掺硼和掺氮四面体无定形碳的电化学性能

IF 5.5 3区 材料科学 Q1 ELECTROCHEMISTRY
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引用次数: 0

摘要

四面体无定形碳(ta-C)是目前用途最广的碳电极材料之一。掺入各种掺杂剂后,ta-C 的结构、电化学、物理和化学性质都会发生变化,可根据不同应用进行调整。此外,掺杂的ta-C(ta-C:X)可沉积在多种不同的基底材料(金属、陶瓷、塑料)和几何形状(微电极到超大面积连续涂层线)上。在这项工作中,我们比较了通过滤波激光弧(一种物理气相沉积工艺)制备的掺有不同水平氮(ta-C:N)、掺有硼(ta-C:B)以及同时掺有硼和氮(ta-C:B:N)的 ta-C 电极的电化学性能。ta-C:N 薄膜是在沉积室中通过 N2 气体掺杂的,而 ta-C:B 和 ta-C:B:N 则是通过在合成薄膜所用的石墨阴极中加入掺杂剂沉积的。通过循环伏安法(CV)和电化学阻抗光谱法(EIS)对镀在硅(Si)和钛(Ti)基底上的薄膜进行了比较。使用 Fe(CN)63-/4- 和 Ru(NH3)63+/2+ 氧化还原体系研究了每种 ta-C:X 薄膜的电化学特性。掺硼金刚石(BDD)、玻璃碳(GC)和未掺杂的 ta-C 被用作对照电极。研究发现,所有 ta-C:X 薄膜都具有适当的电子转移率、较宽的工作电位窗口(在氯化钾中约为 3.7 V)和较低的电容。具体来说,与 BDD 和 GC 相比,硼化薄膜能产生较高的异质速率常数 (k)、最低的双层电容 (Cdl),以及较小的 RC 时间常数。在未掺杂和氮化的 ta-C 薄膜中加入硼,可在沉积过程中稳定 sp3 键内容的形成,从而使薄膜表面更光滑,硬度更高。研究表明,尽管 sp3 含量增加,但掺硼薄膜的电化学性能并没有受到影响。由于其多功能性,ta-C 成为了一种具有广泛可调特性的材料,可用于各种应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrochemical performance of boron- and nitrogen-doped tetrahedral amorphous carbon

Tetrahedral amorphous carbon (ta-C) is one of the most versatile carbon electrode materials available. The incorporation of various dopants in ta-C alters the structural, electrochemical, physical, and chemical properties which are tunable for various applications. Furthermore, doped ta-C (ta-C:X) can be deposited on many different substrate materials (metals, ceramics, plastics) and geometries (micro-electrodes to ultra large areas at continuous coating lines). In this work, we present a comparison in electrochemical performance of ta-C electrodes prepared by filtered laser-arc (a physical vapor deposition process), doped with nitrogen (ta-C:N) at various levels, doped by boron (ta-C:B), and doped by boron and nitrogen together (ta-C:B:N). The ta-C:N films were doped via N2 gas in the deposition chamber, while ta-C:B and ta-C:B:N were deposited via incorporation of the dopant into the graphite cathode used for film synthesis. Films coated on silicon (Si) and titanium (Ti) substrates were compared through cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The Fe(CN)63-/4− and Ru(NH3)63+/2+redox systems were used to investigate the electrochemical characteristics of each ta-C:X film type. Boron-doped diamond (BDD), glassy carbon (GC), and undoped ta-C were used as control electrodes. It was found that all ta-C:X films exhibited appropriate rates of electron transfer, wide working potential window (ca. 3.7 V in KCl), and low capacitance. Specifically, the boronated films produced high heterogenous rate constant (k), the lowest double layer capacitance (Cdl), and a consequentially smaller RC time constant than BDD and GC. Incorporating boron into undoped and nitrogenated ta-C films stabilizes the formation of sp3 bonded content during deposition leading to films with a smoother surface and increased hardness. It is shown that the B-incorporated films exhibit no compromise in their electrochemical performance despite the increase in sp3 content. Due to its versatile nature, ta-C stands out as a material with a wide range of tunable properties for various applications.

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来源期刊
Electrochimica Acta
Electrochimica Acta 工程技术-电化学
CiteScore
11.30
自引率
6.10%
发文量
1634
审稿时长
41 days
期刊介绍: Electrochimica Acta is an international journal. It is intended for the publication of both original work and reviews in the field of electrochemistry. Electrochemistry should be interpreted to mean any of the research fields covered by the Divisions of the International Society of Electrochemistry listed below, as well as emerging scientific domains covered by ISE New Topics Committee.
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