二维晶体管感受挤压

IF 33.7 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Stuart Thomas
{"title":"二维晶体管感受挤压","authors":"Stuart Thomas","doi":"10.1038/s41928-024-01225-w","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7000,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"2D transistors feel the squeeze\",\"authors\":\"Stuart Thomas\",\"doi\":\"10.1038/s41928-024-01225-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":19064,\"journal\":{\"name\":\"Nature Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":33.7000,\"publicationDate\":\"2024-07-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nature Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.nature.com/articles/s41928-024-01225-w\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Electronics","FirstCategoryId":"5","ListUrlMain":"https://www.nature.com/articles/s41928-024-01225-w","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

随着晶体管器件沟道越来越小、静电控制越来越困难,硅互补金属氧化物半导体(CMOS)技术的扩展变得越来越具有挑战性。为了克服这些问题,研究人员探索了原子厚度沟道材料的潜力,如单层过渡金属二卤化二硫化钼(MoS2)。然而,具有商业相关尺寸和性能的单层 MoS2 晶体管的展示还很有限。台湾半导体制造公司、国立阳明交通大学和台湾国家应用研究实验室的研究人员创造出了背栅晶体管,这种晶体管具有锑基金属触点,并能在后端加工的热要求范围内制造。沟道长度为 19 nm、接触长度为 12 nm 的晶体管在漏极电压为 1 V 时的导通电流约为 1,100 μA μm-1。将沟道长度放大到 12 nm 时,导通电流有所改善,而阈下摆动或漏极诱导的势垒降低降幅极小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
2D transistors feel the squeeze
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来源期刊
Nature Electronics
Nature Electronics Engineering-Electrical and Electronic Engineering
CiteScore
47.50
自引率
2.30%
发文量
159
期刊介绍: Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research. The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society. Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting. In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.
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