磁控溅射法优化 Ti2O3 薄膜并研究其光电性能

IF 1.8 4区 材料科学 Q2 MATERIALS SCIENCE, CERAMICS
Wenwei Wang, Jialiang He, Yingbang Yao
{"title":"磁控溅射法优化 Ti2O3 薄膜并研究其光电性能","authors":"Wenwei Wang, Jialiang He, Yingbang Yao","doi":"10.1111/ijac.14857","DOIUrl":null,"url":null,"abstract":"In this study, Ti<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films were successfully produced using magnetron sputtering. Through orthogonal gradient experiments, the impact of substrate temperature, sputtering vacuum, RF power, and sputtering duration on surface morphology, roughness, physical structure, and resistivity was investigated. Various analytical techniques were employed, including AFM and SEM for surface morphology observation, XRD and Raman for qualitative physical structure analysis, XPS for elemental valence examination, and the four‐probe method for resistivity measurements. The study identified optimal growth conditions for Ti<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films, demonstrating a low resistivity of 2.66 × 10<jats:sup>−3</jats:sup> Ω cm under the following conditions: RF power of 200 W, sputtering vacuum of .6 Pa, substrate temperature of 600°C, and sputtering duration of 60 min. Additionally, the sensor arrays were efficiently fabricated using the Lift‐off method to evaluate the photoelectric performance of the films. A light responsiveness of approximately 6 µA/W was observed in the device when illuminated with 950 nm light for 10 s. This finding carries important implications for the use of Ti<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films in future photoelectric devices.","PeriodicalId":13903,"journal":{"name":"International Journal of Applied Ceramic Technology","volume":"9 1","pages":""},"PeriodicalIF":1.8000,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimization of Ti2O3 thin films by magnetron sputtering and study of their photoelectric performance\",\"authors\":\"Wenwei Wang, Jialiang He, Yingbang Yao\",\"doi\":\"10.1111/ijac.14857\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, Ti<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films were successfully produced using magnetron sputtering. Through orthogonal gradient experiments, the impact of substrate temperature, sputtering vacuum, RF power, and sputtering duration on surface morphology, roughness, physical structure, and resistivity was investigated. Various analytical techniques were employed, including AFM and SEM for surface morphology observation, XRD and Raman for qualitative physical structure analysis, XPS for elemental valence examination, and the four‐probe method for resistivity measurements. The study identified optimal growth conditions for Ti<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films, demonstrating a low resistivity of 2.66 × 10<jats:sup>−3</jats:sup> Ω cm under the following conditions: RF power of 200 W, sputtering vacuum of .6 Pa, substrate temperature of 600°C, and sputtering duration of 60 min. Additionally, the sensor arrays were efficiently fabricated using the Lift‐off method to evaluate the photoelectric performance of the films. A light responsiveness of approximately 6 µA/W was observed in the device when illuminated with 950 nm light for 10 s. This finding carries important implications for the use of Ti<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films in future photoelectric devices.\",\"PeriodicalId\":13903,\"journal\":{\"name\":\"International Journal of Applied Ceramic Technology\",\"volume\":\"9 1\",\"pages\":\"\"},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2024-07-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Applied Ceramic Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1111/ijac.14857\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, CERAMICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Applied Ceramic Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1111/ijac.14857","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}
引用次数: 0

摘要

本研究利用磁控溅射技术成功制备了 Ti2O3 薄膜。通过正交梯度实验,研究了基片温度、溅射真空度、射频功率和溅射持续时间对表面形貌、粗糙度、物理结构和电阻率的影响。研究采用了多种分析技术,包括用于观察表面形貌的原子力显微镜(AFM)和扫描电子显微镜(SEM)、用于物理结构定性分析的 XRD 和拉曼光谱、用于元素价态检测的 XPS 以及用于电阻率测量的四探针法。研究确定了 Ti2O3 薄膜的最佳生长条件,在以下条件下,电阻率低至 2.66 × 10-3 Ω cm:射频功率为 200 W,溅射真空度为 .6 Pa,基片温度为 600°C,溅射持续时间为 60 分钟。此外,为了评估薄膜的光电性能,我们还使用 Lift-off 方法有效地制作了传感器阵列。当用 950 纳米的光照射 10 秒钟时,该装置的光响应速度约为 6 µA/W。这一发现对未来在光电装置中使用 Ti2O3 薄膜具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimization of Ti2O3 thin films by magnetron sputtering and study of their photoelectric performance
In this study, Ti2O3 thin films were successfully produced using magnetron sputtering. Through orthogonal gradient experiments, the impact of substrate temperature, sputtering vacuum, RF power, and sputtering duration on surface morphology, roughness, physical structure, and resistivity was investigated. Various analytical techniques were employed, including AFM and SEM for surface morphology observation, XRD and Raman for qualitative physical structure analysis, XPS for elemental valence examination, and the four‐probe method for resistivity measurements. The study identified optimal growth conditions for Ti2O3 films, demonstrating a low resistivity of 2.66 × 10−3 Ω cm under the following conditions: RF power of 200 W, sputtering vacuum of .6 Pa, substrate temperature of 600°C, and sputtering duration of 60 min. Additionally, the sensor arrays were efficiently fabricated using the Lift‐off method to evaluate the photoelectric performance of the films. A light responsiveness of approximately 6 µA/W was observed in the device when illuminated with 950 nm light for 10 s. This finding carries important implications for the use of Ti2O3 thin films in future photoelectric devices.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
International Journal of Applied Ceramic Technology
International Journal of Applied Ceramic Technology 工程技术-材料科学:硅酸盐
CiteScore
3.90
自引率
9.50%
发文量
280
审稿时长
4.5 months
期刊介绍: The International Journal of Applied Ceramic Technology publishes cutting edge applied research and development work focused on commercialization of engineered ceramics, products and processes. The publication also explores the barriers to commercialization, design and testing, environmental health issues, international standardization activities, databases, and cost models. Designed to get high quality information to end-users quickly, the peer process is led by an editorial board of experts from industry, government, and universities. Each issue focuses on a high-interest, high-impact topic plus includes a range of papers detailing applications of ceramics. Papers on all aspects of applied ceramics are welcome including those in the following areas: Nanotechnology applications; Ceramic Armor; Ceramic and Technology for Energy Applications (e.g., Fuel Cells, Batteries, Solar, Thermoelectric, and HT Superconductors); Ceramic Matrix Composites; Functional Materials; Thermal and Environmental Barrier Coatings; Bioceramic Applications; Green Manufacturing; Ceramic Processing; Glass Technology; Fiber optics; Ceramics in Environmental Applications; Ceramics in Electronic, Photonic and Magnetic Applications;
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信