Stabilizing Schottky junction in conjugated polymer diodes enables long-term reliable radio-frequency energy harvesting on plastic

Due to their inherent flexibility, solution-processable conjugated polymers are increasingly being considered for the cost-effective production of thin-film semiconductor devices used in Internet of Everything (IoE) applications. With considerable improvements in charge carrier mobilities, the final challenge impeding the commercialization of conjugated polymers may be improving their environmental and electrical stabilities. Recent studies have improved the stability of computing devices (i.e., transistors) by eliminating interface traps and water molecules within conjugated polymers. However, the stability issue of Schottky diodes, which play a crucial role in configuring thin-film IoE devices used in wireless communication and energy harvesting, has been largely overlooked. This study reveals that aluminum, which is commonly used as a cathode metal in polymer Schottky diodes, creates a nonstoichiometric effect when deposited on conjugated polymers, thereby leading to the formation of charge traps over time, which reduces the rectification ratio of the Schottky diodes and induces a significant bias stress effect during operation. To address this issue, we introduce a zinc-oxide sacrificial interlayer between the conjugated polymer and cathode. This interlayer effectively eliminates the penetrated Al metal or ionized Al-induced nonstoichiometric effect without reducing the charge injection efficiency, achieving exceptional environmental and operational stability. The printed polymer Schottky diodes demonstrate consistent rectifying operation at 13.56 MHz for several months with negligible changes in electrical characteristics.