{"title":"关于 Mg(0001)/AlB2(0001) 成核界面的电子结构、粘附强度和界面稳定性的第一性原理计算","authors":"Bo Li, Yonghua Duan, Mengnie Li, Lishi Ma, Shanju Zheng, Mingjun Peng","doi":"10.1007/s40195-024-01737-6","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, Mg(0001)/AlB<sub>2</sub>(0001) interfaces with various terminations and stacking orders were constructed, and the atomic and electronic structures and adhesion work (<i>W</i><sub>ad</sub>) of the interface were investigated using the first-principles calculations. Notably, during the geometry optimization process, the B-mid-top (B-MT) Mg(0001)/AlB<sub>2</sub>(0001) interface exhibits the most significant interface changes and manifests the least stability. Horizontal movement of Mg atoms in the first layer of the Mg surface slab, along the normal direction, results in a structure akin to the structurally optimized hexagonal close-packed (HCP) interface. The B-HCP interface demonstrates the highest stability, the largest ideal <i>W</i><sub>ad</sub>, and the smallest interface distance. The interface enhances the binding strength of the Mg-side sub-interface, but diminishes the binding strength of the AlB<sub>2</sub>-side sub-interface. Furthermore, Mg atoms can form metallic/covalent mixed bonds with Al atoms on the Al-terminal AlB<sub>2</sub> surface and form ionic bonds with B atoms on the B-terminal AlB<sub>2</sub> surface. Mg(0001)/AlB<sub>2</sub>(0001) interface has good bonding properties. This research provides strong theoretical support for an in-depth understanding of Mg/AlB<sub>2</sub> interface characteristics.</p></div>","PeriodicalId":457,"journal":{"name":"Acta Metallurgica Sinica-English Letters","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"First-Principles Calculations on Electronic Structure, Adhesion Strength, and Interfacial Stability of Mg(0001)/AlB2(0001) Nucleation Interface\",\"authors\":\"Bo Li, Yonghua Duan, Mengnie Li, Lishi Ma, Shanju Zheng, Mingjun Peng\",\"doi\":\"10.1007/s40195-024-01737-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this work, Mg(0001)/AlB<sub>2</sub>(0001) interfaces with various terminations and stacking orders were constructed, and the atomic and electronic structures and adhesion work (<i>W</i><sub>ad</sub>) of the interface were investigated using the first-principles calculations. Notably, during the geometry optimization process, the B-mid-top (B-MT) Mg(0001)/AlB<sub>2</sub>(0001) interface exhibits the most significant interface changes and manifests the least stability. Horizontal movement of Mg atoms in the first layer of the Mg surface slab, along the normal direction, results in a structure akin to the structurally optimized hexagonal close-packed (HCP) interface. The B-HCP interface demonstrates the highest stability, the largest ideal <i>W</i><sub>ad</sub>, and the smallest interface distance. The interface enhances the binding strength of the Mg-side sub-interface, but diminishes the binding strength of the AlB<sub>2</sub>-side sub-interface. Furthermore, Mg atoms can form metallic/covalent mixed bonds with Al atoms on the Al-terminal AlB<sub>2</sub> surface and form ionic bonds with B atoms on the B-terminal AlB<sub>2</sub> surface. Mg(0001)/AlB<sub>2</sub>(0001) interface has good bonding properties. This research provides strong theoretical support for an in-depth understanding of Mg/AlB<sub>2</sub> interface characteristics.</p></div>\",\"PeriodicalId\":457,\"journal\":{\"name\":\"Acta Metallurgica Sinica-English Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-07-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Acta Metallurgica Sinica-English Letters\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s40195-024-01737-6\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"METALLURGY & METALLURGICAL ENGINEERING\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Acta Metallurgica Sinica-English Letters","FirstCategoryId":"1","ListUrlMain":"https://link.springer.com/article/10.1007/s40195-024-01737-6","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"METALLURGY & METALLURGICAL ENGINEERING","Score":null,"Total":0}
引用次数: 0
摘要
这项研究构建了具有不同端点和堆积顺序的 Mg(0001)/AlB2(0001) 界面,并利用第一性原理计算研究了界面的原子结构、电子结构和粘附功(Wad)。值得注意的是,在几何优化过程中,B-中顶(B-MT)Mg(0001)/AlB2(0001)界面的界面变化最为显著,稳定性最低。镁表面板坯第一层中的镁原子沿法线方向水平移动,形成了类似于结构优化后的六方紧密堆积(HCP)界面的结构。B-HCP 界面具有最高的稳定性、最大的理想瓦德和最小的界面距离。该界面增强了镁侧子界面的结合强度,但削弱了 AlB2 侧子界面的结合强度。此外,镁原子可与 Al 端 AlB2 表面的 Al 原子形成金属/共价混合键,并与 B 端 AlB2 表面的 B 原子形成离子键。Mg(0001)/AlB2(0001)界面具有良好的成键性能。这项研究为深入了解 Mg/AlB2 界面特性提供了有力的理论支持。
First-Principles Calculations on Electronic Structure, Adhesion Strength, and Interfacial Stability of Mg(0001)/AlB2(0001) Nucleation Interface
In this work, Mg(0001)/AlB2(0001) interfaces with various terminations and stacking orders were constructed, and the atomic and electronic structures and adhesion work (Wad) of the interface were investigated using the first-principles calculations. Notably, during the geometry optimization process, the B-mid-top (B-MT) Mg(0001)/AlB2(0001) interface exhibits the most significant interface changes and manifests the least stability. Horizontal movement of Mg atoms in the first layer of the Mg surface slab, along the normal direction, results in a structure akin to the structurally optimized hexagonal close-packed (HCP) interface. The B-HCP interface demonstrates the highest stability, the largest ideal Wad, and the smallest interface distance. The interface enhances the binding strength of the Mg-side sub-interface, but diminishes the binding strength of the AlB2-side sub-interface. Furthermore, Mg atoms can form metallic/covalent mixed bonds with Al atoms on the Al-terminal AlB2 surface and form ionic bonds with B atoms on the B-terminal AlB2 surface. Mg(0001)/AlB2(0001) interface has good bonding properties. This research provides strong theoretical support for an in-depth understanding of Mg/AlB2 interface characteristics.
期刊介绍:
This international journal presents compact reports of significant, original and timely research reflecting progress in metallurgy, materials science and engineering, including materials physics, physical metallurgy, and process metallurgy.