctuation, supply voltage variation, temperature variation, and transistor size variations. In addition, a Schmitt trigger circuit and high order filters based on designed memristor are used to confirm the operation of the proposed design at high and low frequency, respectively.","PeriodicalId":13874,"journal":{"name":"International Journal of Circuit Theory and Applications","volume":null,"pages":null},"PeriodicalIF":1.8000,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Second generation current conveyor based capacitorless floating memristor emulator\",\"authors\":\"Navnit Kumar, Manjeet Kumar, Neeta Pandey, Shahram Minaei\",\"doi\":\"10.1002/cta.4175\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article offers a novel flux controlled floating memristor emulator based on second‐generation current conveyor (CCII). The floating memristor is designed using two CCIIs, one resistor, and one PMOS transistor. The presented memristor emulator does not need external capacitance. The proposed designed circuit exhibits pinch hysteresis loops in voltage–current plane up to 2 GHz frequency. The performance of the circuit under consideration is evaluated using 180 nm CMOS technology parameter by the SPICE simulator. The circuit requires a DC power supply of ±1.2 V and exhibits a power consumption of 0.766 mW. Furthermore, the resilience of the planned circuit is assessed by examining process corner fluctuation, supply voltage variation, temperature variation, and transistor size variations. In addition, a Schmitt trigger circuit and high order filters based on designed memristor are used to confirm the operation of the proposed design at high and low frequency, respectively.\",\"PeriodicalId\":13874,\"journal\":{\"name\":\"International Journal of Circuit Theory and Applications\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2024-07-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Circuit Theory and Applications\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1002/cta.4175\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Circuit Theory and Applications","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1002/cta.4175","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Second generation current conveyor based capacitorless floating memristor emulator
This article offers a novel flux controlled floating memristor emulator based on second‐generation current conveyor (CCII). The floating memristor is designed using two CCIIs, one resistor, and one PMOS transistor. The presented memristor emulator does not need external capacitance. The proposed designed circuit exhibits pinch hysteresis loops in voltage–current plane up to 2 GHz frequency. The performance of the circuit under consideration is evaluated using 180 nm CMOS technology parameter by the SPICE simulator. The circuit requires a DC power supply of ±1.2 V and exhibits a power consumption of 0.766 mW. Furthermore, the resilience of the planned circuit is assessed by examining process corner fluctuation, supply voltage variation, temperature variation, and transistor size variations. In addition, a Schmitt trigger circuit and high order filters based on designed memristor are used to confirm the operation of the proposed design at high and low frequency, respectively.
期刊介绍:
The scope of the Journal comprises all aspects of the theory and design of analog and digital circuits together with the application of the ideas and techniques of circuit theory in other fields of science and engineering. Examples of the areas covered include: Fundamental Circuit Theory together with its mathematical and computational aspects; Circuit modeling of devices; Synthesis and design of filters and active circuits; Neural networks; Nonlinear and chaotic circuits; Signal processing and VLSI; Distributed, switched and digital circuits; Power electronics; Solid state devices. Contributions to CAD and simulation are welcome.